Endpoint detection methods in plasma etch processes and apparatus therefor

• US 5,966,586 A
• Filed: 09/26/1997
• Issued: 10/12/1999
• Est. Priority Date: 09/26/1997
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Hao, Fangli
• Primary Examiner(s): Utech, Benjamin
• Assistant Examiner(s): PEREZ RAMOS, VANESSA
• Application Number:
  US08/938,082
• Time in Patent Office: 746 Days
• Field of Search: 438/7, 438/9, 438/14, 438/18, 438/710, 438/714
• US Class Current: 438/7
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01J 37/32963 End-point detection

Abstract

Methods for determining an endpoint for a plasma etching process. The plasma etching process is employed to etch a substrate in a plasma processing chamber. The method includes detecting, using a mass analyzer, a density of a predefined compound in the plasma processing chamber. The method further includes outputting from the mass analyzer a variable signal responsive to the detecting. There is also included producing, responsive to the variable signal, a control signal. The control signal is outputted when a predefined density criteria is detected in the variable signal. Additionally, there is included initiating an etch termination procedure, responsive to the control signal, thereby ending the plasma etching process at an end of the etch termination procedure.

Claims

1. A method for determining an endpoint for a plasma etching process, said plasma etching process being employed to etch a substrate in a plasma processing chamber, the method comprising:

detecting, using a mass analyzer, a density of a predefined compound in said plasma processing chamber;

outputting from said mass analyzer a variable signal responsive to said detecting;

producing, responsive to said variable signal, a control signal, said control signal being outputted when a predefined density criteria is detected in said variable signal; and

initiating an etch termination procedure, responsive to said control signal, thereby ending said plasma etching process at an end of said etch termination procedure.

2. A method according to claim 1 wherein said plasma processing chamber includes an exhaust port for exhausting byproducts of said plasma etching process and wherein said detecting comprises ascertaining said predefined density criteria in said byproducts as said byproducts are exhausted through said exhaust port.

3. A method according to claim 1 wherein said predefined density criteria is determined by performing a plurality of test etches on test substrates.

4. A method according to claim 1 wherein said substrate is a silicon wafer.

5. A method according to claim 1 wherein said substrate is a glass panel.

6. A method according to claim 1 wherein said predefined density criteria is a density threshold.

7. A method for determining an endpoint for a plasma etching process, said plasma etching process being employed to etch a substrate in a plasma processing chamber, the method comprising:

directing a beam of light through a region of said plasma processing chamber during said plasma etching process, said region containing byproducts of said plasma etching process, compounds of said byproducts having different light absorbing characteristics;

detecting an intensity of said beam of light after said beam of light passes through said region;

generating from said detecting a variable signal representative of a density of a predefined compound of said compounds in said byproducts;

producing, responsive to said variable signal, a control signal, said control signal being outputted when a predefined density criteria is detected in said variable signal; and

initiating an etch termination procedure, responsive to said control signal, thereby ending said plasma etching process at an end of said etch termination procedure.

8. A method according to claim 7 wherein said plasma processing chamber includes an exhaust port for exhausting said byproducts of said plasma etching process and wherein said directing said beam of light comprises directing said beam of light through a portion of said exhaust port.

9. A method according to claim 7 wherein said beam of light represents a laser beam having a wavelength selected to permit at least partial absorption of said laser beam by a presence of said predefined compound in said byproducts.

10. A method according to claim 7 wherein said predefined density criteria is ascertained by performing a plurality of test etches on test substrates.

11. A method according to claim 7 wherein said substrate is a silicon wafer.

12. A method according to claim 7 wherein said substrate is a glass panel.

13. A method according to claim 7 wherein said predefined density criteria is a density threshold.

14. A method for determining an endpoint for a plasma etching process, said plasma etching process being employed to etch a substrate in a plasma processing chamber, comprising:

employing a first endpoint sensor to determine a first endpoint of said plasma etching process;

employing a second endpoint sensor different from said first endpoint sensor to determine a second endpoint of said plasma etching process;

ascertaining whether said first endpoint and said second endpoint are ascertained within a predefined time period; and

initiating an etch termination procedure if said first endpoint and said second endpoint are ascertained within said predefined time period.

15. The method of claim 14 wherein said first endpoint sensor employs a different sensing technology than said second endpoint sensor.

16. The method of claim 14 wherein one of said first endpoint sensor and said second endpoint sensor employs a mass analyzer.