Semiconductor device drive circuit with voltage surge suppression

• US 5,986,484 A
• Filed: 07/02/1997
• Issued: 11/16/1999
• Est. Priority Date: 07/05/1996
• Status: Expired due to Term

• Current Assignee: The Source Recovery Company LLC
• Original Assignee: Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Kimata, Masahiro
• Primary Examiner(s): Wells, Kenneth B.
• Application Number:
  US08/887,082
• Time in Patent Office: 867 Days
• Field of Search: 327/108-112, 327/434, 327/436, 327/437, 323/284, 323/285, 323/908, 361/18, 361/56, 361/91
• US Class Current: 327/108
• CPC Class Codes: H03K 17/0828 in composite switches
• CPC Class Codes: H03K 17/168 in composite switches
• CPC Class Codes: Y10S 323/908 Inrush current limiters

Abstract

A semiconductor device drive circuit comprises first drive means for driving an IGBT, second drive means for driving the IGBT at lower speed than the first drive means, switch means for switching output of the first drive means and output of the second drive means for supply to a gate of the IGBT, and current decrease start point detection means for detecting a current decrease start point when a transition is made from a first period in which change in a collector current is moderate to a second period in which change in the collector current is abrupt when the IGBT is turned off. The switch means is operated so as to use the first drive means in the first period and the second drive means in the second period in response to output of the current decrease start point detection means.

Claims

1. A semiconductor device driving circuit being connected to a control electrode of an insulated gate bipolar transistor for controlling a conduction state between main electrodes thereof in response to a voltage applied to the control electrode, said semiconductor device drive circuit comprising:

driving control means for driving the insulated gate bipolar transistor at higher driving speed and lower driving speed, the output of the driving means being supplied to the control electrode of the insulated gate bipolar transistor for controlling a conduction state; and

current decrease start point detection means, connected to said driving control means, for detecting a current decrease start point when a transition is made from a first period in which change in a current flowing into the main electrodes is at a first level to a second period in which a change in current is at a second higher level when a voltage of the control electrode is lowered for making a transition from a conduction state to a non-conduction state between the main electrodes;

wherein said driving control means outputs at the higher driving speed in the first period and outputs at lower the driving speed in the second period in response to output of said current decrease start point detection means.

2. The semiconductor device driving circuit as claimed in claim 1, wherein said driving control means comprises:

first drive means for driving the insulated gate bipolar transistor;

second drive means for driving the insulated gate bipolar transistor at lower speed than said first drive means;

switching signal generation means for supplying a signal to said first drive means and said second drive means; and

switch means for an switching an output of said first drive means and output of said second drive means for supply to an the control electrode;

wherein said switch means is operated so as to use said first drive means in the first period and said second drive means in the second period in response to output of said current decrease start point detection means.

3. The semiconductor device driving circuit as claimed in claim 1, wherein said driving control means comprises:

an on-DC voltage source for supplying an on voltage to the control electrode;

an off-DC voltage source for supplying an off voltage to the control electrode;

on/off switch means for switching said on-DC voltage source and said off-DC voltage source;

switching signal generation means for supplying a signal to said on/off switch means;

a first gate resistor being connected to said on/off switch means;

a second gate resistor being connected to said on/off switch means and having a resistance value larger than said first gate resistor; and

switch means for switching said first gate resistor and said second gate resistor for connection to the control electrode;

wherein said switch means is operated so as to use said first gate resistor in the first period and said second gate resistor in the second period in response to output of said current decrease start point detection means.

4. The semiconductor device driving circuit as claimed in claim 1, wherein said driving control means comprises:

an on-DC voltage source for supplying an on voltage to the control electrode;

a first off-DC voltage source for supplying an off voltage to the control electrode;

a second off-DC voltage source for supplying an off voltage to the control electrode and having a voltage smaller than said first off-DC voltage source;

switch means for switching said first off-DC voltage source and said second off-DC voltage source;

on/off switch means for switching said on-DC voltage source and output of said switch means, switching signal generation means for supplying a signal to said on/off switch means; and

a gate resistor being connected between said on/off switch means and the control electrode;

wherein said switch means is operated so as to use said first off-DC voltage source in the first period and said second off-DC voltage source in the second period in response to output of said current decrease start point detection means.

