Integrated multi-layer test pads and methods therefor
First Claim
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1. A method for forming an integrated multi-layer test pad on a semiconductor wafer, comprising:
- forming an underlying matrix of interconnected first pads, said first pads being configured for electrically coupling to said integrated semiconductor device;
depositing an oxide layer above said underlying matrix; and
forming an overlying matrix of interconnected second pads above said oxide layer, said overlying matrix being electrically coupled to said underlying matrix by at least one conductive via through said oxide layer, one of said first pads having a first surface area smaller than a second surface area of one of said second pads, said one of said second pads being disposed above and completely overlapping said one of said first pads, whereby said one of said second pads masks an area under said one of said second pads, including said one of said first pads, from being etched by an oxide etchant.
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Abstract
A multi-layer test pad on a semiconductor wafer, which includes an underlying matrix of interconnected first pads, which are arranged in rows and columns. The multi-layer test pad includes an oxide layer disposed above the underlying matrix and in between the rows and columns. The multi-layer test pad further includes an overlying matrix of interconnected second pads disposed above the oxide layer. Each of the second pads completely overlaps at least nine of the first pads, including four oxide regions surrounding a center first pad of the nine of the first pads. The nine of the first pads are arranged as 3×3 block of the first pads.
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Citations
8 Claims
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1. A method for forming an integrated multi-layer test pad on a semiconductor wafer, comprising:
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forming an underlying matrix of interconnected first pads, said first pads being configured for electrically coupling to said integrated semiconductor device; depositing an oxide layer above said underlying matrix; and forming an overlying matrix of interconnected second pads above said oxide layer, said overlying matrix being electrically coupled to said underlying matrix by at least one conductive via through said oxide layer, one of said first pads having a first surface area smaller than a second surface area of one of said second pads, said one of said second pads being disposed above and completely overlapping said one of said first pads, whereby said one of said second pads masks an area under said one of said second pads, including said one of said first pads, from being etched by an oxide etchant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification