Differential MOS current-mode logic circuit having high gain and fast speed

• US 5,977,800 A
• Filed: 10/20/1997
• Issued: 11/02/1999
• Est. Priority Date: 10/20/1997
• Status: Expired due to Term

• Current Assignee: Nexperia B.V. (Wingtech Technology Co., Ltd.)
• Original Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Inventors: Iravani, Kamran
• Primary Examiner(s): Tokar, Michael
• Assistant Examiner(s): TRAN, ANH Q
• Application Number:
  US08/955,012
• Time in Patent Office: 743 Days
• Field of Search: 326/112, 326/115, 326/118, 326/119, 326/122, 326/17, 326/83, 327/52, 327/65, 327/563
• US Class Current: 326/115
• CPC Class Codes: H03K 19/09432 with coupled sources or source coupled logic H03K19/096 takes precedence

Abstract

The differential MOS current-mode logic structure of the present invention is comprised of a differential MOS transistor pair and a complementary MOS (CMOS) transistor for each of the transistors comprising the differential MOS pair. The gates of the CMOS transistors are coupled to the gates of the differential MOS pair. Since the gates of the differential MOS pair receive a differential signal from the inputs, the voltage between the gate and the source, Vgs, for each of the transistors comprising the MOS differential pair is not fixed. As a result, the gain of the CMOS current-mode logic structure of the present invention is high. In addition, since the gates of the CMOS transistors are coupled to the gates of the differential MOS pair, the current for the CMOS transistors is increased when charging the node capacitance and is decreased when discharging the node capacitance. Hence, the present invention allows faster charging and discharging of transistors, which results in faster switching transistors and higher speed circuit.

Claims

1. A differential MOS current-mode logic circuit comprising:

a first transistor coupled to a second transistor at a common source, wherein a differential input signal is applied to the gates of the first and second transistors such that when one transistor is on, the other transistor is off;

a first complementary transistor having a gate coupled to the gate of the first transistor and having a drain coupled to a drain of the first transistor forming a first common drain node wherein a first current through the first complementary transistor is decreased when the first transistor is on and is increased when the first transistor is off so as to increase the gain and the switching speed at the first common node;

a second complementary transistor having a gate coupled to the gate of the second transistor and having a drain coupled to a drain of the first transistor forming a second common drain node wherein a second current through the second complementary transistor is decreased when the second transistor is on and is increased when the second transistor is off so as to increase the gain and the switching speed at the second common node;

a first diode and a second diode coupled to limit the voltages at the first and second common drain nodes, respectively, wherein the first and second diodes provides a current path for a bias current;

a first current source coupled to the common source of the first and second transistors to provide a bias current to the first and second transistors wherein a first output signal is generated at the first common drain node and a second output signal is generated at the second common drain node;

third and fourth transistors coupled in parallel and having a first common node coupled to said first common current source and having a second common node coupled to supply a second output signal wherein a gate of said third transistor is coupled to a third input signal and a gate of said fourth transistor is coupled to a fourth input signal; and

third and fourth complementary transistors coupled together in parallel and coupled between said second common node of said third and fourth transistors and said supply voltage wherein a gate of said third complementary transistor is coupled to said gate of said third transistor and wherein a gate of said fourth complementary transistor is coupled to said gate of said fourth transistor.

2. The circuit as recited in claim 1 wherein the differential input signal comprises a first input signal applied to the gate of the first transistor and a second input signal applied to the gate of the second transistor.

3. The circuit as recited in claim 1 wherein the first diode provides a current path for the bias current when the first transistor is turned on by the differential input signal.

4. The circuit as recited in claim 1 wherein the second diode provides a current path for the bias current when the first transistor is turned on by the differential input signal.

5. The circuit as recited in claim 1 wherein the first and second transistors are metal-oxide semiconductor (MOS) transistors and wherein the first and second complementary transistors are metal-oxide semiconductor (MOS) transistors.

6. The circuit as recited in claim 1 further comprising:

a first output transistor coupled to a source and the drain of the first complementary transistor for buffering the first output signal at the first common drain node of the first transistor and for generating a first buffered output signal;

a second output transistor coupled to a source and the drain of the second complementary transistor for buffering the second output signal at the second common drain node and for generating a second buffered output signal;

a second current source coupled to the first output transistor for providing a constant current to the first output transistor; and

a third current source coupled to the second output transistor for providing a constant current to the second output transistor.

7. The circuit as recited in claim 6 wherein the first transistor and the second transistor are both n-type MOSFETs.

8. The circuit as recited in claim 7 wherein the first complementary transistor and the second complementary transistor are both p-type MOSFETs.

9. The circuit as recited in claim 6 wherein the first transistor and the second transistor are both p-type MOSFETs and wherein the first complementary transistor and the second complementary transistor are both n-type MOSFETs.

10. The circuit as recited in claim 6 wherein the first output transistor and the second output transistor are both n-type MOSFETs and wherein the first output transistor and the second output transistor are both p-type MOSFETs.

11. The circuit as recited in claim 1 wherein the first diode and the second diode are both diode coupled MOSFETs.

12. A differential MOS current-mode logic circuit comprising:

first and second transistors coupled in series wherein said second transistor is coupled to a first common current source which is coupled to ground wherein a gate of said first transistor is coupled to a first input signal and a gate of said second transistor is coupled to a second input signal;

first and second complementary transistors coupled together in series and coupled between said first and second transistors and a supply voltage wherein a gate of said first complementary transistor is coupled to said gate of said first transistor and wherein a gate of said second complementary transistor is coupled to said gate of said second transistor and wherein a first output signal is taken between said second complementary transistor and said first transistor;

third and fourth transistors coupled in parallel and having a first common node coupled to said first common current source and having a second common node coupled to supply a second output signal wherein a gate of said third transistor is coupled to a third input signal and a gate of said fourth transistor is coupled to a fourth input signal; and

third and fourth complementary transistors coupled together in parallel and coupled between said second common node of said third and fourth transistors and said supply voltage wherein a gate of said third complementary transistor is coupled to said gate of said third transistor and wherein a gate of said fourth complementary transistor is coupled to said gate of said fourth transistor.

13. The circuit as recited in claim 12 wherein said first, second, third and fourth complementary transistors are p-type MOSFETs and wherein said first, second, third and fourth transistors are n-type MOSFETs.

14. The circuit as recited in claim 12 wherein the circuit implements an AND gate function by selecting the first input signal and the third input signal as AND gate inputs and by selecting the first output signal as the AND gate output.

15. The circuit as recited in claim 12 wherein the circuit implements an NAND gate function by selecting the first input signal and the third input signal as NAND gate inputs and by selecting the second output signal as the NAND gate output.

16. The circuit as recited in claim 12 wherein the circuit implements an OR gate function by selecting the second input signal and the fourth input signal as OR gate inputs and by selecting the second output signal as the OR gate output.

17. The circuit as recited in claim 12 wherein the circuit implements an NOR gate function by selecting the second input signal and the fourth input signal as NOR gate inputs and by selecting the first output signal as the NOR gate output.

18. The circuit as recited in claim 12 further comprising:

a first output transistor having a source coupled to said supply voltage and a drain coupled to a second current source which is coupled to ground, said first output transistor having a gate coupled to said first output signal and for supplying a first output buffered signal; and

a second output transistor having a source coupled to said supply voltage and a drain coupled to a third current source which is coupled to ground, said second output transistor having a gate coupled to said second output signal and for supplying a second output buffered signal.

19. The circuit as recited in claim 18 further comprising:

a first diode coupled between said gate of said first output transistor and said supply voltage; and

a second diode coupled between said gate of said second output transistor and said supply voltage.