Light phase grating device

• US 5,978,127 A
• Filed: 09/09/1997
• Issued: 11/02/1999
• Est. Priority Date: 09/09/1997
• Status: Expired due to Term

• Current Assignee: IXYS Intl Limited (Littelfuse Incorporated)
• Original Assignee: ZiLOG Incorporated (Littelfuse Incorporated)
• Inventors: Berg, John E.
• Primary Examiner(s): Epps, Georgia
• Assistant Examiner(s): Lester, Evelyn A.
• Application Number:
  US08/926,226
• Time in Patent Office: 784 Days
• Field of Search: 359/279, 359/291, 359/292, 359/295, 359/846, 359/847
• US Class Current: 359/279
• CPC Class Codes: G02B 26/02 for controlling the intensity of light G02B26/004 takes precedence
• CPC Class Codes: G02B 26/0808 by means of one or more diffracting elements

Abstract

In a light phase grating device, by forming the beam with a bottom conductive layer, the beam will not stick to the conductive layer on the substrate. The triboelectric effect will not occur, because the bottom conductive layer of the beam will allow charges to dissipate.

Claims

1. A light phase grating device for either reflecting or diffracting an incoming light in response to an applied voltage, said grating device comprising:

a first conductive layer;

a beam having at least a portion thereof comprising top and bottom conductive layers being electrically insulated from each other by an interposing insulating layer; and

a support structure for supporting at least said portion of said beam in a suspended state over said first conductive layer, and in a manner that when said applied voltage is applied across said top and first conductive layers, at least said portion of said beam moves to a deflected state whereat said bottom conductive layer is in contact with said first conductive layer; and

wherein the bottom and first conductive layers include a tungsten conductive layer.

4. The light phase grating device of any one of claims 1, 2, or 3, wherein the insulating layer includes a silicon nitride layer.

6. The light phase grating device of any one of claims 1, 2, 3, or 5, wherein the support structure includes a layer of silicon dioxide disposed on said first conductive layer.

13. The light phase grating device of any one of claims 1, 2, 3, or 5, wherein the top conductive layer is made of the same material as the bottom conductive layer.

15. The light phase grating device of claim 1 or claim 2, wherein the top conductive layer includes either an aluminum or aluminum alloy conductive layer.

16. The light phase grating device of any of claims 1, 2, or 3, further including a second insulating layer interposed between said first conductive layer and a substrate.

2. A light phase grating device for either reflecting or diffracting an incoming light in response to an applied voltage, said grating device comprising:

a first conductive layer;

a beam having at least a portion thereof comprising top and bottom conductive layers being electrically insulated from each other by an interposing insulating layer; and

a support structure for supporting at least said portion of said beam in a suspended state over said first conductive layer, and in a manner that when said applied voltage is applied across said top and first conductive layers, at least said portion of said beam moves to a deflected state whereat said bottom conductive layer is in contact with said first conductive layer; and

wherein the bottom and first conductive layers include a polysilicon conductive layer.

3. A light phase grating device for either reflecting or diffracting an incoming light in response to an applied voltage, said grating device comprising:

a first conductive layer;

a beam having at least a portion thereof comprising top and bottom conductive layers being electrically insulated from each other by an interposing insulating layer; and

a support structure for supporting at least said portion of said beam in a suspended state over said first conductive layer, and in a manner that when said applied voltage is applied across said top and first conductive layers, at least said portion of said beam moves to a deflected state whereat said bottom conductive layer is in contact with said first conductive layer; and

wherein the top conductive layer includes either an aluminum or aluminum alloy conductive layer.

5. A light phase grating device for either reflecting or diffracting an incoming light in response to an applied voltage, said grating device comprising:

a first conductive layer;

a first insulating layer interposed between said first conductive layer and a substrate

a beam having at least a portion thereof comprising top and bottom conductive layers being electrically insulated from each other by a second interposing insulating layer; and

a support structure for supporting at least said portion of said beam in a suspended state over said first conductive layer, and in a manner that when said applied voltage is applied across said top and first conductive layers, at least said portion of said beam moves to a deflected state whereat said bottom conductive layer is in contact with said first conductive layer.

14. The light phase grating device of claim 5, wherein the second insulating layer includes a silicon nitride layer.

7. A light phase grating device for either reflecting or diffracting an incoming light in response to an applied voltage, said grating device comprising:

a first conductive layer;

a beam having at least a portion thereof comprising top and bottom conductive layers being electrically insulated from each other by an interposing insulating layer, wherein said top conductive layer includes an aluminum or aluminum alloy conductive layer, wherein said insulating layer includes a silicon nitride layer, and wherein said first and bottom conductive layer includes a tungsten layer; and

a support structure for supporting at least said portion of said beam in a suspended state over said first conductive layer, and in a manner that when said applied voltage is applied across said top and first conductive layers, at least said portion of said beam moves to a deflected state whereat said bottom conductive layer is in contact with said first conductive layer.

9. The light phase grating device of claim 7, wherein the thickness of said aluminum or aluminum alloy conductive layer is about 400 Angstroms, wherein said thickness of said the bottom conductive layer and the silicon nitride combined is about 1325 Angstroms, and wherein a space of about 1325 Angstroms is defined between said first and bottom conductive layers when said applied voltage is removed.

10. The light phase grating device of claim 9, further including a layer of silicon dioxide interposed between said first conductive layer and a substrate.

8. A light phase grating device for either reflecting or diffracting an incoming light in response to an applied voltage, said grating device comprising:

a first conductive layer;

a beam having at least a portion thereof comprising top and bottom conductive layers being electrically insulated from each other by an interposing insulating layer, wherein said top conductive layer includes an aluminum or aluminum alloy conductive layer, wherein said insulating layer includes a silicon nitride layer, and wherein said first and bottom conductive layer includes a polysilicon conductive layer; and

a support structure for supporting at least said portion of said beam in a suspended state over said first conductive layer, and in a manner that when said applied voltage is applied across said top and first conductive layers, at least said portion of said beam moves to a deflected state whereat said bottom conductive layer is in contact with said first conductive layer.

11. The light phase grating device of claim 8, wherein the thickness of said aluminum or aluminum alloy conductive layer is about 400 Angstroms, wherein said thickness of said the bottom conductive layer and the silicon nitride combined is about 1325 Angstroms, and wherein a space of about 1325 Angstroms is defined between said first and bottom conductive layers when said applied voltage is removed.

12. The light phase grating device of claim 11, further including a layer of silicon dioxide interposed between said first conductive layer and said substrate.