Method of manufacturing semiconductor monocrystalline mirror-surface wafers which includes a gas phase etching process, and semiconductor monocrystalline mirror-surface wafers manufactured by the method
First Claim
1. A method of manufacturing a semiconductor monocrystalline mirror-surface wafer comprising the steps of:
- slicing a semiconductor monocrystalline ingot so as to obtain a thin disk-shaped wafer;
chamfering the peripheral edge of the wafer obtained in the slicing step;
lapping the chamfered wafer so as to make the surface of the chamfered wafer flat;
performing etching so as to remove working damage remaining in the chamfered and lapped wafer surface;
subjecting the surface of the etched wafer to mirror-surface polishing;
subjecting the surface of the mirror-surface polished wafer to gas phase etching so as to flatten the surface of the wafer to a high degree; and
cleaning the wafer which has been mirror-surface polished and flattened to a high degree,wherein said mirror-surface polishing step is composed of coarse polishing and finishing polishing, and only the coarse polishing is performed prior to said gas phase etching step, while the finishing polishing is carried out after the gas phase etching step.
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Abstract
A method of manufacturing a semiconductor monocrystalline mirror-surface wafer includes at least a gas phase etching process and a mirror-surface polishing process. The mirror-surface polishing process is composed of coarse polishing and finishing polishing, and only the coarse polishing is performed prior to the gas phase etching process, while the finishing polishing is carried out after the gas phase etching process. In addition, a heat treatment process is performed after the gas phase etching process but before the final cleaning process. The heat treatment process also serves as a donor-annihilation heat treatment process. The method can manufacture semiconductor monocrystalline mirror-surface wafers having a high degree of flatness, while resolving the problems involved in the conventional method; i.e., haze produced on a wafer surface, the introduction of strain and defects in the surface, high cost, and low productivity.
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Citations
10 Claims
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1. A method of manufacturing a semiconductor monocrystalline mirror-surface wafer comprising the steps of:
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slicing a semiconductor monocrystalline ingot so as to obtain a thin disk-shaped wafer; chamfering the peripheral edge of the wafer obtained in the slicing step; lapping the chamfered wafer so as to make the surface of the chamfered wafer flat; performing etching so as to remove working damage remaining in the chamfered and lapped wafer surface; subjecting the surface of the etched wafer to mirror-surface polishing; subjecting the surface of the mirror-surface polished wafer to gas phase etching so as to flatten the surface of the wafer to a high degree; and cleaning the wafer which has been mirror-surface polished and flattened to a high degree, wherein said mirror-surface polishing step is composed of coarse polishing and finishing polishing, and only the coarse polishing is performed prior to said gas phase etching step, while the finishing polishing is carried out after the gas phase etching step. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification
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- Resources
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Current AssigneeShin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
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Original AssigneeShin-Etsu Handotai Co., Ltd. (Shin-Etsu Chemical Company Limited)
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InventorsOishi, Hiroshi
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Primary Examiner(s)Kunemund, Robert
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Assistant Examiner(s)CHAMPAGNE, DONALD
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Application NumberUS08/824,176Time in Patent Office958 DaysField of Search438/719, 438/460, 438/706, 438/691, 438/692, 438/693, 438/715, 438/974, 216/52, 216/58, 216/79US Class Current438/691CPC Class CodesC30B 33/00 After-treatment of single c...H01L 21/02008 Multistep processesY10S 438/974 Substrate surface preparation
