Method of cleaning metallic films built up within thin film deposition apparatus
First Claim
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1. A method of cleaning metallic films built up within a thin film deposition apparatus, said method comprising the steps of:
- (a) introducing a β
-diketone into a thin film deposition apparatus having an exhaust system;
(b) then introducing oxygen, along with the β
-diketone, into the thin film deposition apparatus at a flow rate of up to 5 times the flow rate of the β
-diketone when expressed as a molar ratio and at conditions effective to oxidize the metallic film to produce a film of oxide thereof, to complex the oxide film with the β
-diketone, and to sublimate the complex; and
(c) intermittently varying the pumping speed of the exhaust system such that oxidation of the metallic film is the rate-determining step.
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Abstract
A method of cleaning metallic films built up within a thin film deposition apparatus is disclosed. The method includes an oxidation step to oxidize the metallic film and produce a film of the oxide thereof, a complexing step to complex the oxide film and produce a complex thereof, and a sublimation step to sublimate the complex. The conditions of these cleaning steps are set so that the oxidation step is the rate-determining step.
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Citations
8 Claims
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1. A method of cleaning metallic films built up within a thin film deposition apparatus, said method comprising the steps of:
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(a) introducing a β
-diketone into a thin film deposition apparatus having an exhaust system;(b) then introducing oxygen, along with the β
-diketone, into the thin film deposition apparatus at a flow rate of up to 5 times the flow rate of the β
-diketone when expressed as a molar ratio and at conditions effective to oxidize the metallic film to produce a film of oxide thereof, to complex the oxide film with the β
-diketone, and to sublimate the complex; and(c) intermittently varying the pumping speed of the exhaust system such that oxidation of the metallic film is the rate-determining step. - View Dependent Claims (2, 3, 4)
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5. A method of cleaning metallic films built up within a thin film deposition apparatus, said method comprising the steps of:
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(a) simultaneously introducing oxygen and β
-diketone into a thin film deposition apparatus having an exhaust system, wherein said oxygen is introduced at a flow rate of up to 5 times the flow rate of the β
-diketone when expressed as a molar ratio and at conditions effective to oxidize the metallic film to produce a film of oxide thereof, to complex the oxide film with the β
-diketone, and to sublimate the complex; and(b) intermittently varying the pumping speed of the exhaust system such that oxidation of the metallic film is the rate-determining step. - View Dependent Claims (6, 7, 8)
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Specification