Active matrix device utilizing light shielding means for thin film transistors

• US 5,990,491 A
• Filed: 12/10/1997
• Issued: 11/23/1999
• Est. Priority Date: 04/29/1994
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Zhang, Hongyong
• Primary Examiner(s): Tran, Minh Loan
• Application Number:
  US08/988,393
• Time in Patent Office: 713 Days
• Field of Search: 257/57, 257/59, 257/66, 257/72, 257/435, 257/642, 257/776, 349/43, 349/44, 349/110
• US Class Current: 257/57
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78633 with a light shield

Abstract

A channel forming region of a thin-film transistor is covered with an electrode and wiring line that extends from a source line. As a result, the channel forming region is prevented from being illuminated with light coming from above the thin-film transistor, whereby the characteristics of the thin-film transistor can be made stable.

Claims

1. An active matrix device comprising:

a substrate;

a switching element comprising a thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a light shielding layer provided on said transparent organic resin film;

an interlayer insulating film provided over said light shielding layer; and

a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.

2. The device of claim 1 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

3. The device of claim 1 wherein said pixel electrode is directly connected with said thin film transistor.

4. The device of claim 1 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

5. An active matrix device comprising:

a substrate;

a switching element comprising a thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided over said interlayer insulating film and electrically connected with said switching element.

6. The device of claim 5 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

7. An active matrix device comprising:

a substrate;

a switching element comprising a thin film transistor provided over said substrate;

a transparent organic resin film provided directly on said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.

8. The device of claim 7 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

9. An active matrix device comprising:

a substrate;

a switching element comprising a thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided on said interlayer insulating film and directly connected with a drain region of said thin film transistor.

10. The device of claim 9 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

11. An active matrix device comprising:

a substrate;

a switching element comprising a thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part wholly overlapping with a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided on said interlayer insulating film and electrically connected with said switching element.

12. The device of claim 11 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

13. An active matrix device comprising:

a substrate;

at least one thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a light shielding layer provided on said transparent organic resin film;

an interlayer insulating film provided over said light shielding layer; and

a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.

14. The device of claim 13 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

15. An active matrix device comprising:

a substrate;

at least one thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided over said interlayer insulating film and electrically connected with said thin film transistor.

16. The device of claim 15 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

17. An active matrix device comprising:

a substrate;

at least one thin film transistor provided over said substrate;

a transparent organic resin film provided directly on said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.

18. The device of claim 17 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

19. An active matrix device comprising:

a substrate;

at least one thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part being provided over a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided on said interlayer insulating film and directly connected with a drain region of said thin film transistor.

20. The device of claim 19 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.

21. An active matrix device comprising:

a substrate;

at least one thin film transistor provided over said substrate;

a transparent organic resin film provided over said thin film transistor;

a source line connected with a source region of said thin film transistor and comprising a light shielding part provided over said transparent organic resin film, said light shielding part wholly overlapping with a channel forming region of said thin film transistor;

an interlayer insulating film provided over said light shielding part; and

a pixel electrode provided on said interlayer insulating film and electrically connected with said thin film transistor.

22. The device of claim 21 wherein said interlayer insulating film comprises aluminum oxide, silicon nitride or aluminum nitride.