Selective etching of oxides

• US 5,990,019 A
• Filed: 11/10/1997
• Issued: 11/23/1999
• Est. Priority Date: 02/15/1996
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Lee, Whonchee, Hawthorne, Richard C., Torek, Kevin James
• Primary Examiner(s): Breneman, Bruce
• Assistant Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US08/966,945
• Time in Patent Office: 743 Days
• Field of Search: 252/79.1, 134/1.3, 438/721, 438/723, 438/738, 438/743
• US Class Current: 438/723
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/02074 the processing being a planarization of conductive layers
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

A surface having exposed doped silicon dioxide such as BPSG is cleaned with a vapor phase solution that etches thermal oxide at least one-third as fast as it etches the exposed doped silicon dioxide, resulting in more thorough cleaning with less removal of the exposed doped silicon dioxide. Specific applications to formation of container capacitors are disclosed. Preferred cleaning vapor phase solutions include about 1% water, about 5% hydrogen fluoride, and about 5% ammonias. The vapor phase solution is also useful in cleaning methods in which a refractory metal silicide is exposed to the cleaning vapor phase solution such as in cleaning prior to spacer formation or prior to a gate stack contact fill, in which case about 500 PPMV water, about 2% hydrogen fluoride, and about 2% ammonia is most preferred.

Claims

1. A method for treating a surface comprising:

forming a surface situated on a semiconductor substrate, said surface having exposed doped silicon dioxide; and

exposing said surface with said exposed doped silicon dioxide to a vapor phase solution comprising an initiator gas, hydrogen fluoride and ammonia, wherein said vapor phase solution etches thermal oxides at least one-half the rate at which said vapor phase solution etches said doped silicon dioxide.

2. The method as defined in claim 1, wherein said vapor phase solution etches native oxide at least one-half the rate at which said vapor phase solution etches said doped silicon dioxide.

3. The method as defied in claim 1, wherein said vapor phase solution etches undoped silicon dioxide at least one-half the rate at which said vapor phase solution etches said doped silicon dioxide.

4. The method as defined in claim 1 wherein said doped silicon dioxide comprises BPSG.

20. The method as defined in claim 1, further comprising:

forming a secondary surface on said semiconductor substrate and having exposed thereon one of refractory metal silicide and thermal oxide;

wherein exposing said surface with said exposed doped silicon dioxide further comprises exposing said secondary surface to said vapor phase solution, and wherein said exposed refractory metal silicide is not substantially etched.

22. The method as defined in claim 1, wherein said vapor initiator gas is substantially composed of a material selected from a group consisting of H₂ O, CH₃ OH, C₃ H₆ O, and C₃ H₈ O.

5. A method for treating surfaces, said method comprising:

forming a first surface situated on a semiconductor substrate, said first surface having exposed doped silicon dioxide;

forming a second surface situated on a semiconductor substrate, said second surface having exposed refractory metal silicide;

forming a third surface situated on a semiconductor substrate, said third surface having exposed thermal oxide; and

exposing said first, second, and third surfaces to a vapor phase solution comprising an initiator gas, hydrogen fluoride and ammonia, and wherein;

said exposed refractory metal silicide is not substantially etched;

said vapor phase solution removes thermal oxide at least one-half the rate at which said vapor phase solution removes said doped silicon dioxide; and

said exposed refractory metal silicide is not substantially removed.

6. The method as defined in claim 5, wherein said vapor phase solution etches thermal oxide at least one-half the rate at which said vapor phase solution etches the refractory metal silicide.

7. The method as defined in claim 5, wherein said refractory metal silicide comprises titanium silicide.

23. The method as defined in claim 5, wherein said initiator gas substantially composed of a material selected from a group consisting of H₂ O, CH₃ OH, C₃ H₆ O, and C₃ H₈ O.

8. A method for providing a recess, said method comprising:

providing a silicon substrate having a layer of doped silicon dioxide formed thereover, said silicon substrate having a source/drain region defined therein;

forming in said layer of doped silicon dioxide a recess extending down through said layer of doped silicon dioxide to said source/drain region;

exposing said source/drain region to a vapor phase solution comprising hydrogen fluoride, ammonia, and an initiator gas, and having an etch rate for thermal oxide of at least one-half of the etch rate of said vapor phase solution for said layer of doped silicon dioxide;

forming a layer of conductive material over said silicon substrate and said layer of doped silicon dioxide to contact said source/drain region; and

removing said layer of conductive material from the top thereof downward to at least the topmost surface of said layer of doped silicon dioxide, leaving in said recess a portion of said layer of conductive material.

9. The method as defined in claim 8, wherein said vapor phase solution has an etch rate for thermal oxide of at least one-third of the etch rate of said vapor phase solution for said layer of doped silicon dioxide.

10. The method as defined in claim 8, wherein said vapor phase solution comprises water, about 2% to 20% hydrogen fluoride, and about 2% to 20% ammonia.

11. The method as defined in claim 8, wherein said layer of doped silicon dioxide comprises BPSG.

12. The method as defined in claim 8 wherein said conductive material comprises polysilicon.

13. A method for treating a surface situated on a semiconductor substrate, said method comprising:

performing a chemical mechanical polishing upon a semiconductor substrate to expose a doped silicon dioxide and a silicon on a surface of said semiconductor substrate;

exposing said doped silicon dioxide and said silicon on said surface of said semiconductor substrate to a vapor phase solution having an etch rate for thermal oxide of at least one-half of the etch rate of said vapor phase solution for said layer of doped silicon dioxide, wherein said vapor phase solution comprises an initiator gas that is substantially composed of a material selected from a group consisting of H₂ O, CH₃ OH, C₃ H₆ O, and C₃ H₈ O in the range of about 2% to about 20% hydrogen fluoride, and about 2% to 20% ammonia, wherein said doped silicon dioxide is not substantially etched.

