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Method of manufacturing a tab semiconductor device

  • US 5,972,739 A
  • Filed: 03/13/1998
  • Issued: 10/26/1999
  • Est. Priority Date: 04/28/1995
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a TAB semiconductor device comprising a semiconductor element portion, a film carrier portion, and an encapsulating resin, comprising the steps of:

  • performing a surface treatment of a surface of a semiconductor chip using a 0.5%- to 5%-solution of a silane coupling agent, said semiconductor chip comprising a semiconductor element having metal bumps thereon and metal leads electrically connected to said metal bumps, wherein said surface treatment comprises directly contacting at least one entire surface of said semiconductor element with said solution of said silane coupling agent;

    stacking a resin film having an area larger than said chip on front and rear surfaces of said semiconductor chip which has been subjected to said surface treatment;

    temporarily contact-bonding said stacked resin film to said semiconductor chip by heating said resin film in an atmosphere at a temperature not lower than a glass transition temperature of said resin film; and

    thermally setting said stacked resin film by further heating said resin film.

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