Method of forming a silicon gate to produce silicon devices with improved performance

• US 5,981,364 A
• Filed: 12/06/1995
• Issued: 11/09/1999
• Est. Priority Date: 12/06/1995
• Status: Expired due to Term

• Current Assignee: Cypress Semiconductor Corporation (Infineon Technologies AG)
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Ramsbey, Mark T., Wang, Hsingya Arthur, Sun, Yu
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US08/568,195
• Time in Patent Office: 1,434 Days
• Field of Search: 438/585, 438/592, 438/197, 438/595, 438/FOR 349, 438/FOR 351, 438/FOR 353
• US Class Current: 438/592
• CPC Class Codes: H01L 21/28035 the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities H01L21/28105 takes precedence
• CPC Class Codes: H01L 29/4925 with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with only a vertical doping structure or vertical doping variation H01L29/4916

Abstract

Disclosed herein is a method of forming a silicon gate stack onto a silicon substrate for a silicon device. The method of forming the silicon gate stack comprises the steps of growing an oxide layer onto the silicon substrate, depositing a thin layer of silicon to form a thin layer of silicon over the oxide layer, depositing a thick layer of silicon over the thin layer of silicon, and introducing impurities into only the thick layer of silicon to form a silicon gate whereby the silicon gate includes the thin layer of silicon and the thick layer of silicon having the impurities. The impurities being introduced with a concentration, the impurities concentration and the thick layer thickness impeding an encroachment by the oxide layer into the silicon gate during application of a protective screen oxide layer around the silicon gate stack.

Claims

1. A method of forming a silicon gate stack over a silicon substrate of a semiconductor device, the method comprising the steps of:

growing an oxide layer over the silicon substrate;

depositing a thin layer of silicon in the absence of impurities to form a thin layer of silicon over the oxide layer;

depositing a thick layer of silicon over the thin layer of silicon, the thick layer having a greater thickness than the thin layer;

introducing impurities into only the thick layer of silicon to form a silicon gate which includes the thin layer of silicon having no impurities and the thick layer of silicon having the impurities, the impurities being introduced with a concentration; and

applying a protective screen oxide layer around the silicon gate stack, the impurities concentration and the thick layer thickness impeding an encroachment by the oxide layer into the silicon gate during application of the protective screen oxide layer around the silicon gate stack.

2. The method of forming the silicon gate stack according to claim 1, wherein the thin layer has physical properties including a thickness, a grain size and a number of granules per area, the thickness including a one crystalline thickness, and wherein the physical properties of the thin layer improve the quality of the oxide layer.

3. The method of forming the silicon gate stack according to claim 1, wherein the layers of silicon comprise polysilicon.

4. The method of forming the silicon gate stack according to claim 1, wherein the layers of silicon comprise amorphous silicon.

5. The method of forming the silicon gate stack according to claim 1, wherein the oxide layer comprises silicon oxide.

6. The method of forming the silicon gate stack according to claim 1 further comprises the step of growing a second oxide layer onto the thick layer of silicon.

7. A method of forming a silicon gate stack over a silicon substrate of a semiconductor device, the method comprising the steps of:

growing an oxide layer over the silicon substrate;

depositing a thin layer of silicon in the absence of impurities to form a thin layer of silicon over the oxide layer;

depositing a thick layer of silicon over the thin layer of silicon, the thick layer having a greater thickness than the thin layer;

introducing impurities into the thick layer of silicon by doping the thick layer of silicon with nitrogen or carbon, the nitrogen being introduced including in the form of an ammonia gas (NH₃), to form a silicon gate which includes the thin layer of silicon and the thick layer of silicon having the impurities; and

applying a protective screen oxide layer around the silicon gate stack, the impurities being introduced with a concentration, the impurities concentration and the thick layer thickness impeding an encroachment by the oxide layer into the silicon gate during application of the protective screen oxide layer around the silicon gate stack.

8. A method of forming a silicon gate stack over a silicon substrate of a semiconductor device, the method comprising the steps of:

growing an oxide layer over the silicon substrate;

depositing a thin layer of silicon in the absence of impurities to form a thin layer of silicon over the oxide layer;

depositing a thick layer of silicon over the thin layer of silicon in the absence of impurities, the thick layer having a greater thickness than the thin layer;

introducing impurities into only one of the thin layer or the thick layer of silicon to form a silicon gate which includes the thin layer of silicon and the thick layer of silicon one of which having the impurities, the impurities being introduced with a concentration; and

applying a protective screen oxide layer around the silicon gate stack, the impurities concentration and the thick layer thickness impeding an encroachment by the oxide layer into the silicon gate during application of the protective screen oxide layer around the silicon gate stack.