Method and devices for detecting the end point of plasma process

• US 5,980,767 A
• Filed: 07/24/1997
• Issued: 11/09/1999
• Est. Priority Date: 02/25/1994
• Status: Expired due to Term

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited, Tokyo Electron Yamanashi Ltd. (Tokyo Electron Limited)
• Inventors: Higuchi, Kimihiro, Koshimizu, Chishio
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/899,864
• Time in Patent Office: 838 Days
• Field of Search: 216/60, 438/9
• US Class Current: 216/60
• CPC Class Codes: B81C 1/00587 Processes for avoiding or controlling over-etching not provided for in B81C1/00571 - B81C1/00579
• CPC Class Codes: B81C 2201/0142 Processes for controlling etch progression not provided for in B81C2201/0136 - B81C2201/014
• CPC Class Codes: B81C 99/0065 Process control; Yield prediction
• CPC Class Codes: G01N 21/68 using high frequency electric fields
• CPC Class Codes: H01J 37/32963 End-point detection
• CPC Class Codes: H01J 37/3299 Feedback systems

Abstract

Disclosed herein is a method of detecting an end point of plasma process performed on an object, and a plasma process apparatus. The method includes the steps of detecting an emission spectrum over a wavelength region specific to C₂ in the plasma, by optical detecting means, and determining the end point of the plasma process from the emission intensity of the emission spectrum detected by the optical detector. The apparatus has a process chamber, a pair of electrodes, a light-collecting device, an optical detector, and a determining device. The chamber has a monitor window. The electrodes are located in the process chamber. The first electrode is used to support the object. A high-frequency power is supplied between the electrodes to change a process gas into plasma. The light-collecting device collects the light from the plasma through the monitor window. The optical detector detects an emission spectrum from the light collected. The determining device determines the end point of the plasma process from the emission intensity of the emission spectrum detected. The monitor window is secured to the distal end of a cylindrical member protruding from the chamber. The member has a narrow gas passage for trapping a gas generated by the plasma process.

Claims

1. A method of detecting an end point of plasma process performed on an object, comprising the steps of:

detecting an emission spectrum over a wavelength region specific to C₂ in said plasma, by optical detection means; and

determining the end point of the plasma process from the emission intensity of the emission spectrum detected by said optical detecting means.

2. A method according to claim 1, wherein said plasma process is etching.

3. A method according to claim 1, wherein a gas containing a carbon compound is used in said plasma process.

4. A method according to claim 3, wherein said gas is one selected from the group consisting of CF₄ gas, C₂ F₆ gas, C₄ F₈ gas and CHF₃ gas.

5. A method according to claim 3, wherein CO gas is added to said gas.

6. A method according to claim 1, wherein the wavelength region specific to C₂ is one selected from the group consisting of a wavelength region ranging from 465 to 474 nm, a wavelength region ranging from 505 to 517 nm, and a wavelength region ranging from 550 to 564 nm.

7. A method according to claim 6, wherein said emission spectrum ranges over one of said wavelength regions.

8. A method according to claim 1, wherein said plasma process is performed at a pressure of at most 10^-2 Torr.

9. A method of detecting an end point of plasma process performed on an object made of material containing at least silicon by using plasma of a gas containing a compound made of at least carbon and fluorine, comprising the steps of:

detecting an emission spectrum over a wavelength region specific to C₂ by optical detecting means and an emission spectrum of over a wavelength region specific to Si or SiF_X (X=1 to

     3);

measuring emission intensities of said emission spectra and obtaining a ratio or difference between the emission intensities of said emission spectra; and

determining the end point of the plasma process by comparing said ratio or difference with a predetermined reference value.

10. A method according to claim 9, wherein said object is a silicon oxide film.

11. A method according to claim 10, wherein an emission spectrum over a wavelength region specific to CF_Y (Y=1 or 2) is detected, instead of the emission spectrum over a wavelength region specific to C₂.

12. A method according to claim 9, wherein CO gas is added to said gas.

13. A method according to claim 9, wherein the wavelength region specific to C₂ is one selected from the group consisting of a wavelength region ranging from 465 to 474 nm, a wavelength region ranging from 505 to 517 nm, and a wavelength region ranging from 550 to 564 nm.