5. The semiconductor device driving circuit as claimed in claim 1, wherein said driving control means comprises:

an on-DC current source for causing a current to flow into the control electrode;

a first off-DC current source for drawing out a current from the control electrode;

a second off-DC current source for drawing out a current from the control electrode and having a current value smaller than said first off-DC current source;

switch means for switching said first off-DC current source and said second off-DC current source;

on/off switch means for switching output of said on-DC current source and output of said switch means; and

switching signal generation means for supplying a signal to said on/off switch means;

wherein said switch means is operated so as to use said first off-DC current source in the first period and said second off-DC current source in the second period in response to output of said current decrease start point detection means.

6. The semiconductor device driving circuit as claimed in claim 1, wherein said driving control means comprises:

an on-DC voltage source for supplying an on voltage to the control electrode;

an off-DC voltage source for supplying an off voltage to the control electrode;

on/off switch means for switching said on-DC voltage source and said off-DC voltage source;

switching signal generation means for supplying a signal to said on/off switch means;

a gate resistor being connected between said on/off switch means and the control electrode;

switch means being connected to the control electrode;

a capacitor being connected between said switch means and one end of the main electrode; and

voltage adjustment means being connected to said switch means in parallel;

wherein said switch means is operated so that the control electrode and said capacitor are connected in the second period in response to output of said current decrease start point detection means.

7. The semiconductor device drive circuit as claimed in claim 1 wherein said current decrease start point detection means comprises means for detecting a voltage of the control electrode of the insulated gate bipolar transistor, a reference voltage source, and means for comparing output of said voltage detection means with output of said reference voltage source.

8. The semiconductor device drive circuit as claimed in claim 1 wherein said current decrease start point detection means comprises means for detecting a current flowing through the control electrode of the insulated gate bipolar transistor, a reference voltage source, and means for comparing output of said current detection means with output of said reference voltage source.

9. The semiconductor device drive circuit as claimed in claim 1 wherein said current decrease start point detection means comprises means for detecting a voltage of the control electrode of the insulated gate bipolar transistor, means for differentiating an output of said voltage detection means, a reference voltage source, and means for comparing an output of said differentiation means with an output of said reference voltage source.

10. The semiconductor device drive circuit as claimed in claim 1 wherein said current decrease start point detection means comprises means for detecting a current flowing through the control electrode of the insulated gate bipolar transistor, means for differentiating an output of said current detection means, a reference voltage source, and means for comparing an output of said differentiation means with an output of said reference voltage source.

11. A semiconductor device driving circuit being connected to an insulated gate bipolar transistor having a control electrode and main electrodes, comprising:

a drive circuit connected to the control electrode of the insulated gate bipolar;

current rate change detection means, connected to the drive circuit, for detecting a change in the rate of current flowing into one of the main electrodes when a voltage applied to the control electrode is lowered for making a transition from a conduction state to a non-conduction state; and

a switch circuit, connected to the drive circuit, and the means for switching between drive states of the drive circuit.

12. The semiconductor device driving circuit as claimed in claim 11, wherein the means comprises:

one of a voltage detector and a current detector connected to the control electrode;

a reference voltage source; and

a comparator with a first input connected to the one of the voltage detector and the current detector and a second input connected to the reference voltage source.

13. The semiconductor device driving circuit as claimed in claim 11, wherein the means comprises:

one of a voltage detector and a current detector connected to the control electrode;

a reference voltage source;

a differentiator with a first input connected to the one of a voltage detector and a current detector; and

a comparator with a first input connected to the differentiator and a second input connected to said reference voltage source.

14. A method of operating a drive circuit for driving an insulated gate bipolar transistor having a control electrode and main electrodes, comprising:

detecting a change in a rate of current flowing into one of the main electrodes; and

switching between driving states of the drive circuit using the change;

wherein detecting the change comprises;

detecting one of a voltage of the control input and a current flowing into the control input; and

differentiating one of the voltage of the control input and a voltage related to the current flowing in the control input to produce a differentiated voltage; and

comparing the differentiated voltage to a reference voltage.