Method of manufacturing a tab semiconductor device

• US 5,972,739 A
• Filed: 03/13/1998
• Issued: 10/26/1999
• Est. Priority Date: 04/28/1995
• Status: Expired due to Fees

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Matsui, Koji, Funada, Yoshitsugu
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): JONES, JOSETTA I
• Application Number:
  US09/041,592
• Time in Patent Office: 592 Days
• Field of Search: 438/127, 438/106
• US Class Current: 438/127
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 23/293 Organic, e.g. plastic
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3164 the coating being a foil
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/01322 Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 Solder alloys
• CPC Class Codes: H01L 2924/12042 LASER

Abstract

A resin-encapsulated semiconductor device includes a semiconductor chip consisting of a semiconductor element having metal bumps and metal leads electrically connected to the metal bumps and having a surface-treated layer obtained by a surface treatment, and a resin film stacked on the outer side of the semiconductor chip and tightly adhered to the semiconductor chip by a heat treatment and pressurization treatment.

Claims

1. A method of manufacturing a TAB semiconductor device comprising a semiconductor element portion, a film carrier portion, and an encapsulating resin, comprising the steps of:

performing a surface treatment of a surface of a semiconductor chip using a 0.5%- to 5%-solution of a silane coupling agent, said semiconductor chip comprising a semiconductor element having metal bumps thereon and metal leads electrically connected to said metal bumps, wherein said surface treatment comprises directly contacting at least one entire surface of said semiconductor element with said solution of said silane coupling agent;

stacking a resin film having an area larger than said chip on front and rear surfaces of said semiconductor chip which has been subjected to said surface treatment;

temporarily contact-bonding said stacked resin film to said semiconductor chip by heating said resin film in an atmosphere at a temperature not lower than a glass transition temperature of said resin film; and

thermally setting said stacked resin film by further heating said resin film.

2. A method according to claim 1 wherein said silane coupling agent is a material selected from the group consisting of γ

-glycidoxypropyltrimethoxysilane and γ

-aminopropyltrimethoxysilane.

10. A method according to claim 1, wherein said semiconductor element has a front surface having a front surface area treated by said coupling agent in said surface treatment and a rear surface having a rear surface area treated by said coupling agent in said surface treatment, and said resin film has a resin film surface area larger than said front surface area or said rear surface area to which said resin film is adhered.

11. A method according to claim 10, wherein said surface treatment comprises the steps of immersing said semiconductor chip in said solution of said silane coupling agent, volatizing said solution, and heating said silane-coated semiconductor element.

12. A method according to claim 1, wherein said resin film has a thickness of about 30 to 150 μ

m, and said metal bumps have a height of about 10 to 200 μ

m and a diameter of about 10 to 500 μ

m.

13. A method according to claim 1, wherein said resin film comprises a B-stage sheet of a thermosetting resin.

14. A method according to claim 1, wherein said resin film contains at least one material selected from the group consisting of particles, fibers, and nonwoven fabric.

15. A method according to claim 1, wherein said resin film comprises a B-stage thermosetting resin selected from the group consisting of an epoxy resin, a BT resin, a dially phthalate resin, and a derivative thereof.

3. A method of manufacturing a TAB semiconductor device, comprising the steps of:

performing a surface treatment of a semiconductor element comprising directly contacting at least one entire surface of said semiconductor element with a silane coupling agent using a solution containing 0.5% to 5% of said silane coupling agent, wherein said semiconductor element has metal bumps thereon and metal leads electrically connected to said metal bumps;

temporarily contact-bonding a printed board having a board electrode portion at a semiconductor element mounting portion and a resin film having holes at portions where electrical connection is required by heating said resin film to a temperature not lower than a glass transition temperature of said resin film;

inserting said metal bumps on said surface-treated semiconductor element in the holes of said printed board while positioning said metal bumps in a face down orientation; and

electrically connecting said semiconductor element to said board electrode of said printed board by heating and reflowing said metal bumps.

