Monolithic vertical cavity surface emitting laser and resonant cavity photodetector transceiver

• US 5,978,401 A
• Filed: 10/25/1996
• Issued: 11/02/1999
• Est. Priority Date: 10/25/1995
• Status: Expired due to Term

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Honeywell Incorporated (Honeywell International Inc.)
• Inventors: Morgan, Robert A.
• Primary Examiner(s): Bovernick, Rodney
• Assistant Examiner(s): Leung, Quyen Phan
• Application Number:
  US08/736,803
• Time in Patent Office: 1,103 Days
• Field of Search: 372/50, 372/96, 372/92, 372/99, 372/45, 372/46, 257/98, 257/80, 257/185, 359/152, 438/24
• US Class Current: 372/50.21
• CPC Class Codes: H01S 5/02325 Mechanically integrated components on mount members or optical micro-benches
• CPC Class Codes: H01S 5/0262 Photo-diodes, e.g. transceiver devices, bidirectional devices H01S5/0265 takes precedence
• CPC Class Codes: H01S 5/183 having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
• CPC Class Codes: H01S 5/18305 with emission through the substrate, i.e. bottom emission

Abstract

A monolithic transceiver that includes both a vertical cavity surface emitting laser (VCSEL) and a resonant cavity photodetector (RCPD) formed therein. The monolithic transceiver may also be an array of VCSEL and RCPD devices. The monolithic transceiver may be an integrated circuit, and may include a substrate layer. Both the vertical cavity surface emitting laser and the resonant cavity photodetector may be grown or otherwise formed on the substrate layer using standard processing techniques. Because standard processing techniques may be used, the present invention may provide a highly manufacturable transceiver, with independently controlled laser and photodetector characteristics.

Claims

1. An optical transceiver, comprising:

a monolithic device having a vertical cavity surface emitting laser with at least one mirror region having a first reflectivity, and a resonant cavity photodetector with at least one mirror region having a second reflectivity that is greater than an AlGaAs semiconductor-air interface, wherein the first reflectivity is different than the second reflectivity.

2. An optical transceiver according to claim 1 wherein the vertical cavity surface emitting laser is formed from a number of layers disposed on the common substrate.

3. An optical transceiver according to claim 2 wherein the resonant cavity photodetector is formed from selected ones of the number of layers.

4. An optical transceiver according to claim 3 wherein at least a portion of the vertical cavity surface emitting laser and a portion of the resonant cavity photodetector are electrically isolated from one another.

5. An optical transceiver according to claim 1 wherein the monolithic device is a monolithic integrated circuit device.

6. An optical transceiver for providing an output light emission in response to an input electrical signal and for providing an output electrical signal in response to an input light emission, comprising:

a vertical cavity surface emitting laser for providing the output light emission in response to the input electrical signal; and

a resonant cavity photodetector for providing the output electrical signal in response to the input light emission, wherein the vertical cavity surface emitting laser and the resonant cavity photodetector are monolithically formed on a common substrate, and wherein the input light emission and output light emission travel generally parallel to an axis that is substantially perpendicular to the common substrate, the vertical cavity surface emitting laser having an output mirror and the resonant cavity photodetector having an input mirror, the output mirror and the input mirror each formed from one or more DBR mirror periods, the output mirror of the vertical cavity surface emitting laser having a higher reflectivity than the input mirror of the resonant cavity photodetector.

7. A monolithic optical transceiver, comprising:

a vertical cavity surface emitting laser including;

a first VCSEL mirror region having a first reflectivity, the first VCSEL mirror region electrically coupled to a first VCSEL terminal;

a second VCSEL mirror region electrically coupled to a second VCSEL terminal; and

a VCSEL active region situated between the first and second, VCSEL mirror regions;

a resonant cavity photodetector including;

a first RCPD mirror region having one or more DBR mirror periods and having a second reflectivity that is different from the first reflectivity of the first VCSEL mirror region, said first RCPD mirror region electrically coupled to a first RCPD terminal;

a second RCPD mirror region electrically coupled to a second RCPD terminal; and

an RCPD active region situated between the first and second RCPD mirror regions.

8. A monolithic optical transceiver according to claim 7 wherein the first VCSEL mirror region includes a low mirror and a high mirror, and the first RCPD mirror regions only includes the low mirror, wherein the low mirror includes one or more DBR mirror periods and the high mirror includes a dielectric stack.

9. A monolithic optical transceiver according to claim 8 wherein the first VCSEL terminal is a planer metal contact disposed between the low mirror and the high mirror.

10. A monolithic optical transceiver according to claim 7 wherein the first RCPD mirror region and the first VCSEL mirror region are formed, at least in part, from a number of first common layers.

11. A monolithic optical transceiver according to claim 7 wherein the second RCPD mirror region and the second VCSEL mirror region are formed, at least in part, from a number of second common layers.

12. A monolithic optical transceiver according to claim 7 wherein the RCPD active region and the VCSEL active regions are formed, at least in part, from a number of third common layers.

13. An optical transceiver for providing an output light emission in response to an input electrical signal and for providing an output electrical signal in response to an input light emission, comprising:

a monolithic device having a vertical cavity surface emitting laser means for providing the output light emission in response to the input electrical signal, and a resonant cavity photodetector means for providing the output electrical signal in response to the input light emission, wherein the input light emission and output light emission travel generally parallel to an axis that is substantially perpendicular to the common substrate, the vertical cavity surface emitting laser means having an output mirror and the resonant cavity photodetector means having an input mirror, the output mirror and the input mirror each including a dielectric stack and each having a number of dielectric stack layers, the output mirror of the vertical cavity surface emitting laser means having a higher reflectivity than the input mirror of the resonant cavity photodetector means.

14. An optical transceiver according to claim 13 wherein the vertical cavity surface emitting laser means and the resonant cavity photodetector means are formed on a common substrate.

15. An optical transceiver according to claim 14 wherein at least a portion of the vertical cavity surface emitting laser means and a portion of the resonant cavity photodetector means are electrically isolated from one another.

16. An optical transceiver according to claim 13 wherein the monolithic device is a monolithic integrated circuit device.

17. A monolithic optical transceiver, comprising:

a vertical cavity surface emitting laser including;

first VCSEL mirror means having a first reflectivity, the first VCSEL mirror means electrically coupled to a first VCSEL terminal;

second VCSEL mirror means electrically coupled to a second VCSEL terminal; and

VCSEL active region means situated between the first and second VCSEL mirror means;

a resonant cavity photodetector including;

first RCPD mirror means having two or more dielectric stack layers and having a second reflectivity that is different from the first reflectivity of the first VCSEL mirror means, said first RCPD mirror means electrically coupled to a first RCPD terminal;

second RCPD mirror means electrically coupled to a second RCPD terminal; and

RCPD active region means situated between the first and second RCPD mirror means.

18. A monolithic optical transceiver according to claim 17 wherein the first VCSEL mirror means includes a low mirror and a high mirror and the first RCPD mirror means only includes the low mirror, wherein the low mirror includes one or more DBR mirror periods and the high mirror includes a dielectric stack.

19. A monolithic optical transceiver according to claim 18 wherein the first VCSEL terminal is a planer metal contact disposed between the low mirror and the high mirror.

20. A method for forming an optical transceiver, comprising the step of:

monolithically forming a vertical cavity surface emitting laser and a resonant cavity photodetector on a common substrate, wherein the vertical cavity surface emitting laser includes a first mirror region with a first reflectivity and the resonant cavity photodetector includes a second mirror region with a second reflectivity that is greater than an AlGaAs semiconductor-air interface, wherein the first reflectivity is different from the second reflectivity.

21. A method according to claim 20 wherein the monolithically forming step includes the steps of:

forming a first DBR mirror on a substrate;

forming an active region on the first DBR mirror region;

forming a second DBR mirror on the active region;

electrically isolating a first portion of the active region and the second DBR mirror from a second portion thereof, wherein the first portion provides a portion of the vertical cavity surface emitting laser and the second portion provides a portion of the resonant cavity photodetector.

22. A method according to claim 21 wherein the providing step comprises the step of forming a third mirror above the active region, and at the first portion.

23. A method according to claim 22 further comprising the step of forming a contact layer, wherein the contact layer is electrically coupled to the second DBR mirror.

24. A method according to claim 23 wherein the electrically isolating step electrically isolates a first portion of the contact layer from a second portion thereof, wherein the first portion provides a contact for the vertical cavity surface emitting laser and the second portion provides a contact for the resonant cavity photodetector.

25. A method according to claim 22 wherein the forming step of claim 22 includes the step of disposing a dielectric stack on the first portion of the second DBR mirror.

26. A method according to claim 25 further comprising the step of disposing a planer metal contact on the first portion of the second DBR mirror and below the dielectric stack.

27. An optical transceiver array, comprising:

a monolithic device forming an array of vertical cavity surface emitting lasers and an array of resonant cavity photodetectors, wherein selected ones of the vertical cavity surface emitting lasers have a mirror region formed from one or more DBR mirror periods that exhibit more reflectivity than a mirror region also formed from one or more DBR mirror periods of selected ones of the resonant cavity photodetectors.

28. An optical transceiver array according to claim 27 wherein the array of vertical cavity surface emitting lasers and the array of resonant cavity photodetectors are positioned on a common substrate.

29. An optical transceiver array according to claim 28 wherein the array of vertical cavity surface emitting lasers is separated from the array of resonant cavity photodetectors.

30. An optical transceiver array according to claim 28 wherein the array of vertical cavity surface emitting lasers is inter-digitated with the array of resonant cavity photodetectors.

31. An optical transceiver array according to claim 28 wherein selected ones of the vertical cavity surface emitting lasers in the array of vertical cavity surface emitting lasers are formed from a number of common layers.

32. An optical transceiver array according to claim 31 wherein selected ones of the resonant cavity photodetectors in the array of resonant cavity photodetectors are formed from selected ones of the number of common layers.

33. An optical transceiver array according to claim 27 wherein selected ones of the vertical cavity surface emitting lasers are electrically isolated from one another.

34. An optical transceiver array according to claim 33 wherein selected ones of the vertical cavity surface emitting lasers are electrically isolated from selected ones of the resonant cavity photodetectors.

35. An optical transceiver array according to claim 34 wherein selected ones of the resonant cavity photodetectors are electrically isolated from one another.

36. An optical transceiver array according to claim 27 wherein the array of vertical cavity surface emitting lasers and the array of resonant cavity photodetectors are on a common integrated circuit.

37. An optical transceiver array according to claim 27 wherein selected ones of the vertical cavity surface emitting lasers are each controlled by a different input signal.

38. An optical transceiver array according to claim 37 wherein selected ones of the resonant cavity photodetectors are each provide a different output signal.