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Process for producing a semiconductor substrate

  • US 5,980,633 A
  • Filed: 07/23/1997
  • Issued: 11/09/1999
  • Est. Priority Date: 12/28/1993
  • Status: Expired due to Fees
First Claim
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1. A process for producing a semiconductor substrate, comprising successively the steps of:

  • a) forming a member comprising a porous semiconductor layer on a non-porous single-crystal semiconductor region and a non-porous single-crystal semiconductor layer on said porous semiconductor layer;

    b) bonding said non-porous single-crystal semiconductor layer to a substrate at a first temperature;

    c) grinding said non-porous single-crystal semiconductor region so that part of said non-porous single-crystal semiconductor region is removed and part remains;

    d) after the grinding, heating said non-porous single-crystal semiconductor layer and said substrate bonded to each other at a second temperature higher than the first temperature;

    e) grinding or etching said non-porous single-crystal semiconductor region remaining after the first grinding step c), to entirely remove said non-porous single-crystal semiconductor region and to expose said porous semiconductor layer; and

    f) selectively etching said porous semiconductor layer to remove said porous semiconductor layer.

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