×

Method of forming a capacitor of a semiconductor device

  • US 5,985,730 A
  • Filed: 06/11/1998
  • Issued: 11/16/1999
  • Est. Priority Date: 06/11/1997
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of forming a capacitor of a semiconductor device comprising steps of:

  • providing a semiconductor substrate;

    forming a charge storage electrode on the top of said semiconductor substrate;

    nitrifying an entire surface of said charge storage electrode;

    plasma-treating and oxidizing a surface of said nitrified charge storage electrode;

    depositing a Ta2 O5 film on said charge storage electrode surface by LPCVD method and plasma treating a Ta2 O5 film, wherein the process of depositing and plasma treating of a Ta2 O5 film is carried out at least one if not more times;

    thermally treating said Ta2 O5 film; and

    forming a plate electrode on the top of said entire surface.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×