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Low noise transistor module and amplifier

  • US 5,977,830 A
  • Filed: 11/20/1997
  • Issued: 11/02/1999
  • Est. Priority Date: 12/03/1996
  • Status: Expired due to Term
First Claim
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1. A low noise transistor integrated circuit module having an effective gate width Weff comprisinga cell including k FETs each having a gate length L and a gate width W=Weff N, where k=1, 2 . . . said FETs being electrically connected in parallel with one another when k>

  • 1, and each of said FETs having a gate width of about 2.5 μ

    m or less,a plurality m of said cells being topologically arranged in a row and being electrically connected in parallel with one another, anda plurality n of said rows being arranged topologically parallel to one another and being electrically connected in parallel with one another, so that said effective gate width of said module is increased by a factor of kmn=N compared to said gate width W, thereby to decrease the gate resistance and noise figure of said module compared to a single transistor having a gate width Weff.

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