Methods and apparatus for a cleaning process in a high temperature, corrosive, plasma environment
First Claim
1. A process for cleaning unwanted deposits formed, at a process temperature, on surfaces in a processing chamber of the type having a heater and a showerhead spaced-apart from said heater, said process comprising:
- maintaining said heater at said process temperature;
reducing thermal communication between said heater and said showerhead subsequent to formation of said unwanted deposits;
introducing a chlorine-containing gas into said chamber; and
applying RF energy to provide a plasma in said processing chamber.
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Accused Products
Abstract
The present invention provides systems, methods and apparatus for depositing titanium films at rates up to 200 Å/minute on semiconductor substrates from a titanium tetrachloride source. In accordance with an embodiment of the invention, a ceramic heater assembly with an integrated RF plane for bottom powered RF capability allows PECVD deposition at a temperature of at least 400° C. for more efficient plasma treatment. A thermal choke isolates the heater from its support shaft, reducing the thermal gradient across the heater to reduce the risk of breakage and improving temperature uniformity of the heater. A deposition system incorporates a flow restrictor ring and other features that allow a 15 liters/minute flow rate through the chamber with minimal backside deposition and minimized deposition on the bottom of the chamber, thereby reducing the frequency of chamber cleanings, and reducing clean time and seasoning. Deposition and clean processes are also further embodiments of the present invention.
150 Citations
27 Claims
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1. A process for cleaning unwanted deposits formed, at a process temperature, on surfaces in a processing chamber of the type having a heater and a showerhead spaced-apart from said heater, said process comprising:
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maintaining said heater at said process temperature; reducing thermal communication between said heater and said showerhead subsequent to formation of said unwanted deposits; introducing a chlorine-containing gas into said chamber; and applying RF energy to provide a plasma in said processing chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 27)
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16. A substrate processing apparatus comprising:
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a chamber having a chamber volume and a showerhead disposed within said chamber volume; a gas delivery system in fluid communication with said chamber, said gas delivery system including a plurality of gas sources, a supply of chlorine gas and a supply of plasma-assisting gas; a heating system comprising a heater pedestal with said heater pedestal being disposed within said chamber volume and spaced-apart from said showerhead; a plasma system in electrical communication with said chamber and comprising an RF generator and an RF plane; a vacuum system in fluid communication with said chamber; and a control system in data communication with said heating system, vacuum system, gas delivery system and plasma system comprising a processor and a memory comprising a computer-readable medium having a computer-readable program embodied therein, coupled to said processor, said computer-readable program comprising; (i) a first set of instructions for controlling said heating system and said vacuum system to maintain said heater pedestal at a first temperature while reducing thermal communication between said showerhead and said heater, (ii) a second set of instructions for controlling said gas delivery system to deliver said chlorine gas at a first flow rate and to deliver said plasma-assisting gas, and (iii) a third set of instructions for controlling said plasma system to form said plasma from said chlorine gas and said plasma-assisting gas to clean unwanted deposits from a deposition process performed in said chamber. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23)
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24. A substrate processing apparatus of the type having a chamber and a heater and a showerhead, spaced-apart from said heater, said apparatus comprising:
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means, in communication with said heater, for maintaining said heater at a process temperature; means, connected to said apparatus, for reducing thermal communication between said heater and said showerhead; means for monitoring and controlling said means for reducing thermal communication; means, in fluid communication with said chamber, for introducing a chlorine-containing gas into said chamber; and means, in electrical communication with said chamber, for applying RF energy to provide a plasma in said chamber. - View Dependent Claims (25, 26)
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Specification