Process for producing a semiconductor substrate

• US 5,980,633 A
• Filed: 07/23/1997
• Issued: 11/09/1999
• Est. Priority Date: 12/28/1993
• Status: Expired due to Fees

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.)
• Inventors: Yamagata, Kenji, Yonehara, Takao
• Primary Examiner(s): Utech, Benjamin
• Assistant Examiner(s): CHAMPAGNE, DONALD
• Application Number:
  US08/898,917
• Time in Patent Office: 839 Days
• Field of Search: 117/94, 117/97, 438/406, 438/459, 438/691, 438/705, 438/745, 438/751, 438/753
• US Class Current: 117/94
• CPC Class Codes: H01L 21/76256 using silicon etch back techniques, e.g. BESOI, ELTRAN
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer

Abstract

A bonded substrate and a process for its production is provided to solve the problem involved in the heat treatment which tends to cause troubles such as break, separation and warpage of the substrates bonded. A single-crystal semiconductor epitaxially grown on a porous semiconductor substrate is bonded to an insulator substrate, and the semiconductor substrate is removed by etching, grinding, or a combination of the both, where no heat treatment is carried out or, even if carried out, only once.

Claims

1. A process for producing a semiconductor substrate, comprising successively the steps of:

a) forming a member comprising a porous semiconductor layer on a non-porous single-crystal semiconductor region and a non-porous single-crystal semiconductor layer on said porous semiconductor layer;

b) bonding said non-porous single-crystal semiconductor layer to a substrate at a first temperature;

c) grinding said non-porous single-crystal semiconductor region so that part of said non-porous single-crystal semiconductor region is removed and part remains;

d) after the grinding, heating said non-porous single-crystal semiconductor layer and said substrate bonded to each other at a second temperature higher than the first temperature;

e) grinding or etching said non-porous single-crystal semiconductor region remaining after the first grinding step c), to entirely remove said non-porous single-crystal semiconductor region and to expose said porous semiconductor layer; and

f) selectively etching said porous semiconductor layer to remove said porous semiconductor layer.

2. The process according to claim 1, wherein the first temperature is room temperature.

3. The process according to claim 1, wherein each of said non-porous single-crystal semiconductor region, said porous semiconductor layer, and said non-porous single-crystal semiconductor layer comprises silicon.

4. The process according to claim 1, wherein said non-porous single-crystal semiconductor layer is bonded to said substrate with an oxide film formed on a surface of said non-porous single-crystal semiconductor layer therebetween.

5. A process for producing a semiconductor substrate, comprising the steps of:

(a) anodizing a surface layer on one side of a single crystal semiconductor substrate to make the surface layer porous, thereby to form a porous single-crystal semiconductor layer on a non-porous single-crystal semiconductor region;

(b) epitaxially growing a non-porous single-crystal semiconductor layer on said porous single-crystal semiconductor layer;

(c) bringing the surface of said non-porous single-crystal semiconductor layer into close contact with the surface of an insulator substrate and then bonding both to each other substantially without heating;

(d) removing at least part of said non-porous single-crystal semiconductor region by the following steps;

(i) grinding down said non-porous single-crystal semiconductor region to remove a part thereof;

(ii) heating the whole to strengthen the bonding between said non-porous single-crystal semiconductor layer and said insulator substrate; and

(iii) removing the remainder part of said non-porous single-crystal semiconductor region; and

(e) selectively etching said porous single-crystal semiconductor layer to remove said porous single-crystal semiconductor layer.

6. The process according to claim 5, wherein the surface of said non-porous single-crystal layer grown in step (b) is oxidized to form an insulator film before being brought into contact with the surface of said insulator substrate in said step (c), and in step (c) the insulator film is brought into contact with, and bonded to, said insulator substrate.

7. The process according to claim 5 or 6, wherein the thickness of said non-porous single-crystal semiconductor region remaining after performing step (d) (i) is 100 μ

m or more.

8. The process according to claim 5 or 6, wherein the step (d) (iii) of removing comprises etching said non-porous single-crystal semiconductor region remaining after said grinding step (d) (i), to entirely remove said non-porous single-crystal semiconductor region to expose said porous single-crystal semiconductor layer.

9. The process according to claim 8, wherein said etching step is carried out in any of an alkali solution, an organic alkali solution or an acid solution containing hydrofluoric acid and nitric acid, maintained at a temperature of 100°

C. or below.

10. The process according to claim 9, wherein said porous single-crystal layer is silicon and said etching is continued to thin, but not remove, said porous single-crystal semiconductor layer.

11. The process according to claim 5 or 6, wherein the step (d) (iii) of removing comprises grinding said non-porous single-crystal semiconductor region remaining after said grinding step (d) (i).

12. The process according to claim 5 or 6, wherein in step (c) pressure is applied to said semiconductor substrate and said insulator substrate to press them together to increase bonding strength.

13. The process according to claim 5 or 6, wherein said semiconductor substrate is silicon and said insulator substrate is SiO₂.

14. The process according to claim 13, wherein following step (e), heat is applied at a temperature of 800°

C. or above to increase the bonding of said non-porous single-crystal layer to said insulator substrate.

16. The process for producing a semiconductor substrate according to claim 8, wherein grinding said non-porous single-crystal semiconductor region to remove part of said non-porous single-crystal semiconductor region is carried out in the manner that said non-porous single-crystal semiconductor region remains in a thickness of 100 μ

m or more in the step d).

17. The process for producing a semiconductor substrate according to claim 8, wherein the bonding is carried out by pressing the both substrates in the step c).

18. The process for producing a semiconductor substrate according to claim 8, wherein the selective etching of said porous single-crystal semiconductor layer is carried out in a mixed ethcing solution of hydrofluoric acid and aqueous hydrogen peroxide in the step f).

19. The process for producing a semiconductor substrate according to claim 8, wherein the surface of said non-porous single-crystal semiconductor layer is oxidized to form a surface oxide layer and the surface oxide layer is brought into close contact with the insulator substrate in the step c).

20. The process for producing a semiconductor substrate according to claim 8, wherein said insulator substrate is a light-transmitting insulator substrate.

21. The process for producing a semiconductor substrate according to claim 13, wherein said light-transmitting insulator substrate is mainly composed of SiO₂.

22. The process for producing a semiconductor substrate according to claim 8, wherein said single-crystal semiconductor substrate is mainly composed of silicon.

15. A process for producing a semiconductor substrate, comprising successively the steps of:

a) anodizing a surface layer on one side of a single-crystal semiconductor substrate to make the surface layer porous to form a porous single-crystal semiconductor layer on a non-porous single-crystal semiconductor region;

b) epitaxially growing a non-porous single-crystal semiconductor layer on said porous single-crystal semiconductor layer;

c) bringing the surface of said non-porous single-crystal semiconductor layer into close contact with the surface of an insulator substrate and then bonding the both to each other substantially without heating;

d) grinding said non-porous single-crystal semiconductor region to remove part of said non-porous single-crystal semiconductor region;

d₂) heating the whole to strengthen the bond between said non-porous single-crystal semiconductor layer and said insulator substrate;

d₃) grinding further said non-porous single-crystal semiconductor region having remained after the grinding step d), to entirely remove said non-porous single-crystal semiconductor region to expose said porous single-crystal semiconductor layer; and

f) selectively etching said porous single-crystal semiconductor layer to remove said porous single-crystal semiconductor layer.