Method of manufacturing a planar coil using a transparency substrate

• US 5,972,193 A
• Filed: 10/10/1997
• Issued: 10/26/1999
• Est. Priority Date: 10/10/1997
• Status: Expired due to Term

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Lin, Yuh-Sheng, Huang, Star Rey-Shing, Chou, Min-Chieh, Wu, Ching-Yi
• Primary Examiner(s): Gorgos, Kathryn
• Assistant Examiner(s): SMITH HICKS, ERICA D
• Application Number:
  US08/949,001
• Time in Patent Office: 746 Days
• Field of Search: 205/122, 205/123, 205/125, 205/129, 205/157
• US Class Current: 205/122
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: H02K 3/26 consisting of printed conductors

Abstract

The present invention uses a glass to act as a substrate. A stencil layer is patterned on the top surface of the substrate. Successively, a copper layer is deposited over the substrate. Next step is to remove the stencil layer. A negative photoresist layer is formed on the copper layer. A negative photoresist layer is processed using a backside exposure of the resist through the transparent substrate. The backside exposure technique uses the self-aligning, conductive copper layer as a mask. A plurality of trenches are then created in the photoresist layer and a second copper layer is electroplated in the trenches to form the planar coils.

Claims

1. A method for manufacturing a planar coil on a transparency substrate for a micromachine, said transparency substrate having a first surface and a second surface, said method comprising the steps of:

forming a stencil layer on said first surface of said transparency substrate;

patterning said stencil layer using lithography;

forming a first conductive layer on said stencil layer and on said first surface of said transparency substrate to serve as said planar coils;

removing said first stencil layer, portions of said first conductive layer remaining on said first surface of said transparency substrate;

forming a photosensitive layer on said first conductive layer and on said first surface of said transparency substrate;

exposing said photosensitive layer from said second surface of said transparency substrate;

developing said photosensitive layer, said exposed portions of said photosensitive layer remaining on said first surface of said transparency substrate, thereby forming trenches between said exposed portions of said photosensitive layer, said first conductive layer being in said trenches; and

forming a second conductive layer in said trenches and on said first conductive layer to serve as said planar coils.

2. The method of claim 1, further comprises forming a barrier layer on said first surface of said transparency substrate before forming said first conductive layer.

3. The method of claim 1, wherein said transparency substrate is selected from the group consisting of quartz, glass, almino silicate and boro-silicate.

4. The method of claim 1, wherein said stencil layer is selected from the group consisting of photoresist, aluminum, silicon dioxide and polyimide.

5. The method of claim 4, wherein said stencil layer has a thickness greater than 5000 angstroms.

6. The method of claim 1, wherein said first conductive layer is selected from the group consisting of copper, silver, nickel and gold.

7. The method of claim 6, wherein said first conductive layer has a thickness thinner than the thickness of said stencil layer.

8. The method of claim 7, wherein said first conductive layer is formed by using physical vapor deposition.

9. The method of claim 1, wherein said photosensitive layer is selected from the group consisting of negative photoresist and photosensitive polyimide.

10. The method of claim 9, wherein said photosensitive layer has a thickness greater than 10000 angstroms.

11. The method of claim 2, wherein said barrier layer is selected from the group consisting of titanium, nickel and chromium.

12. The method of claim 11, wherein said barrier layer has a thickness thinner than 1000 angstroms.

13. The method of claim 11, wherein said barrier layer is formed by physical vapor deposition.

14. The method of claim 1, wherein said second conductive layer is selected from the group consisting of copper, silver, gold and nickel.

15. The method of claim 14, wherein said second conductive layer is formed by electroplating.