Heating device for semiconductor wafers

• US 5,970,214 A
• Filed: 05/14/1998
• Issued: 10/19/1999
• Est. Priority Date: 05/14/1998
• Status: Expired due to Term

• Current Assignee: Mattson Technology, Inc. (Beijing Economic & Technology Development Area)
• Original Assignee: AG Associates Incorporated (KSBG Kommunale Beteiligungsgesellschaft GmbH & Company KG)
• Inventors: Gat, Arnon
• Primary Examiner(s): PELHAM, JOSEPH MOORE
• Application Number:
  US09/078,856
• Time in Patent Office: 523 Days
• Field of Search: 219/390, 219/405, 219/411, 219/494, 392/411, 392/416, 392/422, 392/423, 392/424, 118/50.1, 118/724, 118/725, 118/730, 250/492.22, 250/495.1, 438/799
• US Class Current: 392/416
• CPC Class Codes: C30B 25/105 by irradiation or electric discharge
• CPC Class Codes: C30B 31/12 Heating of the reaction chamber
• CPC Class Codes: H01L 21/67115 mainly by radiation

Abstract

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. In particular, the light energy sources are positioned such that many different radial heating zones are created on a wafer being heated. The light energy sources form concentric rings. Tuning light sources are then placed in between the concentric rings of light.

Claims

1. An apparatus for heat treating semiconductor wafers comprising:

a thermal processing chamber adapted to contain a semiconductor wafer; and

a heating device in communication with said thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising concentric rings of light energy sources for heating different radial locations on said semiconductor wafer, at least certain of said concentric rings of said light energy sources being separated by at least one tuning source, said at least one tuning source being configured to only emit a lesser amount of light energy than any adjacent concentric ring of light energy sources, said at least one tuning source supplying predetermined amounts of light energy in between said concentric rings for more uniformly heating said semiconductor wafer.

2. An apparatus as defined in claim 1, wherein said light energy sources are substantially vertically oriented with respect to said semiconductor wafer.

3. An apparatus as defined in claim 1, further comprising:

at least one temperature sensing device for sensing the temperature of said semiconductor wafer at least at one location; and

a controller in communication with said at least one temperature sensing device, at least certain of said light energy sources, and said tuning sources, said controller being configured to control the amount of light energy being emitted by said light energy sources and said tuning sources in response to temperature information received from said at least one temperature sensing device.

4. An apparatus as defined in claim 3, wherein said controller is configured to control the amount of light energy being emitted by each concentric ring of light energy sources independent of the other concentric rings.

5. An apparatus as defined in claim 4, wherein said controller is configured to control the amount of light energy being emitted by said tuning sources independent of said concentric rings.

6. An apparatus as defined in claim 1, wherein said heating device comprises at least four concentric rings of light energy sources.

7. An apparatus as defined in claim 1, further comprising a substrate holder for holding said semiconductor wafer, said substrate holder being configured to rotate said wafer.

8. An apparatus as defined in claim 1, wherein said heating device is configured to rotate.

9. An apparatus as defined in claim 1, further comprising arc-shaped reflector plates position in between said concentric rings of light energy sources.

10. An apparatus as defined in claim 9, wherein said arc-shaped reflective plates extend in between certain of said tuning sources along a common radii.

11. An apparatus for heat treating semiconductor wafers comprising:

a thermal processing chamber;

a substrate holder contained in said thermal processing chamber for holding a semiconductor wafer, said substrate holder being configured to rotate said wafer;

a heating device in communication with said thermal processing chamber for heating a semiconductor wafer held on said substrate holder, said heating device comprising concentric rings of light energy sources for heating different radial locations on said semiconductor wafer, at least certain of said concentric rings of light energy sources being separated by at least one tuning source said at least one tuning source being configured to only emit a lesser amount of light energy than any adjacent concentric ring of light energy sources, said at least one tuning source supplying predetermined amounts of light energy in between said concentric rings for more uniformly heating said semiconductor wafer;

arc-shaped reflector plates located in between said concentric rings for directing light energy onto said semiconductor wafer;

at least one temperature sensing device for sensing the temperature of said wafer at least at one location; and

a controller in communication with said at least one temperature sensing device, said light energy sources, and said tuning sources, said controller being configured to control the amount of light energy being emitted by said light energy sources and said tuning sources in response to temperature information received from said at least one temperature sensing device.

12. An apparatus as defined in claim 11, wherein said arc-shaped reflective plates extend in between certain of said tuning sources along a common radii.

13. An apparatus as defined in claim 11, wherein said reflector plates have a length that extends beyond said light energy sources.

14. An apparatus as defined in claim 11, wherein said light energy sources are substantially vertically oriented with respect to said semiconductor wafer.

15. An apparatus as defined in claim 11, wherein said at least one temperature sensing device comprises a plurality of pyrometers.

16. An apparatus as defined in claim 11, wherein said at least one temperature sensing device comprises a thermocouple.

17. An apparatus as defined in claim 11, wherein said heating device contains at least four concentric rings.

18. An apparatus for heat treating semiconductor wafers comprising:

a thermal processing chamber adapted to contain a semiconductor wafer; and

a heating device in communication with said thermal processing chamber for heating a semiconductor wafer contained in said chamber, said heating device comprising concentric rings of light energy sources for heating different radial locations on said semiconductor wafer, at least certain of said concentric rings of said light energy sources being separated by at least one tuning source, wherein the number of tuning sources located between adjacent concentric rings is less than the number of light energy sources that comprise either of said adjacent rings, said tuning sources supplying predetermined amounts of light energy in between said concentric rings for more uniformly heating said semiconductor wafer.

19. An apparatus as defined in claim 18, wherein said light energy sources are substantially vertically oriented with respect to said semiconductor wafer.

20. An apparatus as defined in claim 18, further comprising:

at least one temperature sensing device for sensing the temperature of said semiconductor wafer at least at one location; and

a controller in communication with said at least one temperature sensing device, at least certain of said light energy sources, and said tuning sources, said controller being configured to control the amount of light energy being emitted by said light energy sources and said tuning sources in response to temperature information received from said at least one temperature sensing device.

21. An apparatus as defined in claim 20, wherein said controller is configured to control the amount of light energy being emitted by each concentric ring of light energy sources independent of the other concentric rings.

22. An apparatus as defined in claim 20, wherein said controller is configured to control the amount of light energy being emitted by said tuning sources independent of said concentric rings.

23. An apparatus as defined in claim 18, wherein said heating device comprises at least four concentric rings of light energy sources.

24. An apparatus as defined in claim 18, further comprising a substrate holder for holding said semiconductor wafer, said substrate holder being configured to rotate said wafer.

25. An apparatus as defined in claim 18, further comprising arc-shaped reflector plates position in between said concentric rings of light energy sources.

26. An apparatus as defined in claim 25, wherein said arc-shaped reflective plates extend in between certain of said tuning sources along a common radii.