Nitride compound semiconductor light emitting element and its manufacturing method

• US 5,990,500 A
• Filed: 03/03/1999
• Issued: 11/23/1999
• Est. Priority Date: 03/25/1998
• Status: Expired due to Term

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Okazaki, Haruhiko
• Primary Examiner(s): Chaudhuri, Olik
• Assistant Examiner(s): Wille, Douglas A.
• Application Number:
  US09/261,819
• Time in Patent Office: 265 Days
• Field of Search: 257/94, 257/99, 257/745, 257/748
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

A nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu), and another metal layer made of one of elements: titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W) and magnesium (Mg), to increase the adhesive strength of its electrodes with a semiconductor layer, reduce the contact resistance of the electrodes to improve the ohmic characteristics, and improve the external quantum efficiency by combination of thin-film metals with a transparent electrode.

Claims

1. A nitride compound semiconductor light emitting element comprising:

an n-type semiconductor layer made of a nitride compound semiconductor; and

a first metal layer formed on said semiconductor layer and containing as a major component thereof at least an element selected from the group consisting of palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu).

2. The nitride compound semiconductor light emitting element as recited in claim 1, wherein said first metal layer additionally contains at least an element selected from the group consisting of titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W) and hafnium (Hf).

3. The nitride compound semiconductor light emitting element as recited in claim 1, further comprising a second metal layer formed between said semiconductor layer and said first metal layer, said second metal layer being made of at least an element selected from the group consisting of titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W) and hafnium (Hf).

4. The nitride compound semiconductor light emitting element as recited in claim 3, wherein said second metal layer is not thicker than 5 nm.

5. The nitride compound semiconductor light emitting element as recited in claim 3, wherein said first metal layer and said second metal layer are alloyed each other.

6. A nitride compound semiconductor light emitting element comprising:

an p-type semiconductor layer made of a nitride compound semiconductor;

a first metal layer formed on said semiconductor layer and containing as a major component thereof at least an element selected from the group consisting of titanium (Ti), molybdenum (Mo), tungsten (W), magnesium (Mg) and gold (Au);

a second metal layer stacked on said first metal layer and made of at least an element selected from the group consisting of titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W), magnesium (Mg) and gold (Au); and

a third metal layer stacked on said second metal layer and containing as a major element thereof at least an element selected from the group consisting of palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co), copper (Cu), tungsten (W) and platinum (Pt).

7. The nitride compound semiconductor light emitting element as recited in claim 6, further comprising a transparent electrode formed on said third metal layer.

8. The nitride compound semiconductor light emitting element as recited in claim 7, wherein said first metal layer is not thicker than 5 nm, said second metal layer is not thicker than 5 nm and said third metal layer is not thicker than 10 nm.

9. The nitride compound semiconductor light emitting element as recited in claim 8, wherein said first metal layer, said second metal layer and said third metal layer are alloyed each other.

10. The nitride compound semiconductor light emitting element as recited in claim 9, wherein said transparent electrode is made of an indium tin oxide.

11. The nitride compound semiconductor light emitting element as recited in claim 7, wherein said first metal layer is island-shaped on said semiconductor layer and said second metal layer is island-shaped on said semiconductor layer or on said first metal layer.

12. The nitride compound semiconductor light emitting element as recited in claim 11, wherein said first metal layer is not thicker than 1 nm and said second metal layer is not thicker than 1 nm.