×

Memory device

  • US 5,982,661 A
  • Filed: 02/10/1999
  • Issued: 11/09/1999
  • Est. Priority Date: 07/31/1998
  • Status: Expired due to Term
First Claim
Patent Images

1. A non-volatile memory comprising a plurality of floating gate-type memory cells, comprising:

  • a plurality of normal memory blocks comprising said memory cells;

    a boot memory block comprising said memory cells;

    a block decoder which is supplied a block selection address and which selects said plurality of normal memory blocks and boot memory block;

    an address supply portion for inverting or not inverting the block selection address supplied to said block decoder depending on a function setting bit; and

    function setting memory for storing said function setting bit;

    wherein said function setting memory comprises;

    a first and second floating gate MOS transistor which are electrically written and erased and which are operatively connected between power sources serially; and

    an output terminal connected to the contact point of said first and second MOS transistors;

    wherein a first datum is stored by writing to said first MOS transistor and erasing said second MOS transistor, and a second datum is stored by erasing said first MOS transistor and writing to said second MOS transistor.

View all claims
  • 9 Assignments
Timeline View
Assignment View
    ×
    ×