Gallium nitride compound semiconductor light emitting element and method for fabricating the same
First Claim
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1. A gallium nitride compound semiconductor light emitting element, comprising:
- a substrate;
a first semiconductor multilayer structure formed on the substrate, comprising, at least, an active layer, a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, the first and second cladding layers sandwiching the active layer therebetween, and an inner current blocking layer;
an InN layer of the second conductivity type formed between the second cladding layer of the second conductivity type and the inner current blocking layer; and
a second semiconductor multilayer structure formed on the InN layer.
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Abstract
The gallium nitride compound semiconductor light emitting element includes: a substrate; a first semiconductor multilayer structure including, at least, an active layer, a first cladding layer of a first conductivity type, and a second cladding layer of a second conductivity type, the first and second cladding layers sandwiching the active layer therebetween; a dry etching stop layer of the second conductivity type formed on the first semiconductor multilayer structure; and a second semiconductor multilayer structure formed on the dry etching stop layer.
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Citations
21 Claims
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1. A gallium nitride compound semiconductor light emitting element, comprising:
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a substrate; a first semiconductor multilayer structure formed on the substrate, comprising, at least, an active layer, a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, the first and second cladding layers sandwiching the active layer therebetween, and an inner current blocking layer; an InN layer of the second conductivity type formed between the second cladding layer of the second conductivity type and the inner current blocking layer; and a second semiconductor multilayer structure formed on the InN layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for fabricating a gallium nitride compound semiconductor light emitting element, comprising the steps of:
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forming, at least, an active layer, a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and an inner current blocking layer on a substrate, the first and second cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, and an inner current blocking layer on a substrate, the first and second cladding layers sandwiching the active layer therebetween; and forming an InN layer of the second conductivity type between the second cladding layer and the inner current blocking layer. - View Dependent Claims (10, 11, 12, 13)
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14. A gallium nitride compound semiconductor light emitting element, comprising:
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a substrate; and a semiconductor multilayer structure formed on the substrate, comprising, at least, an active layer, a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, the first and second cladding layers sandwiching the active layer therebetween, an InN layer of the second conductivity layer, a third cladding layer of the second conductivity type, and a contact layer, wherein the InN layer of the second conductivity type is formed between the second cladding layer of the second conductivity type and the third cladding layer of the second conductivity type. - View Dependent Claims (15, 16)
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17. A method for fabricating a gallium nitride compound semiconductor light emitting element, comprising:
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forming, at least, an active layer, a first cladding layer of a first conductivity type, a second cladding layer of a second conductivity type, a third cladding layer of the second conductivity type, and a contact layer of the second conductivity type on a substrate, the first and second cladding layers sandwiching the active layer therebetween; forming a InN layer of the second conductivity type between the second cladding layer and the third cladding layer. - View Dependent Claims (18, 19, 20, 21)
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Specification