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Semiconductor light-emitting element and method for manufacturing the same

  • US 5,990,495 A
  • Filed: 07/18/1996
  • Issued: 11/23/1999
  • Est. Priority Date: 08/25/1995
  • Status: Expired due to Term
First Claim
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1. A semiconductor light-emitting element comprising:

  • a monocrystal substrate;

    a buffer layer formed directly on said monocrystal substrate and comprising a monocrystal Alx Ga1-x N (0<

    x≦

    1) layer having a half-value width of an X-ray rocking curve falling within a range of 5 minutes or less, said buffer layer being formed at a high first temperature; and

    an element-forming layer formed on said buffer layer and comprising Alx Gay In1-x-y N (0≦

    x+y≦

    1, 0≦

    x, y≦

    1), said element-forming layer being formed at a second temperature which is lower than said high first temperature.

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