Method of fabrication of display pixels driven by silicon thin film transistors
First Claim
1. A method for fabricating pixels for active matrix display, comprising:
- providing a low temperature substrate;
forming a conductive layer on the substrate;
forming an insulative layer on the conductive layer;
forming a layer of amorphous silicon on the insulative layer;
crystallizing the amorphous silicon layer;
forming an insulation layer on the amorphous silicon layer;
forming a conductor layer on the insulation layer;
patterning and etching the conductor and insulation layers to form at least one TFT gate electrode on the amorphous silicon layer;
doping exposed areas of the amorphous silicon layer to form a doped silicon layer;
patterning and etching the doped silicon layer to form at least one TFT drain electrode and at least one TFT source electrode;
patterning and etching said insulative layer and said conductive layer to form at least one pixel electrode; and
forming at least one conductor interconnecting the at least one source electrode and the at least one pixel electrode.
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Accused Products
Abstract
Display pixels driven by silicon thin film transistors are fabricated on plastic substrates for use in active matrix displays, such as flat panel displays. The process for forming the pixels involves a prior method for forming individual silicon thin film transistors on low-temperature plastic substrates. Low-temperature substrates are generally considered as being incapable of withstanding sustained processing temperatures greater than about 200° C. The pixel formation process results in a complete pixel and active matrix pixel array. A pixel (or picture element) in an active matrix display consists of a silicon thin film transistor (TFT) and a large electrode, which may control a liquid crystal light valve, an emissive material (such as a light emitting diode or LED), or some other light emitting or attenuating material. The pixels can be connected in arrays wherein rows of pixels contain common gate electrodes and columns of pixels contain common drain electrodes. The source electrode of each pixel TFT is connected to its pixel electrode, and is electrically isolated from every other circuit element in the pixel array.
123 Citations
8 Claims
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1. A method for fabricating pixels for active matrix display, comprising:
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providing a low temperature substrate; forming a conductive layer on the substrate; forming an insulative layer on the conductive layer; forming a layer of amorphous silicon on the insulative layer; crystallizing the amorphous silicon layer; forming an insulation layer on the amorphous silicon layer; forming a conductor layer on the insulation layer; patterning and etching the conductor and insulation layers to form at least one TFT gate electrode on the amorphous silicon layer; doping exposed areas of the amorphous silicon layer to form a doped silicon layer; patterning and etching the doped silicon layer to form at least one TFT drain electrode and at least one TFT source electrode; patterning and etching said insulative layer and said conductive layer to form at least one pixel electrode; and forming at least one conductor interconnecting the at least one source electrode and the at least one pixel electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification