Photoresist composition for extreme ultraviolet lithography

• US 5,989,776 A
• Filed: 09/21/1998
• Issued: 11/23/1999
• Est. Priority Date: 09/21/1995
• Status: Expired due to Fees

• Current Assignee: Sandia Corporation (Martin Marietta Corporation)
• Original Assignee: Sandia Corporation (Martin Marietta Corporation)
• Inventors: Kubiak, G. D., Felter, T. E.
• Primary Examiner(s): Baxter, Janet
• Assistant Examiner(s): ASHTON, ROSEMARY E
• Application Number:
  US09/158,948
• Time in Patent Office: 428 Days
• Field of Search: 430/270.1
• US Class Current: 430/270.1
• CPC Class Codes: G03F 7/0042 with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists G03F7/075 takes precedence
• CPC Class Codes: G03F 7/094 Multilayer resist systems, e.g. planarising layers
• CPC Class Codes: Y10S 430/148 Light sensitive titanium compound containing

Abstract

A method of producing a patterned array of features, in particular, gate apertures, in the size range 0.4-0.05 μm using projection lithography and extreme ultraviolet (EUV) radiation. A high energy laser beam is used to vaporize a target material in order to produce a plasma which in turn, produces extreme ultraviolet radiation of a characteristic wavelength of about 13 nm for lithographic applications. The radiation is transmitted by a series of reflective mirrors to a mask which bears the pattern to be printed. The demagnified focused mask pattern is, in turn, transmitted by means of appropriate optics and in a single exposure, to a substrate coated with photoresists designed to be transparent to EUV radiation and also satisfy conventional processing methods.

A photoresist composition for extreme ultraviolet radiation of boron carbide polymers, hydrochlorocarbons and mixtures thereof.

Claims

1. A photoresist composition for extreme ultraviolet radiation lithography selected from a group consisting essentially of boron carbide Polymers, hydrochlorocarbons, and combinations thereof, said hydrochlorocarbons photoresist compositions containing about 50-80 atomic percent carbon, and about 15-30 atomic percent chlorine, said boron carbide polymer photoresists containing about 20-50 atomic percent boron.