Digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer
First Claim
1. A digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer comprising:
- (i) providing a chemical vapor deposition (CVD) reactor chamber;
(ii) positioning within the chemical vapor deposition (CVD) reactor chamber a substrate;
(iii) forming over the substrate a multi-component oxide precursor layer, the multi-component oxide precursor layer being formed from a multiplicity of precursor reactant source materials comprising at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material; and
(iv) oxidizing with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form the multi-component oxide layer over the substrate, the oxidant reactant source material being introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material.
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Accused Products
Abstract
A chemical vapor deposition (CVD) method for forming a multi-component oxide layer. There is first provided a chemical vapor deposition (CVD) reactor chamber. There is then positioned within the chemical vapor deposition (CVD) reactor chamber a substrate. There is then formed over the substrate a multi-component oxide precursor layer. The multi-component oxide precursor layer is formed from at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material. There is then oxidized with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form a multi-component oxide layer formed over the substrate. The oxidant reactant source material is introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material.
399 Citations
24 Claims
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1. A digital chemical vapor deposition (CVD) method for forming a multi-component oxide layer comprising:
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(i) providing a chemical vapor deposition (CVD) reactor chamber; (ii) positioning within the chemical vapor deposition (CVD) reactor chamber a substrate; (iii) forming over the substrate a multi-component oxide precursor layer, the multi-component oxide precursor layer being formed from a multiplicity of precursor reactant source materials comprising at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material; and (iv) oxidizing with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form the multi-component oxide layer over the substrate, the oxidant reactant source material being introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A digital chemical vapor deposition (CVD) method for forming a thickness of a multi-component oxide layer over a substrate comprising:
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(i) providing a chemical vapor deposition (CVD) reactor chamber; (ii) positioning within the chemical vapor deposition (CVD) reactor chamber a substrate; (iii) forming over the substrate a multi-component oxide precursor layer, the multi-component oxide precursor layer being formed from a multiplicity of precursor reactant source materials comprising at minimum a first precursor reactant source material and a second precursor reactant source material introduced simultaneously into the chemical vapor deposition (CVD) reactor chamber in absence of an oxidant reactant source material; and (iv) oxidizing with the oxidant reactant source material within the chemical vapor deposition (CVD) reactor chamber the multi-component oxide precursor layer formed over the substrate to form the multi-component oxide layer over the substrate, the oxidant reactant source material being introduced into the chemical vapor deposition (CVD) reactor chamber in absence of the first precursor reactant source material and the second precursor reactant source material, wherein; step (iii) and step (iv) are carried out sequentially and repetitively for a sufficient number of repetitive cycles to yield the multi-component oxide layer over the substrate at the thickness. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification