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Method of constructing stacked packages

  • US 5,994,166 A
  • Filed: 03/10/1997
  • Issued: 11/30/1999
  • Est. Priority Date: 03/10/1997
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a semiconductor assembly, comprising:

  • providing a base substrate of a planar non-conductive material having a first surface including a plurality of bond pads thereon and a second surface;

    providing a first stacked substrate of a planar non-conductive material having a first surface and a second surface, said first surface and second surface of said first stacked substrate each includes a plurality of bond pads thereon;

    disposing at least one first semiconductor die on said first surface of said first stacked substrate said at least one first semiconductor die including a plurality of bond pads;

    disposing at least one second semiconductor die on said second surface of said first stacked substrate, said at least one second semiconductor die including a plurality of bond pads;

    disposing at least one third semiconductor die on said first surface of said base substrate wherein said at least one third semiconductor die including a plurality of bond pads;

    coupling at least one first intercoupler electrically between at least one of said plurality of first surface bond pads of said first stacked substrate and at least one of said plurality of said bond pads on said second surface of said first stacked substrate, and at least one of said plurality of bond pads of said first semiconductor die;

    coupling said at least one first intercoupler electrically between at least one of said plurality of said bond pads of said first surface of said first stacked substrate and at least one of said plurality of bond pads on said second surface of said first stacked substrate, and at least one of said plurality of second semiconductor die bond pads;

    providing at least one second intercoupler extending between and electrically coupling said base substrate and said first stacked substrate, said second intercoupler physically positioning said first stacked substrate in a substantially parallel spaced relationship to said base substrate;

    providing a second stacked substrate of a planar non-conductive material having a first surface and a second surface, the first surface and the second surface of said second stacked substrate each including a plurality of bond pads;

    disposing at least one fourth semiconductor die on said first surface of said second stacked substrate, said fourth semiconductor die including a plurality of bond pads;

    p1 disposing at least one fifth semiconductor die on said second surface of said second stacked substrate, said fifth semiconductor die includes a plurality of bond pads,electrically coupling at least one third intercoupler between at least one of the plurality of bond pads on the first surface of said base substrate and said third semiconductor die;

    electrically coupling at least one fourth intercoupler between at least one of said plurality of bond pads on said first surface of said second stacked substrate and bond pads on said second surface of said second stacked substrate and at least one of said plurality of fourth semiconductor die bond pads;

    electrically coupling at least one fifth intercoupler extending between and electrically coupling said second stacked substrate and one of said first surface of said first stacked substrate, said second surface of said first stacked substrate, and said first surface of said base substrate, said fifth intercoupler separating said second stacked substrate from at least one of said first surface of said first stacked substrate, said second surface of said first stacked substrate, and said first surface of said base substrate;

    disposing a dielectric material between said first surface of said first stacked substrate and said bond pads on said first semiconductor die;

    disposing a dielectric material between said first surface of said base substrate and said second surface of said first stacked substrate; and

    encapsulating said first stacked substrate, said second stacked substrate, said at least one first semiconductor die, at least one second semiconductor die, said at least one third semiconductor die, said at least one fourth semiconductor die, said at least one fifth semiconductor die, and the upper surface including a plurality of bond pads thereon of said base substrate in an encapsulation material.

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