High-frequency bipolar transistor structure

• US 5,986,323 A
• Filed: 10/27/1995
• Issued: 11/16/1999
• Est. Priority Date: 10/28/1994
• Status: Expired due to Term

• Current Assignee: Consorzio Per Il Sistema Informativo Csi Piemonte
• Original Assignee: Consorzio Per Il Sistema Informativo Csi Piemonte
• Inventors: Zambrano, Raffaele, Fallico, Giuseppe
• Primary Examiner(s): Saadat, Mahshid
• Assistant Examiner(s): Wilson, Allan R.
• Application Number:
  US08/549,267
• Time in Patent Office: 1,481 Days
• Field of Search: 257/290, 257/281, 257/443, 257/448, 257/576, 257/587, 257/588
• US Class Current: 257/576
• CPC Class Codes: H01L 29/1004 Base region of bipolar transistors
• CPC Class Codes: H01L 29/42304 Base electrodes for bipolar transistors
• CPC Class Codes: H01L 29/66272 Silicon vertical transistors H01L29/66242, H01L29/66257 and H01L29/66265 take precedence

Abstract

A high-frequency bipolar transistor structure includes a base region of a first conductivity type formed in a silicon layer of a second conductivity type, the base region comprising an intrinsic base region surrounded by an extrinsic base region, an emitter region of the second conductivity type formed inside the intrinsic base region, the extrinsic base region and the emitter region being contacted by a first polysilicon layer and a second polysilicon layer respectively. The first and the second polysilicon layers are respectively contacted by a base metal electrode and an emitter metal electrode. Between the extrinsic base region and the first polysilicon layer, a silicide layer is provided to reduce the extrinsic base resistance of the bipolar transistor.

Claims

1. High-frequency bipolar transistor structure, comprising a base region of a first conductivity type formed in a silicon layer of a second conductivity type such that at least a portion of the base region is positioned lower in the structure than an upper surface of the silicon layer of the second conductivity type, said base region comprising an intrinsic base region having a first doping concentration surrounded by an extrinsic base region having a second doping concentration which is different than the first doping concentration, an emitter region of the second conductivity type formed inside said intrinsic base region, the extrinsic base region and the emitter region being contacted by a first polysilicon layer and by a second polysilicon layer, respectively, the first and second polysilicon layers being respectively contacted by a base metal electrode and by an emitter metal electrode, a silicide layer being provided between said extrinsic base region and said first polysilicon layer to reduce the extrinsic base resistance of the bipolar transistor, wherein said extrinsic base region is shallower than said intrinsic base region, and wherein at least a portion of said silicide layer is positioned lower in the structure than an upper surface of said intrinsic base region.

2. High-frequency bipolar transistor structure according to claim 1, wherein said silicide layer is a cobalt silicide layer.

3. High-frequency bipolar transistor structure according to claim 1, said extrinsic base region being surrounded by a thick field oxide region and the first polysilicon layer extending over said field oxide region, wherein the silicide layer also extends over the field oxide region.

4. High-frequency bipolar transistor structure according to claim 3, wherein said silicide layer is a titanium silicide layer.

5. High-frequency bipolar transistor structure according to claim 1, the bipolar transistor being a component of an integrated circuit, wherein said silicon layer is a lightly doped layer superimposed over a heavily doped layer of the second conductivity type, superimposed in turn over a semiconductor substrate of the first conductivity type which forms a common substrate of the integrated circuit.

6. High-frequency bipolar transistor structure according to claim 1, the bipolar transistor being a discrete component, wherein said silicon layer is a lightly doped layer superimposed over a heavily doped semiconductor substrate of the second conductivity type.

15. The High-frequency bipolar transistor structure of claim 1, wherein the silicide layer is in physical contact with an upper surface of the extrinsic base region.

7. Bipolar transistor structure, comprising a base region of a first conductivity type formed in a silicon layer of a second conductivity type such that at least a portion of the base region is positioned lower in the structure than an upper surface of the silicon layer of the second conductivity type, said base region comprising an intrinsic base region having a first doping concentration surrounded by an extrinsic base region having a second doping concentration which is different than the first doping concentration, an emitter region of the second conductivity type formed inside said intrinsic base region, the extrinsic base region and the emitter region being coupled to a first polysilicon layer and a second polysilicon layer, respectively, and a silicide layer being provided between said extrinsic base region and said first polysilicon layer, wherein at least a portion of said silicide layer is positioned lower in the structure than an upper surface of said intrinsic base region.

8. The bipolar transistor structure of claim 7, wherein said extrinsic base region is shallower than said intrinsic base region.

9. The bipolar transistor structure of claim 7, wherein said silicide layer is a titanium silicide layer.

10. The bipolar transistor structure of claim 7, wherein said silicon layer is a lightly doped layer superimposed over a heavily doped layer of the second conductivity type.

11. The structure of claim 10, wherein the heavily doped layer of the second conductivity type is superimposed over a semiconductor substrate of the first conductivity type which forms a common substrate of an integrated circuit.

12. The bipolar transistor structure of claim 7, wherein the silicide layer is provided between said extrinsic base region and said first polysilicon layer to reduce the extrinsic base resistance of the bipolar transistor.

16. The bipolar transistor structure of claim 7, wherein the silicide layer is in physical contact with an upper surface of the extrinsic base region.

13. Semiconductor structure comprising a polysilicon layer, an epitaxial layer, an intrinsic base region formed in the epitaxial layer such that at least a portion of the intrinsic base region is positioned lower in the structure than an upper surface of the epitaxial layer, and a silicide layer, disposed between the polysilicon layer and the epitaxial layer so that dopants can diffuse from the polysilicon layer into the epitaxial layer via the silicide layer, wherein at least a portion of said silicide layer is positioned lower in the structure than an upper surface of said intrinsic base region.

14. The semiconductor structure of claim 13, further including an extrinsic base region surrounding the intrinsic base region, wherein at least a portion of the extrinsic base region is formed by the diffusion of dopants from the polysilicon layer into the epitaxial layer via the silicide layer, the extrinsic base region having a different doping concentration than the intrinsic base region.