Refractory metal capped low resistivity metal conductor lines and vias

• US 5,976,975 A
• Filed: 07/10/1998
• Issued: 11/02/1999
• Est. Priority Date: 02/26/1992
• Status: Expired due to Term

• Current Assignee: GlobalFoundries, Inc.
• Original Assignee: International Business Machines Corporation
• Inventors: Hsu, Louis L., Joshi, Rajiv V., Dalal, Hormazdyar M., Cuomo, Jerome J.
• Primary Examiner(s): Picardat, Kevin M.
• Assistant Examiner(s): COLLINS, DEVEN M
• Application Number:
  US09/113,917
• Time in Patent Office: 480 Days
• Field of Search: 438/672, 438/669, 438/584
• US Class Current: 438/672
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/7684 Smoothing; Planarisation
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76847 the layer being positioned within the main fill metal
• CPC Class Codes: H01L 21/76849 the layer being positioned on top of the main fill metal
• CPC Class Codes: H01L 21/76852 the layer also covering the sidewalls of the conductive structure
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/49866 characterised by the materials materials of the substrates H01L23/14, of the lead-frames H01L23/49579
• CPC Class Codes: H01L 23/53223 Additional layers associated with aluminium layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 23/53228 the principal metal being copper
• CPC Class Codes: H01L 23/53233 Copper alloys
• CPC Class Codes: H01L 23/53238 Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/09701 Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: Y10S 148/015 Capping layer
• CPC Class Codes: Y10S 257/915 with titanium nitride portion or region
• CPC Class Codes: Y10S 438/959 Mechanical polishing of wafer

Abstract

Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the-hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH₄ to WF₆ during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below lmtorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

Claims

1. A method of creating a liner in high aspect ratio, submicron holes and lines comprising the step of sputtering a refractory metal or an alloy or compound thereof through a collimator into a high aspect ratio, submicron hole or line at a pressure where scattering deposition dominates to create a liner effective to inhibit diffusion.

2. The method of claim 1 wherein the liner is a substantially conformal coating.

3. The method of claim 1 wherein the aspect ratio of said hole or line is greater than about 2:

1.

4. The method of claim 1 wherein the collimator has an aspect ratio of greater than about 1:

1.

5. The method of claim 1 wherein the pressure is greater than about 1 mTorr.

6. The method of claim 1 further comprising the step of introducing a metal or metal alloy within the liner.

7. The method of claim 1 further comprising the step of introducing copper or a copper-containing alloy within the liner.

8. The method of claim 1 wherein the sputtering step comprises a first step of sputtering a first refractory metal or an alloy or compound thereof through a first collimator into the high aspect ratio, submicron hole or line at a pressure where scattering deposition dominates and a second step of sputtering a second refractory metal or an alloy or compound thereof through a second collimator into the high aspect ratio, submicron hole or line at a pressure where scattering deposition dominates, the first and second sputtering steps creating the liner effective to inhibit diffusion.

9. The method of claim 8 wherein the first and second refractory metals or alloys or compounds thereof are different.

10. A method of creating a liner in high aspect ratio, submicron holes and lines comprising the step of sputtering a metal or an alloy or compound thereof into a high aspect ratio, submicron hole or line pressure where directional deposition dominates, without collimation, to create a liner effective to inhibit diffusion.

11. The method of claim 10 wherein the liner is a substantially conformal coating.

12. The method of claim 10 wherein the aspect ratio of said hole or line is greater than about 2:

1.

13. The method of claim 10 wherein said pressure where direction deposition dominates is below about 1 mTorr.

14. The method of claim 10 wherein metal or an alloy or compound thereof is a refractory metal or an alloy or compound thereof.

15. The method of claim 10 further comprising the step of introducing a metal or metal alloy within the liner.

16. The method of claim 10 further comprising the step of introducing copper or a copper-containing alloy within the liner.

17. The method of claim 10 wherein the sputtering step comprises a first step of sputtering a first metal or an alloy or compound thereof through a first collimator into the high aspect ratio, submicron hole or line at a pressure where scattering deposition dominates and a second step of sputtering a second metal or an alloy or compound thereof through a second collimator into the high aspect ratio, submicron hole or line at a pressure where scattering deposition dominates, the first and second sputtering steps creating the liner effective to inhibit diffusion.

18. The method of claim 17 wherein the first and second metals or alloys or compounds thereof are different.