Converting a hydrogen silsesquioxane film to an oxide using a first heat treatment and a second heat treatment with the second heat treatment using rapid thermal processing

• US 5,976,966 A
• Filed: 11/05/1997
• Issued: 11/02/1999
• Est. Priority Date: 11/05/1996
• Status: Expired due to Term

• Current Assignee: Yamaha Corporation
• Original Assignee: Yamaha Corporation
• Inventors: Inoue, Yushi
• Primary Examiner(s): Booth, Richard
• Assistant Examiner(s): Hack, Jonathan
• Application Number:
  US08/964,580
• Time in Patent Office: 727 Days
• Field of Search: 438/618, 438/637, 438/670
• US Class Current: 438/618
• CPC Class Codes: H01L 21/02134 the material comprising hydrogen silsesquioxane, e.g. HSQ
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/02337 treatment by exposure to a gas or vapour
• CPC Class Codes: H01L 21/3124 layers comprising hydrogen silsesquioxane
• CPC Class Codes: H01L 21/316 composed of oxides or glassy oxides or oxide based glass
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76828 thermal treatment

Abstract

An insulating film is formed by CVD on the surface of a semiconductor substrate formed with circuit elements such as transistors, and thereafter a hydrogen silsesquioxane resin film is formed on the insulating film by spin-coating or the like. This resin film is sequentially subjected to low temperature annealing at 400° C. or lower and then to high temperature annealing at 700° C. or higher. The low temperature annealing changes the resin film into a silicon oxide film, and the high temperature annealing is performed in order to make dense the film quality of the silicon oxide film. The high temperature annealing is performed by rapid thermal annealing in an oxidizing atmosphere of water vapor or the like. A CVD insulating film is formed on the densified silicon oxide film and planarized by CMP or the like, according to necessity. A contact hole is formed through the CVD insulating film, densified silicon oxide film and the insulating film, and a wiring layer is thereafter deposited.

Claims

1. A method of forming a wiring layer comprising the steps of:

(a) forming an insulating film on one main surface of a semiconductor substrate by vapor deposition, the semiconductor substrate having a region to be electrically connected to a wiring layer;

(b) coating a hydrogen silsesquioxane resin film on the insulating film so as to make the hydrogen silsesquioxane resin film have a flat surface;

(c) changing the hydrogen silsesquioxane resin film into a silicon oxide film by performing a first heat treatment at a first temperature;

(d) making the film quality of the silicon oxide film dense by performing a second heat treatment at a second temperature higher than the first temperature, the second heat treatment using rapid thermal annealing in an oxidizing atmosphere;

(e) forming a contact hole through an underlying layer of the wiring layer to reach the region of the semiconductor substrate, the underlying layer including at least the insulating film and the silicon oxide film subjected to the second heat treatment; and

(f) forming the wiring layer on the underlying layer, the wiring layer being electrically connected via the contact hole to the region of the semiconductor substrate.

2. A method according to claim 1, further comprising the steps of:

(g) forming a second insulating film by vapor deposition on the silicon oxide film subjected to the second heat treatment; and

(h) removing the surface of the second insulating film to leave a second insulating film having a flat surface,

wherein said step (e) is a step of forming the contact hole through the underlying layer including at least the first insulating film, the silicon oxide film subjected to the second heat treatment, and the second insulating film with the flat surface, to reach the region of the semiconductor substrate.

3. A method according to claim 1, wherein the first temperature in said step (c) is 400°

C. or lower.

4. A method according to claim 1, wherein the second temperature in said step (d) is 700°

C. or higher.

5. A method according to claim 1, wherein said step (d) is completed in one minute or shorter.

6. A method according to claim 1, wherein said step (d) is completed in 30 seconds or shorter.

7. A method according to claim 1, wherein said step (d) is performed by lamp heating.

8. A method according to claim 1, wherein said step (c) is performed in a resistance heating furnace.

9. A method according to claim 8, wherein said step (c) is performed for 30 minutes or longer.

10. A method according to claim 2, wherein said step (h) includes an etch-back process.

11. A method according to claim 2, wherein said step (h) includes a chemical mechanical polishing process.

12. A method of fabricating a wiring comprising the steps of:

(a) providing a substrate having conductive regions and an overlying structure thereon;

(b) forming a hydrogen silsesquioxane resin film over the substrate;

(c) subjecting said hydrogen silsesquioxane resin film to a first heat treatment in an inert gas atmosphere to convert said hydrogen silsesquioxane resin film into a silicon oxide film;

(d) subjecting said silicon oxide film to a second heat treatment by a rapid thermal annealing in an oxidizing gas atmosphere to densify the silicon oxide film;

(e) forming a connecting hole through the silicon oxide film; and

(f) forming a wiring layer in the connecting hole so as to make an electrical contact between the wiring layer and the conductive region.

13. A method according to claim 12, wherein the first heat treatment is performed at a temperature of 400°

C. or lower.

14. A method according to claim 12, wherein the second heat treatment is performed at a temperature of 700°

C. or higher.

15. A method according to claim 12, wherein the inert gas atmosphere is a nitrogen gas atmosphere.

16. A method according to claim 12 further comprising the steps of;

(a-1) after the step (a), forming a first interlayer insulating film over the substrate and the overlying structure; and

(d-1) after the step (d), forming a second interlayer insulating film over the densified silicon oxide film.

17. A method according to claim 16, where the connecting hole is provided through the first interlayer insulating film, the second interlayer insulating film and the densified silicon oxide film.

18. A method according to claim 16, wherein the second interlayer insulating film is made by using one of a method of forming a phosphosilicate glass film or a borophosphosilicate glass film by atmospheric pressure chemical vapor deposition (CVD).

19. A method of fabricating a wiring comprising the steps of:

(a) providing a substrate having a gate electrode, source and drain regions thereon;

(b) forming a first interlayer insulating film;

(c) forming a hydrogen silsesquioxane resin film over first interlayer insulating film and the first level wiring;

(d) subjecting said hydrogen silsesquioxane resin film to a first heat treatment in an inert gas atmosphere to convert said hydrogen silsesquioxane resin film into a second interlayer insulating film;

(e) subjecting said second interlayer insulating film to a second heat treatment by a rapid thermal annealing in an oxidizing gas atmosphere to densify the silicon oxide film; and

(f) forming a third interlayer insulating film and a second level wiring over the silicon oxide film of the preceramic phase.

20. A method according to claim 19, wherein the first heat treatment is performed at a temperature of 400°

C. or lower.

21. A method according to claim 19, wherein the second heat treatment is performed at a temperature of 700°

C. or higher.

22. A method according to claim 19, wherein the inert gas atmosphere of the heat treatment is nitrogen gas.

23. A method according to claim 19, wherein the third interlayer insulating film is made by using one of a method of forming a phosphosilicate glass film or a borophosphosilicate glass film by atmospheric pressure chemical vapor deposition (CVD).