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Evaluation method for polycrystalline silicon film

  • US 5,993,893 A
  • Filed: 02/19/1998
  • Issued: 11/30/1999
  • Est. Priority Date: 02/19/1997
  • Status: Expired due to Fees
First Claim
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1. An evaluation method for a polycrystalline silicon film, comprising:

  • a first step of forming an insulating film on a silicon substrate and forming an opening in the insulating film;

    a second step of depositing a polycrystalline silicon film on the overall area of the insulating film and the silicon substrate;

    a third step of doping the polycrystalline silicon film with an impurity and performing heat treatment to form a diffused layer in a surface region of the silicon substrate through the polycrystalline silicon film in the opening of the insulating film; and

    a fourth step of evaluating the diffused layer formed by the third step to evaluate a film quality of the polycrystalline silicon film in accordance with said impurity of said diffused layer.

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