Nitride compound semiconductor light emitting element and its manufacturing method
First Claim
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1. A nitride compound semiconductor light emitting element comprising:
- an n-type semiconductor layer made of a nitride compound semiconductor; and
a first metal layer formed on said semiconductor layer and containing as a major component thereof at least an element selected from the group consisting of palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu).
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Abstract
A nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu), and another metal layer made of one of elements: titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W) and magnesium (Mg), to increase the adhesive strength of its electrodes with a semiconductor layer, reduce the contact resistance of the electrodes to improve the ohmic characteristics, and improve the external quantum efficiency by combination of thin-film metals with a transparent electrode.
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Citations
12 Claims
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1. A nitride compound semiconductor light emitting element comprising:
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an n-type semiconductor layer made of a nitride compound semiconductor; and a first metal layer formed on said semiconductor layer and containing as a major component thereof at least an element selected from the group consisting of palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu). - View Dependent Claims (2, 3, 4, 5)
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6. A nitride compound semiconductor light emitting element comprising:
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an p-type semiconductor layer made of a nitride compound semiconductor; a first metal layer formed on said semiconductor layer and containing as a major component thereof at least an element selected from the group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), magnesium (Mg) and gold (Au); a second metal layer stacked on said first metal layer and made of at least an element selected from the group consisting of titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W), magnesium (Mg) and gold (Au); and a third metal layer stacked on said second metal layer and containing as a major element thereof at least an element selected from the group consisting of palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co), copper (Cu), tungsten (W) and platinum (Pt). - View Dependent Claims (7, 8, 9, 10, 11, 12)
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Specification