Method of forming interlayer insulating film

• US 5,989,998 A
• Filed: 08/28/1997
• Issued: 11/23/1999
• Est. Priority Date: 08/29/1996
• Status: Expired due to Term

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Sugahara, Gaku, Aoi, Nobuo, Arai, Koji, Sawada, Kazuyuki
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US08/919,271
• Time in Patent Office: 817 Days
• Field of Search: 438/623, 438/743, 438/763, 438/770, 438/773, 438/792
• US Class Current: 438/623
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: C23C 16/30 Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
• CPC Class Codes: C23C 16/401 containing silicon
• CPC Class Codes: H01L 21/0212 the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02131 the material being halogen doped silicon oxides, e.g. FSG
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/02211 the compound being a silane, e.g. disilane, methylsilane or chlorosilane
• CPC Class Codes: H01L 21/02214 the compound comprising silicon and oxygen
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31058 of organic layers
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/3127 Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
• CPC Class Codes: H01L 21/314 Inorganic layers H01L21/3105, H01L21/32 take precedence
• CPC Class Codes: H01L 21/31608 Deposition of SiO2 H01L21/31625, H01L21/31629 and H01L21/31633 take precedence
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/31629 Deposition of halogen doped silicon oxide, e.g. fluorine doped silicon oxide
• CPC Class Codes: H01L 21/31633 Deposition of carbon doped silicon oxide, e.g. SiOC
• CPC Class Codes: H01L 21/76801 : characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76807 : for dual damascene structures

Abstract

A material containing, as a main component, an organic silicon compound represented by the following general formula:

R.sup.1.sub.x Si(OR.sup.2).sub.4-x

(where R¹ is a phenyl group or a vinyl group; R² is an alkyl group; and x is an integer of 1 to 3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film composed of a silicon oxide film containing an organic component. As the organic silicon compound where R¹ is a phenyl group, there can be listed phenyltrimethoxysilane or diphenyldimethoxysilane. As the organic silicon compound where R¹ is a vinyl group, there can be listed vinyltrimethoxysilane or divinyldimethoxysilane.

Claims

1. A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:

space="preserve" listing-type="equation">R.sup.1.sub.x Si(OR.sup.2).sub.4-x

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.

2. A method of forming an interlayer insulating film according to claim 1, wherein said organic silicon compound is phenyltrimethoxysilane or diphenyldimethoxysilane.

3. A method of forming an interlayer insulating film according to claim 1, wherein said organic silicon compound is vinyltrimethoxysilane or divinyldimethoxysilane.

4. A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:

space="preserve" listing-type="equation">R.sup.1.sub.x SiH.sub.4-x

(where R¹ is a phenyl group or a vinyl group; and

x is an integer of 1 to

     3) is caused to undergo plasma polymerization or react with an oxidizing agent to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.

5. A method of forming an interlayer insulating film according to claim 4, wherein said organic silicon compound is phenylsilane or diphenylsilane.

6. A method of forming an interlayer insulating film according to claim 4, wherein said organic silicon compound is vinylsilane or divinylsilane.

7. A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:

space="preserve" listing-type="equation">R.sup.1.sub.x Si(OR.sup.2).sub.4-x

(where R¹ is a phenyl group or a vinyl group;

R² is an alkyl group; and

x is an integer of 1 to

     3) is caused to undergo plasma polymerization by means of plasma chemical vapor deposition to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.

8. A method of forming an interlayer insulating film, wherein a material containing, as a main component, an organic silicon compound represented by the following general formula:

space="preserve" listing-type="equation">R.sup.1.sub.x SiH.sub.4-x

(where R¹ is a phenyl group or a vinyl group; and

x is an integer of 1 to

     3) is caused to undergo plasma polymerization by means of plasma chemical vapor deposition to form an interlayer insulating film which is composed of a silicon oxide film containing an organic component and has a structure in which constituents are not regularly arranged.