Method of characterizing linewidth errors in a scanning lithography system

• US 5,985,498 A
• Filed: 03/01/1999
• Issued: 11/16/1999
• Est. Priority Date: 03/01/1999
• Status: Expired due to Fees

• Current Assignee: Advanced Micro Devices, Inc.
• Original Assignee: Advanced Micro Devices, Inc.
• Inventors: Minvielle, Anna M., Levinson, Harry, Nguyen, Khanh B.
• Primary Examiner(s): Young, Christopher G.
• Application Number:
  US09/259,928
• Time in Patent Office: 260 Days
• Field of Search: 430/30
• US Class Current: 430/30
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Abstract

A method of characterizing linewidth errors in a lithography system 30 used to delineate a desired pattern onto an exposure site of a wafer 32. The pattern of a reticle 34 is transferred onto an exposure site 56 of a wafer 32 by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens. The exposure site 56 is conceptually divided into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to perpendicular intersections of the lines may each be assigned a pair of coordinates (x,y). The linewidths of the pattern are measured for each of the points (x,y) and a linewidth error value ERROR (x,y) is generated for each of the points (x,y). An ERROR_optical (y) value for each y coordinate is calculated by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate. In this manner, the contribution of optical aberrations to linewidth errors may be determined.

Claims

1. A method of characterizing linewidth errors in a lithography system used to delineate a desired pattern onto an exposure site of a wafer, said method comprising the steps of:

providing a reticle having a pattern;

delineating the pattern onto an exposure site of a wafer by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens;

conceptually dividing the exposure site into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to intersections of the lines may each be assigned a pair of coordinates (x,y);

measuring linewidths of the portion of the pattern at each of the points (x,y);

generating a linewidth error value ERROR (x,y) for each of the points (x,y);

calculating an ERROR_optical (y) value for each y coordinate by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate to determine the contribution of optical aberrations to linewidth errors.

2. A method as set forth in claim 1 wherein the series of lines extending in the scan direction x are substantially parallel to each other and the series of lines extending in the slit direction y are substantially parallel to each other.

3. A method as set forth in claim 2 wherein the series of lines extending in the scan direction x are substantially perpendicular to the slit direction y.

4. A method as set forth in claim 1 wherein said generating step comprises:

comparing each of the measured linewidths to a target value to generate a value E(x,y) for each point (x,y);

averaging the values E(x,y) to provide an E_average value;

subtracting the E_average value from each E(x,y) value to generate the linewidth error values ERROR(x,y).

5. A method as set forth in claim 4 further comprising the steps of generating an ERROR_other (x,y) value for each of the points (x,y) by subtracting the corresponding the ERROR_optical (y) value from the ERROR(x,y) value.

6. A method as set forth in claim 5 further comprising the step of calculating an ERROR_scan (x) value for each x coordinate by averaging the ERROR_other (xy) values for each group of points (x,y) having a common x coordinate to determine the contribution of scanning errors to linewidth errors.

7. A method as set forth in claim 6 wherein said reticle-providing step comprises providing a test reticle designed so that a feature of the pattern will be substantially centrally positioned within at least a majority of the plurality of the points (x,y).

8. A method as set forth in claim 7 wherein the pattern comprises a series of lines extending in either the scan direction x or the slit direction y.

9. A method as set forth in claim 8 wherein the lines have a width corresponding to 1 μ

m design features.

10. A method as set forth in claim 8 wherein the series of lines extend in the slit direction y.

11. A method as set forth in claim 10 wherein the lines have a width corresponding to 1 μ

m design features.

12. A method as set forth in claim 1 wherein said reticle-providing step comprises providing a test reticle designed so that a feature of the pattern will be substantially centrally positioned within at least a majority of the plurality of the points (x,y).

13. A method as set forth in claim 12 wherein the pattern comprises a series of lines extending in either the scan direction x or the slit direction y.

14. A method as set forth in claim 13 wherein the lines have a width corresponding to 1 μ

m or less design features.

15. A method as set forth in claim 13 wherein the series of lines extend in the slit direction y.

16. A method as set forth in claim 15 wherein the lines have a width corresponding to 1 μ

m or less design features.

17. A method as set forth in claim 1 wherein said delineating step comprises using reduction optics whereby the pattern on the reticle is an enlarged version of the pattern delineated onto the wafer and whereby the reticle is scanned at a faster rate than the wafer.

18. A method as set forth in claim 16 wherein the reduction optics introduces a 4:

1 demagnification factor and the reticle is scanned at a rate four times faster than the wafer.

19. A method as set forth in claim 17 wherein said delineating step comprises using reflective optics whereby the slit of light is in the form of an arcuate ring concentric with a reflective axis.

20. A method as set forth in claim 1 wherein said delineating step comprises using reflective optics whereby the slit of light is in the form of an arcuate ring concentric with a reflective axis.