Temperature measuring device

• US 5,969,639 A
• Filed: 07/28/1997
• Issued: 10/19/1999
• Est. Priority Date: 07/28/1997
• Status: Expired due to Term

• Current Assignee: UT-Battelle LLC
• Original Assignee: Lockheed Martin Energy Research Corporation (Martin Marietta Corporation)
• Inventors: Lauf, Robert J., Bible, Don W., Sohns, Carl W.
• Primary Examiner(s): Horabik, Michael
• Assistant Examiner(s): WONG, ALBERT KANG
• Application Number:
  US08/901,708
• Time in Patent Office: 813 Days
• Field of Search: 340/870.17, 340/870.16, 340/870, 374/120, 374/121, 374/163, 342/368
• US Class Current: 340/870.17
• CPC Class Codes: H01Q 3/26 varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture H01Q3/12, H01Q3/22, H01Q3/24 take precedence

Abstract

Systems and methods are described for a wireless instrumented silicon wafer that can measure temperatures at various points and transmit those temperature readings to an external receiver. The device has particular utility in the processing of semiconductor wafers, where it can be used to map thermal uniformity on hot plates, cold plates, spin bowl chucks, etc. without the inconvenience of wires or the inevitable thermal perturbations attendant with them.

Claims

1. A temperature measurement device, comprising:

a silicon semiconductor wafer;

a solid-state temperature sensor mounted on said silicon semiconductor wafer; and

a signal transmitter adapted to transmit an output signal of said solid-state temperature sensor to an external receiver from approximately -65°

C., to approximately 200°

C., said signal transmitter and said solid-state temperature sensor composing a set of integrated circuits disposed directly upon said silicon semiconductor wafer.

2. The device of claim 1, further comprising a plurality of temperature sensors disposed at a plurality of selected locations on said silicon semiconductor wafer such that temperatures at said plurality of selected locations on said silicon semiconductor wafer can be measured.

3. The device of claim 1, further comprising a power source located on said silicon semiconductor wafer.

6. The device of claim 1, wherein said temperature sensor includes a temperature detecting element and a signal conditioning circuit.

7. The device of claim 6, wherein said temperature detecting element includes a device selected from the group consisting of a thermocouple, a resistive temperature detector, a thermistor, and a diode.

8. The device of claim 1, wherein said signal transmitter includes an RF transmitter and an antenna, said RF transmitter and said antenna being colocated upon said silicon semiconductor wafer.

9. The device of claim 2, further comprising a switch for individually activating said plurality of temperature sensors in a sequential order.

10. The device of claim 1, further comprising a clock and a memory whereby temperature data can be captured at selected times and stored for later retrieval.

11. The device of claim 1, further comprising an RF receiver whereby instructions can be received from an external transmitter and the operations of said device can be controlled thereby.

24. The device of claim 2, wherein said plurality of temperature sensors are a plurality of resistance temperature detectors, and, further comprising a common current loop electrically connected to said plurality of resistance temperature detectors.

25. The device of claim 2, wherein said plurality of temperature sensors are energized by a common voltage source.

26. The device of claim 1, wherein said signal transmitter includes an infrared emitting diode, and, further comprising a voltage controlled oscillator electrically connected between said temperature sensor and said infrared emitting diode.

28. The device of claim 2, wherein said signal transmitter includes an infrared emitting diode and said output signal includes a time domain signal.

31. The device of claim 1, further comprising a mandrel, said silicon semiconductor wafer being mounted on said mandrel;

a bushing connected to said mandrel; and

a set of brushes in contact with said bushing.

4. The device of claime 3, wherein said power source includes a thin film device selected from the group consisting of a battery, a capacitor, an inductive pick-up, and a photovoltaic device.

5. The device of claim 4, wherein said power source is fabricated directly upon said silicon semiconductor wafer as part of said set of integrated circuits.

12. A system for measuring temperatures at various locations and times in a silicon semiconductor wafer processing environment, comprising:

a temperature measuring device comprising;

a silicon semiconductor wafer;

a solid-state temperature sensor mounted on said silicon semiconductor wafer;

a signal transmitter adapted to transmit an output signal of said temperature sensor to an external receiver from approximately -65°

C. to approximately 200°

C., said signal transmitter and said temperature sensor composing a set of integrated circuits disposed directly upon said silicon semiconductor wafer;

an external receiver located outside said silicon semiconductor wafer processing environment, said external receiver adapted to receive said output signal from said signal transmitter; and

an external data processing device coupled to said external receiver, said external data processing device adapted to convert said output signal into useful information for a function selected from the group consisting of display, storage, and retrieval.

13. The system of claim 12, wherein said temperature measuring device further includes a plurality of temperature sensors disposed at a plurality of locations about said silicon semiconductor wafer such that temperatures at said plurality of locations can be measured thereby.

14. The system of claim 12, wherein said temperature measuring device includes a power source, said power source being located upon said silicon semiconductor wafer.

15. The system of claim 14, wherein said power source includes a thin film device selected from the group consisting of a battery, a capacitor, an inductive pick-up and a photovoltaic device.

16. The system of claim 14, wherein said power source is fabricated directly upon said silicon semiconductor wafer as a part of said set of integrated circuits.

17. The system of claim 12, wherein said temperature sensor includes a temperature detecting element and a signal conditioning circuit.

18. The system of claim 17, wherein said temperature detecting element is a device selected from the group consisting of a thermocouple, a resistive temperature detector, a thermistor, and a diode.

19. The system of claim 12, wherein said signal transmitter includes an RF transmitter and an antenna, said transmitter and said antenna being colocated upon said silicon semiconductor wafer.

20. The system of claim 13, further comprising a switch for individually activating said plurality of temperature sensors in a desired sequential order.

21. The system of claim 12, further comprising a signal conditioning circuit electrically connected to said solid-state temperature sensor and said signal transmitter, said signal conditioning circuit including a clock and a memory whereby temperature data can be captured at selected times and stored for later retrieval.

22. The system of claim 12, further comprising an RF receiver located on said silicon semiconductor wafer whereby instructions can be received from an external transmitter and the operations of said temperature measuring device can be controlled thereby.

23. The system of claim 12, wherein said temperature measuring device includes at least two temperature sensing devices, a signal conditioner circuit, a power supply, an RF transmitter, and an antenna, all of which are fabricated as a monolithic integrated circuit upon said silicon semiconductor wafer.

27. The system of claim 13, wherein said signal transmitter includes a plurality of infrared emitting diodes and said external receiver includes a movable infrared sensor.

32. The system of claim 12, further comprising a mandrel, said silicon semiconductor wafer being mounted on said mandrel;

a bushing connected to said mandrel; and

a set of brushes in contact with said bushing.

29. A method, comprising:

sensing a temperature on a silicon semiconductor wafer with a solid-state temperature sensor that is mounted on said silicon semiconductor wafer; and

transmitting an output signal of said solid-state temperature sensor from approximately -65°

C. to approximately 200°

C., to an external receiver from a signal transmitter, said signal transmitter and said solid-state temperature sensor composing a set of integrated circuits disposed directly upon said silicon semiconductor wafer.

30. The method of claim 29, further comprising sensing a plurality of temperatures with a plurality of temperature sensors that are energized by a common voltage source and performing a differential measurement by comparing the output of two of the plurality of temperature sensors and transmitting a differential signal.