Apparatus for plasma source ion implantation and deposition for cylindrical surfaces

• US 5,988,103 A
• Filed: 01/06/1997
• Issued: 11/23/1999
• Est. Priority Date: 06/23/1995
• Status: Expired due to Fees

• Current Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Original Assignee: Wisconsin Alumni Research Foundation (University of Wisconsin System)
• Inventors: Fetherston, Robert P., Shamim, Muhammad M., Conrad, John R.
• Primary Examiner(s): DANG, THI D
• Application Number:
  US08/778,955
• Time in Patent Office: 1,051 Days
• Field of Search: 118/723 E, 156/345, 315/111.21
• US Class Current: 118/723.00E
• CPC Class Codes: C23C 14/046 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 14/345 using substrate bias
• CPC Class Codes: C23C 14/35 by application of a magnetic field, e.g. magnetron sputtering C23C14/3457 takes precedence
• CPC Class Codes: C23C 14/48 Ion implantation
• CPC Class Codes: C23C 16/515 using pulsed discharges
• CPC Class Codes: H01J 37/32412 Plasma immersion ion implantation
• CPC Class Codes: H01J 37/32541 Shape

Abstract

Uniform ion implantation and deposition onto cylindrical surfaces is achieved by placing a cylindrical electrode in coaxial and conformal relation to the target surface. For implantation and deposition of an inner bore surface the electrode is placed inside the target. For implantation and deposition on an outer cylindrical surface the electrode is placed around the outside of the target. A plasma is generated between the electrode and the target cylindrical surface. Applying a pulse of high voltage to the target causes ions from the plasma to be driven onto the cylindrical target surface. The plasma contained in the space between the target and the electrode is uniform, resulting in a uniform implantation or deposition of the target surface. Since the plasma is largely contained in the space between the target and the electrode, contamination of the vacuum chamber enclosing the target and electrodes by inadvertent ion deposition is reduced. The coaxial alignment of the target and the electrode may be employed for the ion assisted deposition of sputtered metals onto the target, resulting in a uniform coating of the cylindrical target surface by the sputtered material. The independently generated and contained plasmas associated with each cylindrical target/electrode pair allows for effective batch processing of multiple cylindrical targets within a single vacuum chamber, resulting in both uniform implantation or deposition, and reduced contamination of one target by adjacent target/electrode pairs.

Claims

1. An apparatus for implanting and depositing material onto a cylindrical surface, comprising:

(a) an enclosing chamber;

(b) an electrode cylinder supported inside of the enclosing chamber;

(c) support means for supporting a target cylinder in a fixed position in the enclosing chamber in a coaxial and conformal relation to the electrode cylinder to define a space between an inner bore surface of a one of the electrode cylinder or the target cylinder and an outer surface of the other of the electrode cylinder or the target cylinder;

(d) plasma generating means for forming a plasma of ions in the space between the inner bore surface and the outer surface; and

(e) voltage pulse means for applying a voltage differential in a pulse between the target cylinder and the electrode cylinder to accelerate the ions in the plasma toward one of the inner bore surface or the outer surface at an ion energy sufficient to impact the one of the inner bore surface or the outer surface.

2. The apparatus of claim 1 wherein the support means comprises a means for supporting the target cylinder around an outer surface of the electrode.

3. The apparatus of claim 1 additionally comprising a target cylinder attached to the support means.

4. The apparatus of claim 1 wherein the plasma generating means comprises a means for forming a plasma by use of a glow discharge technique.

5. The apparatus of claim 1 wherein the electrode cylinder is a cathode made of a material to be deposited by sputtering onto the target.

6. The apparatus of claim 5 wherein the plasma generating means includes means for applying a radio frequency voltage source to the electrode cylinder.