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Separate confinement heterostructure laser device

  • US 5,991,321 A
  • Filed: 12/16/1997
  • Issued: 11/23/1999
  • Est. Priority Date: 12/21/1996
  • Status: Expired due to Fees
First Claim
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1. A separate confinement heterostructure laser device, comprising:

  • an optical guiding region;

    an active region provided in the optical guiding region; and

    n-type and p-type cladding regions provided on opposite sides of the optical guiding region,wherein a first electron-reflecting barrier layer is provided in a p-side region of the laser device,a composition of the first electron-reflecting barrier layer is set in such a manner that the first electron-reflecting barrier layer has an X-minimum which is higher than that in an adjacent portion of the p-side region at least on one selected side of the first electron-reflecting barrier layer, the selected side being disposed between the first electron-reflecting barrier layer and the active region, andelectron tunneling between X-bands of adjacent portions of the p-side region on opposite sides of the first electron-reflecting barrier layer is prevented by satisfying at least one of a first condition and a second condition, the first condition being such that a thickness of the first electron-reflecting barrier layer is set at a sufficient value for preventing the electron tunneling, and the second condition being such that parts of the p-side region on the opposite sides of the first electron-reflecting barrier layer have compositions which are sufficiently different from one another for preventing the electron tunneling.

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