16. A method according to claim 3, wherein said silane coupling agent is selected from the group consisting of γ

-glycidoxypropyltrimethoxysilane and γ

-aminopropyltrimethoxy-silane.

4. A method of manufacturing a TAB semiconductor device, comprising the steps of:

performing a surface treatment of a surface of a semiconductor chip using a 0.5%- to 5%-solution of a silane coupling agent, said semiconductor chip comprising a semiconductor element having metal bumps thereon and metal leads electrically connected to said metal bumps, wherein said surface treatment comprises directly contacting at least one entire surface of said semiconductor element with said solution of said said silane coupling agent;

temporarily contact-bonding a printed board having a board electrode portion at a semiconductor chip mounting portion and a resin film having holes at portions where electrical connection is required by heating said resin film to a temperature not lower than a glass transition temperature of said resin film;

inserting said metal bumps on said surface-treated semiconductor element in the holes of said printed board while positioning said metal bumps in a face down orientation;

electrically connecting said semiconductor element to said board electrode of said printed board by heating and reflowing said metal bumps;

stacking a resin film having an area larger than said element on a rear surface of said semiconductor element electrically connected to said printed board;

temporarily contact-bonding said stacked resin film to said semiconductor chip by heating said resin film in an atmosphere at a temperature not lower than the glass transition temperature of said resin film; and

thermally setting said stacked resin film by further heating said resin film.

5. A method according to claim 4, wherein the step of temporarily contact-bonding said stacked resin film to said semiconductor element is performed in a reduced atmosphere.

6. A method according to claim 4, wherein the step of thermally setting said stacked resin film is performed in a nitrogen atmosphere.

17. A method according to claim 4, wherein said resin film has a thickness of about 30 to 150 μ

m, and said metal bumps have a height of about 10 to 200 μ

m and a diameter of about 10 to 500 μ

m.

18. A method according to claim 4, wherein said silane coupling agent is selected from the group consisting of γ

-glycidoxypropyltrimethoxysilane and γ

-aminopropyltrimethoxy-silane.

7. A method of manufacturing a TAB semiconductor device, comprising the steps of:

performing a surface treatment of a surface of a semiconductor chip using a 0.5%- to 5%-solution of a silane coupling agent, said semiconductor chip comprising a semiconductor element having metal bumps thereon and metal leads electrically connected to said metal bumps, wherein said surface treatment comprises directly contacting at least one entire surface of said semiconductor element with said solution of said silane coupling agent;

temporarily contact-bonding a printed board having a board electrode portion at a semiconductor chip mounting portion and a resin film having holes at portions where electrical connection is required by heating said resin film to a temperature higher than a glass transition temperature of said resin film;

inserting said metal bumps on said surface-treated semiconductor element in the holes of said printed board while positioning said metal bumps in a face down orientation;

electrically connecting said board electrode to said printed board by heating and reflowing said metal bumps;

adhering a resin film to a side surface of said semiconductor element electrically connected to said printed board;

temporarily contact-bonding said stacked resin film to said semiconductor chip by heating said resin film in an atmosphere at a temperature not lower than a glass transition temperature of said resin film; and

thermally setting said stacked resin film by further heating said resin film.

8. A method according to claim 7, wherein the step of temporarily contact-bonding said stacked resin film to said semiconductor element is performed in a reduced atmosphere.

9. A method according to claim 7, wherein the step of thermally setting said stacked resin film is performed in a nitrogen atmosphere.

19. A method according to claim 7, wherein said resin film has a thickness of about 30 to 150 μ

m, and said metal bumps have a height of about 10 to 200 μ

m and a diameter of about 10 to 500 μ

m.

20. A method according to claim 7, wherein said silane coupling agent is selected from the group consisting of γ

-glycidoxypropyltrimethoxysilane and γ

-aminopropyltrimethoxy-silane.