Silicon IC contacts using composite TiN barrier layer
First Claim
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1. Process for the manufacture of silicon integrated circuits wherein at least one aluminum alloy contact is made to a silicon surface, the process comprising the steps of:
- a. depositing a layer of titanium on said silicon surface,b. depositing a first layer of TiN by chemical vapor deposition on the layer of titanium,c. depositing a second layer of TiN on first layer of TiN said second layer of TiN deposited by sputtering, andd. depositing a layer comprising aluminum on said second layer of TiN.
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Abstract
The specification describes a composite TiN barrier layer structure formed by depositing a first TiN layer by CVD to obtain good step coverage, followed by a second TiN layer formed by PVD to obtain uniform surface morphology for subsequent deposition of an aluminum alloy contact layer. Alternatively, uniform TiN layer morphology is obtained by depositing multiple CVD TiN layers as a series of thin strata, and passivating after each deposition step to fully crystallize each stratum thereby obtaining a uniformly crystallized barrier layer.
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Citations
11 Claims
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1. Process for the manufacture of silicon integrated circuits wherein at least one aluminum alloy contact is made to a silicon surface, the process comprising the steps of:
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a. depositing a layer of titanium on said silicon surface, b. depositing a first layer of TiN by chemical vapor deposition on the layer of titanium, c. depositing a second layer of TiN on first layer of TiN said second layer of TiN deposited by sputtering, and d. depositing a layer comprising aluminum on said second layer of TiN. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification