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Method of forming a via hole structure including CVD tungsten silicide barrier layer

  • US 5,985,749 A
  • Filed: 06/25/1997
  • Issued: 11/16/1999
  • Est. Priority Date: 06/25/1997
  • Status: Expired due to Term
First Claim
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1. A method of forming a via hole structure in a semiconductor device, comprising the steps of:

  • (a) forming one or more dielectric layers over a substrate surface comprising an aluminum or aluminum alloy metal pattern;

    (b) depositing a spin-on-glass layer over the one or more dielectric layers;

    (c) forming one or more additional dielectric layers over the spin-on-glass layer;

    (d) forming a via hole through the one or more additional dielectric layers, the spin-on-glass layer and the one or more dielectric layers, the via hole extending to a top surface of the aluminum or aluminum alloy metal pattern and being bounded by a sidewall comprising the one or more dielectric layers, the spin-on-glass layer and the one or more additional dielectric layers;

    (e) forming a titaniurn layer, a titanium nitride layer or a titanium/titanium nitride bilayer on the sidewall and on the aluminum or aluminum alloy metal pattern within the via hole, said layer having a thickness of from about 100 to 2000 Å

    ;

    (f) depositing a tungsten silicide layer on the layer formed in step (e), the tungsten silicide layer being formed by chemical vapor deposition and having a thickness of from about 50 to 700 Å

    ; and

    filling the via hole with tungsten by depositing tungsten on the tungsten silicide, the tungsten silicide layer suppresses outgassing of the spin-on-glass layer during deposition of the tungsten.

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