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Method of manufacturing semiconductor device

  • US 5,972,741 A
  • Filed: 10/28/1997
  • Issued: 10/26/1999
  • Est. Priority Date: 10/31/1996
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device, comprising the steps of:

  • forming a channel layer of one conductivity type on a surface of a semiconductor substrate;

    forming a mask layer having a plural of openings on said semiconductor substrate;

    forming an insulating film on said mask layer to cover said openings of said mask layer;

    etching said insulating film to form side walls beside walls of said openings of said mask layer;

    etching said semiconductor substrate to form trenches extending through said channel layer of said semiconductor substrate using said side walls as a mask.

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