Semiconductor device having a copper wiring layer formed on a base via a barrier layer of amorphous tantalum carbide

• US 5,973,400 A
• Filed: 03/21/1997
• Issued: 10/26/1999
• Est. Priority Date: 09/24/1996
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Murakami, Masanori, Doi, Tsukasa, Oku, Takeo
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US08/822,126
• Time in Patent Office: 949 Days
• Field of Search: 257/751, 257/761, 257/762
• US Class Current: 257/751
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A semiconductor device including, a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbide.

Claims

1. A semiconductor device comprising a wiring layer whose main component is copper being formed on a base via a barrier layer of amorphous tantalum carbides,

wherein the amorphous tantalum carbide contains tantalum in 78 to 99 wt %, and the barrier layer has a thickness of 5 to 25 nm.

2. A semiconductor device according to claim 1, wherein the barrier layer also contains tantalum nitride.

3. A semiconductor device according to claim 1, wherein the wiring layer contains copper in 50 to 99 wt %.

4. A semiconductor device according to claim 1, wherein the wiring layer has a thickness of 0.1 to 10 μ

m.

5. A semiconductor device according to claim 1, wherein the base comprises a substrate and a first wiring layer.

6. A semiconductor device according to claim 5, wherein the first wiring layer is a source, drain or gate of a transistor or any one layer in multi-layered wiring layer.