Semiconductor device

• US 5,986,341 A
• Filed: 02/09/1998
• Issued: 11/16/1999
• Est. Priority Date: 05/18/1995
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi, Ltd.
• Inventors: Usami, Mitsuo, Miyazaki, Masaru, Tsubosaki, Kunihiro
• Primary Examiner(s): Clark, Sheila V.
• Application Number:
  US08/930,083
• Time in Patent Office: 645 Days
• Field of Search: 257/679, 257/678, 257/702, 257/723, 257/724
• US Class Current: 257/723
• CPC Class Codes: G06K 19/07728 the record carrier comprising means for protection against impact or bending, e.g. protective shells or stress-absorbing layers around the integrated circuit
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G06K 19/07779 the inductive antenna being a coil
• CPC Class Codes: G06K 19/07783 the coil being planar
• CPC Class Codes: G06K 19/07784 the inductive antenna consisting of a plurality of coils stacked on top of one another
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/5388 for flat cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01019 Potassium [K]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/07811 Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

A condenser, a coil and a thin-thickness integrated circuit are placed between an upper cover sheet and a lower cover sheet, and adhesive is filled into the space between them, whereby a card is fabricated. Because the condenser, the coil and the thin-thickness integrated circuit are extremely thin, the resulting semiconductor device is highly resistant to bending and highly reliable at a low cost.

Claims

1. A semiconductor device comprising:

a condenser chip having a thickness of 110 μ

m or less;

an integrated circuit chip having a thickness of 110 μ

m or less coupled with said condenser chip; and

first and second flexible substrates interposing said condenser chip and integrated circuit chip between them.

2. A semiconductor device according to claim 1, wherein said semiconductor device includes plural integrated circuit chips.

3. A semiconductor device according to claim 2, wherein said semiconductor device is a multi-chip module.

4. A semiconductor device according to claim 3, wherein said condenser chip includes a titanium oxide film as a dielectric film of the condenser.

5. A semiconductor device according to claim 4, wherein said condenser chip includes a titanium or platinum film as an electrode of said condenser.

6. A semiconductor device according to claim 1, wherein said condenser chip is coupled with a coil having a thickness of 110 μ

m or less.

7. A semiconductor device according to claim 6, wherein said coil is printed and disposed between said first and second substrates.

8. A semiconductor device according to claim 6, wherein said coil provides energy to said condenser chip.

9. A semiconductor device according to claim 1, wherein said semiconductor device is an IC card, and said first and second substrates are first and second IC card substrates, respectively.

10. A semiconductor device according to claim 9, wherein said condenser chip is connected with said first substrate by using a conductive paste.

11. A semiconductor device according to claim 9, wherein said condenser chip is strengthened by using a plate harder than said first and second substrates.

12. A semiconductor device according to claim 9, wherein said condenser chip is disposed inside a circle having a diameter equal to a length of a short side of the card and having a center placed at the center of the card.

13. A semiconductor device according to claim 9, wherein said condenser chip is disposed in said IC card so that a neutral plane of said IC card is positioned between an upper surface and a rear surface of said condenser chip.

14. A semiconductor device according to claim 9, wherein material of said first and second substrates is PET.

15. A semiconductor device according to claim 9, wherein said condenser chip is disposed in a region within 55 μ

m above and below a neutral plane of said IC card.

16. A semiconductor device according to claim 9, wherein a photograph of a holder of said IC card is disposed over said condenser chip.

17. A semiconductor device according to claim 9, wherein said IC card is a contact type card.

18. A semiconductor device comprising:

a flexible first substrate;

a condenser chip having a thickness of 110 μ

m or less and disposed over said first substrate connected therewith by using conductive paste;

an integrated circuit chip coupled with said condenser chip; and

a flexible second substrate disposed opposite to said first substrate so that said condenser chip and integrated circuit chip are disposed between said first and second substrates.

19. A semiconductor device comprising:

a condenser chip having a thickness of 110 μ

m or less;

an integrated circuit chip coupled with said condenser chip; and

flexible first and second substrates, and a thin plate harder than said first and second substrates so as to cover said condenser chip.

20. A semiconductor device comprising:

a condenser chip having a thickness of 110 μ

m or less;

an integrated circuit chip coupled with said condenser chip; and

first and second flexible substrates interposing said condenser chip and integrated circuit chip between them,

wherein said condenser chip is disposed in said semiconductor device so that a neutral plane of said semiconductor device is disposed between an upper surface and a lower surface of said condenser chip.

21. A semiconductor device according to claim 20, wherein said semiconductor device is an IC card, and said first and second substrates are first and second IC substrates, respectively.

22. A semiconductor device according to claim 21, wherein said condenser chip is strengthened by using a plate harder than said first and second substrates.

23. A semiconductor device according to claim 21, wherein material of said first and second substrates is PET.

24. A semiconductor device according to claim 21, wherein a photograph of a holder of said IC card is disposed over said condenser chip.

25. A semiconductor device according to claim 21, wherein said semiconductor device includes plural integrated circuit chips.

26. A semiconductor device according to claim 21, wherein said condenser chip includes a titanium oxide film as a dielectric film of the condenser.

27. A semiconductor device according to claim 21, wherein said condenser chip includes a titanium or platinum film as an electrode of the condenser.

28. A semiconductor device according to claim 21, wherein said condenser chip is coupled with a coil having a thickness not greater than 110 μ

m.

29. A semiconductor device according to claim 21, wherein said coil is printed and disposed between said first and second substrates.

30. A semiconductor device according to claim 21, wherein said coil provides energy to said condenser chip.

31. A semiconductor device comprising:

a condenser chip having a thickness not greater than 110 μ

m and including a circuit element portion and a condenser portion;

a coil of a thickness not greater than 110 μ

m which provides energy to said condenser portion; and

first and second substrates interposing said condenser chip and coil between them.

32. A semiconductor device according to claim 31, wherein said coil is printed.

33. A semiconductor device according to claim 31, wherein said semiconductor device is an IC card and said first and second substrates are a first IC substrate and a second IC substrate, respectively.

34. A semiconductor device according to claim 33, wherein material of said first and second substrates is PET.

35. A semiconductor device according to claim 33, wherein said condenser chip is disposed at a portion within 55 μ

m above and below a neutral plane of said IC card.

36. A semiconductor device including a circuit element portion and a condenser portion, wherein a condenser chip having a thickness not greater than 110 μ

m and first and second flexible substrates are disposed in said condenser portion so that said condenser chip is interposed between said first and second flexible substrates and is covered with a thin plate harder than said first and second flexible substrates.

37. A semiconductor device according to claim 36, wherein said semiconductor device is an IC card and said first and second flexible substrates are first and second card substrates, respectively.

38. A semiconductor device according to claim 36, wherein material of said first and second card substrates is PET.

39. A semiconductor device according to claim 36, wherein said condenser chip is disposed at a portion within 55 μ

m above and below a neutral plane of said IC card.

40. A semiconductor device according to claim 36, wherein said condenser chip is coupled with a coil having a thickness not greater than 110 μ

m.

41. A semiconductor device according to claim 40, wherein said coil is printed.

42. A semiconductor device according to claim 40, wherein said coil provides energy to said condenser chip.

43. A semiconductor device according to claim 36, wherein said thin plate is selectively disposed in a predetermined portion of said IC card.

44. A semiconductor device comprising:

a condenser chip having a thickness not greater than 110 μ

m and having a circuit element portion and a condenser portion;

first and second substrates interposing said condenser chip between them; and

a photograph disposed over at least one of said first and second flexible substrates.

45. A semiconductor device according to claim 44, wherein said semiconductor device is an IC card.

46. A semiconductor device according to claim 45, wherein material of said first and second card substrates is PET.

47. A semiconductor device according to claim 45, wherein said condenser chip is disposed at a portion within 55 μ

m above and below a neutral plane of said IC card.

48. A semiconductor device according to claim 45, wherein said condenser chip is coupled with a coil having a thickness not greater than 110 μ

m.

49. A semiconductor device according to claim 48, wherein said coil is printed and disposed between said first and second card substrates.

50. A semiconductor device according to claim 48, wherein said coil provides energy to said condenser chip.

51. A semiconductor device according to claim 45, wherein said thin plate is partially formed in said IC card.

52. A semiconductor device comprising:

a condenser chip having a thickness not greater than 110 μ

m and including a circuit element portion and a condenser portion;

a coil having a thickness of 110 μ

m or less and providing energy to said condenser portion; and

first and second flexible substrates interposing said condenser chip and coil between them,

wherein a neutral plane of said semiconductor device is positioned between upper and lower surfaces of said condenser chip.

53. A semiconductor device comprising:

a condenser chip having a thickness not greater than 110 μ

m and including a circuit element portion and a condenser portion;

first and second flexible substrates interposing said condenser chip between them; and

a thin plate harder than said first and second flexible substrates,

wherein a neutral plane of said semiconductor device is positioned between upper and lower surfaces of said condenser chip.

54. A semiconductor device comprising:

a condenser chip having a thickness not greater than 110 μ

m and including a circuit element portion and a condenser portion;

first and second flexible substrates interposing said condenser chip between them; and

a photograph disposed over a portion of a surface of at least one of said first and second flexible substrates,

wherein said portion is located at a position which corresponds to a position of said condenser chip, and wherein said condenser chip is disposed in said semiconductor device such that a neutral plane of said semiconductor device is positioned between upper and lower surfaces of said condenser chip.

55. A semiconductor device comprising:

an integrated circuit chip having a thickness of 110 μ

m or less;

a coil which is coupled with a thin-thickness condenser, said coil and said thin-thickness condenser having a thickness of 110 μ

m or less; and

first and second flexible substrates interposing said integrated circuit chip, said coil, and said thin-thickness condenser between them.