14. The method as defined in claim 13, wherein said vapor phase solution has an etch rate for thermal oxide of at least one-third of the etch rate of said vapor phase solution for said layer of doped silicon dioxide.

15. The method as defined in claim 13, wherein said vapor phase solution further comprises about 1% water, about 5% hydrogen fluoride, and about 5% ammonia.

16. The method as defined in claim 13, wherein said vapor phase solution comprises about 1% water, about 2% hydrogen fluoride, and about 2% ammonia.

17. The method as defined in claim 13, wherein said doped silicon dioxide comprises BPSG.

18. The method as defined in claim 13, wherein said silicon comprises polysilicon.

19. The method as defined in claim 18, wherein said polysilicon comprises polysilicon containers for container capacitors.

21. The method as defined in claim 13, further comprising:

forming a secondary surface situated on said semiconductor substrate having exposed thereon one of refractory metal silicide and thermal oxide;

wherein exposing said doped silicon dioxide and said silicon on said surface of said semiconductor substrate further comprises exposing said secondary surface to said vapor phase solution, and wherein said exposed refractory metal silicide is not substantially etched.

24. A method of treating materials situated on a semiconductor substrate comprising:

forming a first surface situated on a semiconductor substrate, said first surface having exposed doped silicon dioxide;

forming a second surface situated on said semiconductor substrate, said second surface having exposed refractory metal silicide;

forming a third surface situated on said semiconductor substrate, said third surface having exposed thermal oxide; and

exposing said first, second, and third surfaces to a vapor phase solution comprising hydrogen fluoride, ammonia, and an said initiator gas that is substantially composed of a material selected from a group consisting of H₂ O, CH₃ OH, C₃ H₆ O, and C₃ H₈ O, wherein said vapor phase solution removes thermal oxide at least one-half the rate at which said vapor phase solution removes said doped silicon dioxide, and wherein said exposed refractory metal silicide is not substantially removed.

25. The method as defined in claim 24, wherein said vapor phase solution comprises about 2% to 20% hydrogen fluoride and about 2% to 20% ammonia, whereby said doped silicon dioxide is not substantially removed.

26. The method as defined in claim 24, wherein said vapor phase solution has an etch rate for thermal oxide of at least one-third of the etch rate of said vapor phase solution for said layer of doped silicon dioxide.

27. A method for treating a surface comprising:

forming a surface situated on a semiconductor substrate, said surface having exposed doped silicon dioxide; and

exposing said surface with said exposed doped silicon dioxide to a vapor phase solution comprising hydrogen fluoride, ammonia, and an initiator gas composed of a material selected from a group consisting of H₂ O, CH₃ OH, C₃ H₆ O, and C₃ H₈ O, wherein said vapor phase solution etches thermal oxides at least one-half the rate at which said vapor phase solution etches said doped silicon dioxide.

28. A method for treating surfaces, said method comprising:

forming a first surface situated on a semiconductor substrate, said first surface having exposed doped silicon dioxide;

forming a second surface situated on a semiconductor substrate, said second surface having exposed refractory metal silicide;

forming a third surface situated on a semiconductor substrate, said third surface having exposed thermal oxide; and

exposing said first, second, and third surfaces to a vapor phase solution comprising an hydrogen fluoride, ammonia, and an initiator gas composed of a material selected from a group consisting of H₂ O, CH₃ OH, C₃ H₆ O, and C₃ H₈ O, wherein;

said exposed refractory metal silicide is not substantially etched;

said vapor phase solution removes thermal oxide at least one-half the rate at which said vapor phase solution removes said doped silicon dioxide; and

said exposed refractory metal silicide is not substantially removed.

29. A method for providing a recess, said method comprising:

providing a silicon substrate having a layer of doped silicon dioxide formed thereover, said silicon substrate having a source/drain region defined therein;

forming in said layer of doped silicon dioxide a recess extending down through said layer of doped silicon dioxide to said source/drain region;

exposing said source/drain region to a vapor phase solution comprising water, about 2% to 20% hydrogen fluoride, and about 2% to 20% ammonia, and having an etch rate for thermal oxide of at least one-half of the etch rate of said vapor phase solution for said layer of doped silicon dioxide;

forming a layer of conductive material over said silicon substrate and said layer of doped silicon dioxide to contact said source/drain region; and

removing said layer of conductive material from the top thereof downward to at least the topmost surface of said layer of doped silicon dioxide, leaving in said recess a portion of said layer of conductive material.

30. A method for treating a surface situated on a semiconductor substrate, said method comprising:

performing a chemical mechanical polishing upon a semiconductor substrate to expose a doped silicon dioxide and a silicon on a surface of said semiconductor substrate;

exposing said doped silicon dioxide and said silicon on said surface of said semiconductor substrate to a vapor phase solution having an etch rate for thermal oxide of at least one-half of the etch rate of said vapor phase solution for said layer of doped silicon dioxide, wherein said vapor phase solution comprises about 1% water, about 5% hydrogen fluoride, and about 5% ammonia, wherein said doped silicon dioxide is not substantially etched.

31. A method for treating a surface situated on a semiconductor substrate, said method comprising:

performing a chemical mechanical polishing upon a semiconductor substrate to expose a doped silicon dioxide and a silicon on a surface of said semiconductor substrate;

exposing said doped silicon dioxide and said silicon on said surface of said semiconductor substrate to a vapor phase solution having an etch rate for thermal oxide of at least one-half of the etch rate of said vapor phase solution for said layer of doped silicon dioxide, wherein said vapor phase solution comprises about 1% water, about 2% hydrogen fluoride, and about 2% ammonia, wherein said doped silicon dioxide is not substantially etched.