MOSFET with a thin gate insulating film
First Claim
1. A MOSFET, comprising:
- a first-conductivity type semiconductor substrate;
an insulating film formed on said semiconductor substrate;
a gate electrode formed on said semiconductor substrate via said insulating film; and
a second-conductivity type source/drain region formed on both sides of a channel forming region located under said gate electrode formed on said semiconductor substrate via said insulating film; and
wherein a transconductance (gm) is as follows;
space="preserve" listing-type="equation">gm>
400 V.sub.DD +140 in nMOS
space="preserve" listing-type="equation">gm>
260 V.sub.DD +10 in pMOSwherein a unit of VDD is V and a unit of gm is mS/mm and gm value is that at room temperature.
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Accused Products
Abstract
A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.
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Citations
14 Claims
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1. A MOSFET, comprising:
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a first-conductivity type semiconductor substrate; an insulating film formed on said semiconductor substrate; a gate electrode formed on said semiconductor substrate via said insulating film; and a second-conductivity type source/drain region formed on both sides of a channel forming region located under said gate electrode formed on said semiconductor substrate via said insulating film; and wherein a transconductance (gm) is as follows;
space="preserve" listing-type="equation">gm>
400 V.sub.DD +140 in nMOS
space="preserve" listing-type="equation">gm>
260 V.sub.DD +10 in pMOSwherein a unit of VDD is V and a unit of gm is mS/mm and gm value is that at room temperature. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A MOSFET comprising:
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a first-conductivity type semiconductor substrate; an insulating film formed on said semiconductor substrate; a gate electrode formed on said semiconductor substrate via said insulating film; and a second-conductivity type source/drain region formed on both sides of a channel forming region located under said gate electrode formed on said semiconductor substrate via said insulating film; and wherein a current drive capability is as follows;
space="preserve" listing-type="equation">I.sub.d >
0.598 V.sub.DD -0.247 (in nMOS)
space="preserve" listing-type="equation">I.sub.d >
0.268 V.sub.DD -0.012 (in pMOS)where a unit of VDD is V and a unit of Id is mA/μ
m. - View Dependent Claims (8, 9)
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10. A MOSFET comprising:
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a first-conductivity type semiconductor substrate; an insulating film formed on said semiconductor substrate; a gate electrode formed on said semiconductor substrate via said insulating film; and a second-conductivity type source/drain region formed on both sides of a channel forming region located under said gate electrode formed on said semiconductor substrate via said insulating film; and wherein a transconductance (gm) is as follows;
space="preserve" listing-type="equation">gm>
400×
V.sub.DD +140 (in nMOS)
space="preserve" listing-type="equation">gm>
260×
V.sub.DD +10 (in pMOS)where a unit of VDD is V and a unit of gm is mS/mm and gm value is that at room temperature, and wherein a current drive capability is as follows;
space="preserve" listing-type="equation">I.sub.d >
0.598 V.sub.DD -0.247 (in nMOS)
space="preserve" listing-type="equation">I.sub.d >
0.268 V.sub.DD -0.102 (in pMOS)wherein a unit of VDD is V and a unit of Id is mA/μ
m. - View Dependent Claims (11, 12, 13, 14)
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Specification