Fabrication method of a vertical channel transistor
First Claim
1. A method for manufacturing a vertical channel transistor comprising the steps of:
- a) selectively implanting a dopant of high concentration into a semiconductor substrate to form a source region;
b) firstly etching the semiconductor substrate using an insulator and a first photoresist pattern as a mask;
c) secondly etching the substrate using a second photoresist pattern having a shape corresponding to said source region as a mask;
d) implanting a dopant of low concentration into the exposed substrate using said second photoresist pattern as a mask to form a vertical channel layer;
e) implanting a dopant of high concentration into the exposed substrate using same mask to form a drain region;
f) activating said dopants, and forming an ohmic contact layer on said drain region;
g) thirdly etching using a third photoresist pattern for exposing the firstly etched portion of the substrate as a mask;
h) depositing a gate metal on the substrate exposed by the thirdly etching;
i) forming a interlayer dielectric film, and forming an ohmic contact layers on the remained source region; and
j) opening the source, the drain and the gate, and wiring a metal, respectively.
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Accused Products
Abstract
Disclosed is a method for manufacturing a vertical channel transistor comprising the steps of: selectively implanting a dopant of high concentration into a semiconductor substrate to form a source region; firstly etching the semiconductor substrate using an insulator and a first photoresist pattern as a mask; secondly etching the substrate using a second photoresist pattern having a shape corresponding to said source region as a mask; implanting a dopant of low concentration into the exposed substrate using said second photoresist pattern as a mask to form a vertical channel layer; implanting a dopant of high concentration into the exposed substrate using same mask to form a drain region; activating said dopants, and forming an ohmic contact layer on said drain region; thirdly etching using a third photoresist pattern for exposing the firstly etched portion of the substrate as a mask; depositing a gate metal on the substrate exposed by the thirdly etching; and wiring a metal, respectively. This invention can be easily manufactured a vertical channel transistor having a low parasitic resistance and an extremely small gate length without sophicated complex processes.
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Citations
6 Claims
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1. A method for manufacturing a vertical channel transistor comprising the steps of:
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a) selectively implanting a dopant of high concentration into a semiconductor substrate to form a source region; b) firstly etching the semiconductor substrate using an insulator and a first photoresist pattern as a mask; c) secondly etching the substrate using a second photoresist pattern having a shape corresponding to said source region as a mask; d) implanting a dopant of low concentration into the exposed substrate using said second photoresist pattern as a mask to form a vertical channel layer; e) implanting a dopant of high concentration into the exposed substrate using same mask to form a drain region; f) activating said dopants, and forming an ohmic contact layer on said drain region; g) thirdly etching using a third photoresist pattern for exposing the firstly etched portion of the substrate as a mask; h) depositing a gate metal on the substrate exposed by the thirdly etching; i) forming a interlayer dielectric film, and forming an ohmic contact layers on the remained source region; and j) opening the source, the drain and the gate, and wiring a metal, respectively. - View Dependent Claims (2, 3, 4, 5, 6)
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Specification