Method of forming a via hole structure including CVD tungsten silicide barrier layer

• US 5,985,749 A
• Filed: 06/25/1997
• Issued: 11/16/1999
• Est. Priority Date: 06/25/1997
• Status: Expired due to Term

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: VLSI Technology, Inc. (Koninklijke Philips N.V.)
• Inventors: Lin, Xi-Wei, Bothra, Subhas
• Primary Examiner(s): QUACH, TUAN N
• Application Number:
  US08/881,614
• Time in Patent Office: 874 Days
• Field of Search: 438/623, 438/627, 438/628, 438/629, 438/630, 438/637, 438/649, 438/643, 438/644, 438/655, 438/653, 438/624, 438/639, 438/680, 257/759, 257/757, 257/763
• US Class Current: 438/623
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric

Abstract

The invention relates to integrated circuits and to via hole structures which include a tungsten silicide barrier layer and to methods of forming such via hole structures. In an exemplary embodiment, a metal layer is formed on a sidewall and a bottom surface of the via hole, a WSi_x barrier layer is formed on the first metal layer by chemical vapor deposition and the via hole is subsequently filled with a metal. The tungsten silicide barrier layer effectively suppresses device degradation resulting from the release of gaseous species from the sidewall of the via hole during plug formation. Semiconductor devices can thus be fabricated which are immune or less susceptible to metal open failures due to incomplete via filling.

Claims

1. A method of forming a via hole structure in a semiconductor device, comprising the steps of:

(a) forming one or more dielectric layers over a substrate surface comprising an aluminum or aluminum alloy metal pattern;

(b) depositing a spin-on-glass layer over the one or more dielectric layers;

(c) forming one or more additional dielectric layers over the spin-on-glass layer;

(d) forming a via hole through the one or more additional dielectric layers, the spin-on-glass layer and the one or more dielectric layers, the via hole extending to a top surface of the aluminum or aluminum alloy metal pattern and being bounded by a sidewall comprising the one or more dielectric layers, the spin-on-glass layer and the one or more additional dielectric layers;

(e) forming a titaniurn layer, a titanium nitride layer or a titanium/titanium nitride bilayer on the sidewall and on the aluminum or aluminum alloy metal pattern within the via hole, said layer having a thickness of from about 100 to 2000 Å

;

(f) depositing a tungsten silicide layer on the layer formed in step (e), the tungsten silicide layer being formed by chemical vapor deposition and having a thickness of from about 50 to 700 Å

; and

filling the via hole with tungsten by depositing tungsten on the tungsten silicide, the tungsten silicide layer suppresses outgassing of the spin-on-glass layer during deposition of the tungsten.

2. The method according to claim 1, wherein the titanium layer, the titanium nitride layer or the titanium/titanium nitride bilayer of step (e) is deposited by physical vapor deposition.

3. The method according to claim 2, wherein or the layer of step (e) is a titanium nitride layer.

4. The method according to claim 2, wherein the layer of step (e) is a titanium/titanium nitride bilayer.

5. The method according to claim 1, wherein the titanium layer, the titanium nitride layer or the titanium/titanium nitride bilayer of step (e) has a thickness of from about 300 to 700 Å

.

6. The method according to claim 1, wherein the tungsten silicide chemical vapor deposition comprises reacting silane with tungsten hexafluoride.

7. The method according to claim 6, wherein the ratio of silane flowrate to tungsten hexafluoride flowrate during the tungsten silicide chemical vapor deposition is from 2:

1 to 3;

1.

8. The method according to claim 1, wherein during the tungsten silicide layer deposition, the substrate being treated is heated to a temperature from about 350 to 450°

C.

9. The method according to claim 1, wherein the tungsten silicide layer is deposited with a thickness of from about 50 to 500 Å

.

10. The method according to claim 1. wherein the tungsten is deposited by chemical vapor deposition.

11. The method according to claim 1, wherein the tungsten is deposited in the same processing chamber as the tungsten silicide layer.