Evaluation method for polycrystalline silicon film

• US 5,993,893 A
• Filed: 02/19/1998
• Issued: 11/30/1999
• Est. Priority Date: 02/19/1997
• Status: Expired due to Fees

• Current Assignee: NEC Electronics Corporation (Renesas Electronics Corporation)
• Original Assignee: NEC Corporation
• Inventors: Kikuchi, Masaharu
• Primary Examiner(s): King, Roy V.
• Application Number:
  US09/025,668
• Time in Patent Office: 649 Days
• Field of Search: 427/8, 427/248.1, 427/255.18, 427/255.7, 427/372.2, 438/764, 438/488
• US Class Current: 427/8
• CPC Class Codes: G01N 27/041 of a solid body
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Abstract

The invention provides an evaluation method for a polycrystalline silicon film by which the film quality of a polycrystalline silicon film can be evaluated by a simple method. A silicon oxide film is formed on a p-type silicon substrate, and a photo-resist film having two openings therein is formed on the silicon oxide film. The silicon oxide film is etched to form openings therein, and a polycrystalline silicon film is deposited. Then, arsenic is ion implanted, and heat treatment is performed to form a diffused layer. The polycrystalline silicon film is patterned to form polycrystalline silicon electrodes. A voltage is applied between the polycrystalline silicon electrodes to measure a withstanding voltage and a condition of the diffused layer is recognized, and evaluation of the film quality of the polycrystalline silicon film and an interface condition between the polycrystalline silicon film and the p-type silicon substrate is performed based on the recognition.

Claims

1. An evaluation method for a polycrystalline silicon film, comprising:

a first step of forming an insulating film on a silicon substrate and forming an opening in the insulating film;

a second step of depositing a polycrystalline silicon film on the overall area of the insulating film and the silicon substrate;

a third step of doping the polycrystalline silicon film with an impurity and performing heat treatment to form a diffused layer in a surface region of the silicon substrate through the polycrystalline silicon film in the opening of the insulating film; and

a fourth step of evaluating the diffused layer formed by the third step to evaluate a film quality of the polycrystalline silicon film in accordance with said impurity of said diffused layer.

2. An evaluation method for a polycrystalline silicon film as claimed in claim 1, wherein, after the third step, the polycrystalline silicon film is patterned to form a pair of electrodes which contact with the diffused layer, and in the fourth step, an electric resistance of the diffused layer is measured making use of the electrodes.

3. An evaluation method for a polycrystalline silicon film as claimed in claim 1, wherein, in the first step, a pair of openings are formed in the insulating layer, and after the third step, the polycrystalline silicon film is patterned to form a pair of electrodes which contact with different pieces of the diffused layer, and then in the fourth step, a withstanding voltage between the different pieces of the diffused layer is measured.

4. An evaluation method for a polycrystalline silicon film as claimed in claim 1, wherein the first to fourth steps are used also as steps of manufacturing a product chip, and the opening is formed on the product chip or a scribe line.

5. An evaluation method for a polycrystalline silicon film as claimed in claim 1, wherein openings of a same pattern or different patterns are formed in different regions on a single wafer, and a film quality of the polycrystalline silicon film is evaluated for the plurality of different regions.

6. An evaluation method for a polycrystalline silicon film, comprising:

a first step of forming an insulating film on a silicon substrate and forming an opening in the insulating film;

a second step of depositing a polycrystalline silicon film on the overall area of the insulating film;

a third step of doping the polycrystalline silicon film with an impurity and performing heat treatment to form a diffused layer in a surface region of the silicon substrate through the polycrystalline silicon film in the opening of the insulating film; and

a fourth step of evaluating the diffused layer formed by the third step thereby to evaluate a film quality of the polycrystalline silicon film;

wherein, after the third step, the polycrystalline silicon film is patterned to form a pair of electrodes which contact with the diffused layer, and in the fourth step, an electric resistance of the diffused layer is measured making use of the electrodes.