Acoustic transducers and method of microfabrication

• US 5,982,709 A
• Filed: 03/31/1998
• Issued: 11/09/1999
• Est. Priority Date: 03/31/1998
• Status: Expired due to Term

• Current Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Original Assignee: Board of Trustees of the Leland Stanford Junior University (Stanford University)
• Inventors: Jin, Xuecheng, Khuri-Yakub, Butrus T., Ladabaum, Igal
• Primary Examiner(s): Lobo, Ian J.
• Application Number:
  US09/052,818
• Time in Patent Office: 588 Days
• Field of Search: 367/170, 367/173, 367/174, 367/163, 367/165, 381/169, 381/174, 381/205
• US Class Current: 367/170
• CPC Class Codes: H10N 30/2047 Membrane type

Abstract

There is provided an acoustic transducer which includes a membrane of selected size and shape supported at its edges spaced from a first conductive electrode by an integral support structure with the second conductive electrode comprising a thin metal film on the membrane. The active membrane area is undisturbed by etch vias.

Claims

1. An acoustic transducer comprising a silicon substrate forming a first electrode, a membrane of selected shape supported at its edges spaced from said substrate by an integral support structure of the same material as the membrane, and a conductive film is carried by said membrane to form a second electrode of said acoustic transducer characterized in that the support structure includes reservoirs and tortuous channels communicating between the reservoirs and the space between the substrate and the membrane.

2. An acoustic transducer as in claim 1 in which said membrane and support structure are silicon nitride.

3. An acoustic transducer as in claim 1 in which said membrane and integral support structures are polysilicon and a silicon nitride layer is interposed between said support structure and said silicon substrate.

4. An acoustic transducer as in claim 2 in which said silicon nitride support supports the membrane directly on said silicon substrate.

5. An acoustic transducer as in claim 1, 2, 3 or 4 which includes a plurality of silicon nitride membranes of selected size and shape.

6. An acoustic transducer as in claim 1, 2, 3 or 4 in which the reservoirs and channels are sealed to seal the space between the substrate and the membrane to form a sealed cavity whereby the transducer can be immersed in a liquid.

7. An acoustic transducer as in claim 5 in which the support structure includes a plurality of spaced posts each including tortuous channels and a reservoir.

8. An acoustic transducer as in claim 1 including a plurality of spaced support posts spaced from the edge support structure to provide a dual mode transducer.

9. An acoustic transducer as in claim 8 in which the support posts include a reservoir and tortuous channels.