Reliable sustained self-sputtering

• US 5,976,334 A
• Filed: 11/25/1997
• Issued: 11/02/1999
• Est. Priority Date: 11/25/1997
• Status: Expired due to Fees

• Current Assignee: Atlas Sound LP (MITEK CORPORATION)
• Original Assignee: Applied Materials Incorporated
• Inventors: Xu, Zheng, Fu, Jianming
• Primary Examiner(s): Gupta, Yogendra
• Assistant Examiner(s): Hamlin, Derrick G.
• Application Number:
  US08/978,433
• Time in Patent Office: 707 Days
• Field of Search: 204/298.19, 204/298.03, 204/298.02, 204/192.13, 204/298.13, 118/723 MA
• US Class Current: 204/298.19
• CPC Class Codes: C23C 14/32 by explosion; by evaporation and subsequent ionisation of the vapours , e.g. ion-platingC23C14/34 - C23C14/48 take precedence
• CPC Class Codes: C23C 14/3457 using other particles than noble gas ions C23C14/0036, C23C14/46 take precedence
• CPC Class Codes: C23C 14/54 Controlling or regulating the coating process
• CPC Class Codes: H01J 37/3405 Magnetron sputtering
• CPC Class Codes: H01J 37/3444 Associated circuits

Abstract

A plasma physical vapor deposition (PVD) reactor configured for self sustained sputtering in which no sputtering working gas is required but the sputtered ions are sufficient to sustain the sputtering from the target. According to the invention, the power applied to the sputtering target is monitored to determine if sustained self-sputtering is being maintained. If the electrical parameters or other parameters in the chamber indicate that the self-sustained plasma has collapsed, a reinitialization procedure is begun including: admitting a working gas such as argon into the chamber; again exciting the plasma; and then effectively eliminating the working gas.

Claims

1. A PVD plasma reactor system, comprising:

a chamber to which is mountable a target;

a valve controlling a supply of a working gas into said chamber;

a source of DC electrical power connectable to said target and capable of exciting said gas into a plasma;

a power monitor monitoring a supply of said DC electrical power to said target; and

a controller controlling said valve in response to a change in an output of said power monitor.

2. The system of claim 1, wherein said power monitor monitors a voltage associated with said target.

3. The system of claim 2, wherein said controller compares a change in said monitored voltage to a threshold value.

4. The system of claim 1, wherein said power monitor monitors a current delivered to said target.

5. The system of claim 4, wherein said controller compares a change in said monitored current to a threshold value.

6. The system of claim 4, wherein said controller compares said monitored current to a threshold value.

7. The system of claim 1, further comprising a magnetron positioned adjacent to said target and enabling said power supply to self-sustain a plasma with ions from said target.

8. The system of claim 7, wherein said target comprises copper.

9. A method of maintaining a plasma in a sputtering chamber, comprising the steps of:

placing a substrate to be fabricated into integrated circuits into a plasma sputtering chamber;

admitting a working gas into said sputtering chamber;

applying electrical power to a target in said sputtering chamber to cause said working gas to form a first plasma, to thereby sputter material of said target onto said substrate;

monitoring said electrical power delivered to said target; and

setting a threshold of said electrical power indicating a need to reignite said plasma.

10. The method of claim 9, further comprising, if said monitoring step indicates a change of said electrical power greater than said threshold, reigniting a second plasma in said chamber while said substrate remains in said chamber.

11. The method of claim 10, wherein said reigniting step includes increasing a flow of said working gas into said chamber.

12. The method of claim 9, wherein, after said applying step has ignited said first plasma, further comprising the step of substantially reducing a flow of said working gas into said chamber, wherein a material of said target causes sustained self-sputtering of said target.

13. The method of claim 11, wherein said target comprises copper.

14. The method of claim 10, wherein said reigniting step includes pulsing said working gas into said chamber.

15. A PVD plasma reactor system, comprising:

a chamber to which is mountable a target;

a valve controlling a supply of a working gas into said chamber;

a source of DC electrical power connectable to said target and capable of exciting said gas into a plasma;

a power monitor monitoring a supply of said DC electrical power to said target; and

means responsive to a change in an output of said power monitor for controlling said valve.

17. The system of claim 15, wherein said gas comprises argon.

19. The system of claim 17, wherein said gas comprises argon.

16. A PVD plasma reactor system, comprising:

a chamber to which is mountable a target;

a valve controlling a supply of a gas into said chamber;

a source of electrical power supply connectable to said target and capable of exciting said gas into a plasma;

a power monitor monitoring a supply of said electrical power to said target, wherein said power monitor monitors a voltage associated with said target; and

a controller controlling said valve in response to an output of said power monitor, wherein said controller compares a change in said monitored voltage to a threshold value.

18. A PVD plasma reactor system, comprising:

a chamber to which is mountable a target;

a valve controlling a supply of a gas into said chamber;

a source of electrical power supply connectable to said target and capable of exciting said gas into a plasma;

a power monitor monitoring a supply of said electrical power to said target, wherein said power monitor monitors a current delivered to said target; and

a controller controlling said valve in response to a change in an output of said power monitor.