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Method of fabrication of display pixels driven by silicon thin film transistors

  • US 5,994,174 A
  • Filed: 09/29/1997
  • Issued: 11/30/1999
  • Est. Priority Date: 09/29/1997
  • Status: Expired due to Term
First Claim
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1. A method for fabricating pixels for active matrix display, comprising:

  • providing a low temperature substrate;

    forming a conductive layer on the substrate;

    forming an insulative layer on the conductive layer;

    forming a layer of amorphous silicon on the insulative layer;

    crystallizing the amorphous silicon layer;

    forming an insulation layer on the amorphous silicon layer;

    forming a conductor layer on the insulation layer;

    patterning and etching the conductor and insulation layers to form at least one TFT gate electrode on the amorphous silicon layer;

    doping exposed areas of the amorphous silicon layer to form a doped silicon layer;

    patterning and etching the doped silicon layer to form at least one TFT drain electrode and at least one TFT source electrode;

    patterning and etching said insulative layer and said conductive layer to form at least one pixel electrode; and

    forming at least one conductor interconnecting the at least one source electrode and the at least one pixel electrode.

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