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Microwave monolithic integrated circuit with coplaner waveguide having silicon-on-insulator composite substrate

  • US 5,986,331 A
  • Filed: 05/30/1996
  • Issued: 11/16/1999
  • Est. Priority Date: 05/30/1996
  • Status: Expired due to Fees
First Claim
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1. A microwave monolithic integrated circuit (MMIC) which includes a coplanar waveguide (CPW) for microwave radio frequency signals, said CPW having a signal conductor and a pair of ground planes spaced therefrom on either side thereof and extending substantially parallel to each other on the upper surface of a composite silicon-on-insulator (SOI) structure;

  • said SOI structure comprising;

    a monocrystalline silicon substrate having an upper surface which is oxidized to provide thereon an insulating layer of silicon dioxide;

    a layer of monocrystalline silicon of relatively low conductivity formed on said insulating layer and having an upper surface which is oxidized to provide thereon a thin layer of silicon dioxide which constitutes the upper surface of the SOI structure; and

    a diffused zone of relatively high conductivity formed in said silicon layer, said zone laterally extending therein under said signal conductor and up to each of said ground planes;

    whereby the electric component of a quasi-TEM microwave radio frequency signal traversing said CPW is bent upward into said silicon layer so as to reduce transmission loss due to penetration of said electric component into the silicon substrate.

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