Epitaxial wafer for AlGaInP light-emitting diode

• US 5,981,976 A
• Filed: 12/04/1997
• Issued: 11/09/1999
• Est. Priority Date: 12/05/1996
• Status: Expired due to Term

• Current Assignee: Showa Denko KK
• Original Assignee: Showa Denko KK
• Inventors: Murasato, Shigetaka
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US08/985,199
• Time in Patent Office: 705 Days
• Field of Search: 257/94
• US Class Current: 257/94
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table

Abstract

An epitaxial wafer for an AlGaInP light-emitting device includes a p-type GaAs substrate, a reflection layer in the form of a laminated body of multiple semiconductor layers provided over the substrate, a double hetero-junction light-emitting structure of AlGaInP formed over the reflection layer, the light-emitting structure including an active layer between upper and lower cladding layers, and a current diffusion layer of AlGaAs provided over the double hetero-junction light-emitting structure. The current diffusion layer is transparent to light emitted by the light-emitting structure. The current diffusion layer is n-type AlGaAs, and has a carrier concentration of from 10¹⁷ cm^-3 to 2×10¹⁹ cm^-3, and a thickness that is not more than 1 μm.

Claims

1. An epitaxial wafer for an AlGaInP light-emitting diode, comprising:

a p-type GaAs substrate,

a reflection layer comprised of a lamination of multiple semiconductor layers provided over the substrate,

a double hetero-junction light-emitting structure of AlGaInP provided over the reflection layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers,

a current diffusion layer of n-type AlGaAs provided over the double hetero-junction light-emitting structure, said current diffusion layer being transparent to light emitted by the light-emitting structure and having a carrier concentration of not less than 10¹⁷ cm^-3 and a thickness of not more than 1 μ

m, and

a protective layer provided over the current diffusion layer, said protective layer being transparent to light emitted by the light-emitting structure and having a thickness up to 0.5 μ

m.

2. An epitaxial wafer according to claim 1, wherein the protective layer is formed of AlGaInP.

3. An epitaxial wafer according to claim 1, wherein the protective layer is formed of GaP.

4. An epitaxial wafer according to claim 1, wherein at room temperature lattice mismatch between the layers constituting the double hetero-junction light-emitting structure and the GaAs substrate is from 0.085% to less than 0.140%.

5. An epitaxial wafer according to claim 1, wherein the layers constituting the double hetero-junction light-emitting structure and the GaAs substrate are lattice matched at epitaxial growth temperature.

11. An epitaxial wafer according to claim 1, wherein the current diffusion layer and the protective layer have a total thickness of not more than 1 μ

m.

12. An epitaxial wafer according to claim 11, wherein the protective layer is formed of AlGaInP.

13. An epitaxial wafer according to claim 11, wherein the protective layer is formed of GaP.

6. An AlGaInP light-emitting diode, comprising:

a p-type GaAs substrate,

a p-type ohmic electrode provided on a back surface of the substrate,

a reflection layer comprised of a lamination of multiple semiconductor layers provided over the substrate,

a double-hetero-junction light-emitting structure of AlGaInP provided over the reflection layer, said light-emitting structure being comprised of an active layer between upper and lower cladding layers,

a current diffusion layer of n-type AlGaAs provided over the double hetero-junction light-emitting structure, said current diffusion layer being transparent to light emitted by the light-emitting structure and having a carrier concentration of not less than 10¹⁷ cm^-3 and not more than 2×

10¹⁹ cm^-3 and a thickness of not more than 1 μ

m,

a protective layer provided over the current diffusion layer, said protective layer being transparent to light emitted by the light-emitting structure and having a thickness up to 0.5 μ

m, and

an n-type ohmic electrode provided on the AlGaAs current diffusion layer.

7. A light-emitting diode according to claim 6, wherein the protective layer is formed of AlGaInP.

8. A light-emitting diode according to claim 6, wherein the protective layer is formed of GaP.

9. A light-emitting diode according to claim 6, wherein at room temperature lattice mismatch between the layers constituting the double hetero-junction light-emitting structure and the GaAs substrate is from 0.085% to less than 0.140%.

10. A light-emitting diode according to claim 6, wherein the layers constituting the double hetero-junction light-emitting structure and the GaAs substrate are lattice matched at epitaxial growth temperature.

14. An AlGaInP light-emitting diode according to claim 6, wherein the current diffusion layer and the protective layer have a total thickness of not more than 1 μ

m.

15. An AlGaInP light-emitting diode according to claim 14, wherein the protective layer is formed of AlGaInP.

16. An AlGaInP light-emitting diode according to claim 14, wherein the protective layer is formed of GaP.