Compensation of the channel region critical dimension, after polycide gate, lightly doped source and drain oxidation procedure

• US 5,994,192 A
• Filed: 05/29/1998
• Issued: 11/30/1999
• Est. Priority Date: 05/29/1998
• Status: Expired due to Term

• Current Assignee: Vanguard International Semiconductor Corporation
• Original Assignee: Vanguard International Semiconductor Corporation
• Inventors: Chen, Chun-Yao
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LEBENTRITT, MICHAEL
• Application Number:
  US09/087,820
• Time in Patent Office: 550 Days
• Field of Search: 438/301, 438/303, 438/305, 438/592, 438/595
• US Class Current: 438/303
• CPC Class Codes: H01L 21/28061 the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction H01L21/28052 takes precedence
• CPC Class Codes: H01L 21/28114 characterised by the sectional shape, e.g. T, inverted-T
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET

Abstract

A process for fabricating a MOSFET device has been developed featuring a polycide gate structure, comprised of a metal silicide component, overlying a polysilicon component, and with the metal silicide shape intentionally fabricated to be narrower than the underlying polysilicon shape. This polycide configuration is obtained using an isotropic RIE procedure for the metal silicide shape, while using an anisotropic RIE procedure for the definition of the polysilicon shape. The undercut metal silicide shape can now accommodate a thermally grown oxide layer, thicker than the thermally grown oxide formed on the underlying, straight walled polysilicon shape, and thus allowing a lightly doped source and drain region, and the subsequent MOSFET channel length, to be defined by the thin oxide, on the sides of the straight walled polysilicon shape.

Claims

1. A method for fabricating a MOSFET device, on a semiconductor substrate, comprising the steps of:

forming a gate insulator layer on said semiconductor substrate;

depositing a polysilicon layer;

depositing a metal silicide layer;

depositing a composite insulator layer;

forming a photoresist shape;

anisotropic etching of said composite insulator layer, using said photoresist shape as an etch mask, creating a straight walled composite insulator shape, with the width of said straight walled composite insulator shape equal to the width of said photoresist shape;

forming a polycide gate structure comprised of a metal silicide shape, on a polysilicon shape, via isotropic etching of said metal silicide layer, creating said metal silicide shape, with the width of said metal silicide shape narrower than the width of said photoresist shape, and via an anisotropic etching of said polysilicon layer, using said photoresist shape as a mask, creating a straight walled polysilicon shape, with the width of said straight walled polysilicon shape equal to the width of said photoresist shape;

growing a first oxide layer on the exposed sides of said metal silicide shape;

growing a second oxide layer on the exposed sides of said straight walled polysilicon shape;

ion implanting a first conductivity imparting dopant into a region of said semiconductor substrate, defined by said second oxide layer, on the sides of said straight walled polysilicon shape, to form a lightly doped source and drain region;

forming insulator spacers on the sides of said composite insulator shape, and on the sides of said polycide gate structure; and

ion implanting a second conductivity imparting dopant into a region of said semiconductor substrate, defined by said insulator spacers, on the sides of said polycide gate structure, to form a heavily doped source and drain region.

2. The method of claim 1, wherein said gate insulator layer is silicon dioxide, thermally grown at a temperature between about 750 to 950°

C., to a thickness between about 60 to 120 Angstroms.

3. The method of claim 1, wherein said polysilicon layer is deposited using LPCVD procedures, to a thickness between about 500 to 2000 Angstroms.

4. The method of claim 1, wherein said metal silicide layer is tungsten silicide, deposited using LPCVD procedures, to a thickness between about 500 to 2000 Angstroms, using silane and tungsten hexafluoride as reactants.

5. The method of claim 1, wherein said composite insulator layer is comprised of an overlying silicon nitride layer, obtained via LPCVD or PECVD procedures, at a thickness between about 800 to 2000 Angstroms, and of an underlying silicon oxide layer, obtained via LPCVD or PECVD procedures, at a thickness between about 200 to 1000 Angstroms.

6. The method of claim 1, wherein said metal silicide shape is formed via an isotropic RIE procedure, at a pressure between about 15 to 25 mTorr, using Cl₂ as an etchant for said metal silicide layer.

7. The method of claim 1, wherein said straight walled polysilicon shape is formed via an anisotropic RIE procedure, at a pressure between about 2 to 4 mTorr, using Cl₂ as an etchant for said polysilicon layer.

8. The method of claim 1, wherein said first oxide layer is a silicon oxide layer, thermally grown on the sides of said metal silicide shape, at a temperature between about 750 to 950°

C., to a thickness between about 150 to 250 Angstroms.

9. The method of claim 1, wherein said second oxide layer is silicon oxide, thermally grown on the sides of said straight walled polysilicon shape, at a temperature between about 750 to 950°

C., to a thickness between about 70 to 120 Angstroms.

10. The method of claim 1, wherein said first conductivity imparting dopant, used to create said lightly doped source and drain regions, is phosphorous or arsenic ions, ion implanted at an energy between about 15 to 30 KeV, at a dose between about 2E13 to 2E14 atoms/cm², and at an implant angle between about 0 to 7 degrees.

11. The method of claim 1, wherein said insulator spacers are silicon nitride, formed via deposition of a silicon nitride layer, using PECVD or LPCVD procedures, to a thickness between about 400 to 1000 Angstroms, followed by an anisotropic RIE procedure, using CHF₃ as an etchant.

12. The method of claim 1, wherein said second conductivity imparting dopant, used to create said heavily doped source and drain regions, is arsenic or phosphorous ions, ion implanted at an energy between about 25 to 40 KeV, at a dose between about 2E15 to 2E16 atoms/cm², and at an implant angle between about 0 to 7 degrees.

13. A method for fabricating a MOSFET device, on a semiconductor substrate, featuring a polycide gate structure comprised of a tungsten silicide shape overlying a polysilicon shape, and with the width of tungsten silicide shape, narrower than the width of said polysilicon shape, comprising the steps of:

forming a silicon dioxide gate insulator layer on said semiconductor substrate;

depositing a polysilicon layer on said silicon dioxide gate insulator layer;

depositing a tungsten silicide layer on said polysilicon layer;

depositing a thin silicon oxide layer on said tungsten silicide layer;

depositing a first silicon nitride layer on said thin silicon oxide layer;

forming a photoresist shape on said first silicon nitride layer;

anisotropic reactive ion etching of said first silicon nitride layer, and of said thin silicon oxide layer, using said photoresist shape as a mask, to create a straight walled composite insulator shape, with said straight walled composite insulator shape having a width equal to the width of said photoresist shape;

forming said polycide gate structure, via isotropic reactive ion etching of said tungsten silicide layer, using said photoresist shape as a mask, to create said tungsten silicide shape, with the width of said tungsten silicide shape narrower than the width of said photoresist shape, and via anisotropic reactive ion etching of said polysilicon layer, using said photoresist shape as a mask, to create a straight walled polysilicon shape, and with the width of said straight walled polysilicon shape equal to the width of said photoresist shape;

thermally growing a first insulator layer on the sides of said tungsten silicide shape, and thermally growing a second insulator layer on the sides of said straight walled polysilicon shape;

ion implanting a first conductivity imparting dopant into a region of said semiconductor substrate, defined by said second insulator layer, on the sides of said straight walled polysilicon shape, to create a lightly doped source and drain region;

depositing a second silicon nitride layer;

anisotropic reactive ion etching of said second silicon nitride layer, to form silicon nitride spacers on the sides of said composite insulator shape, and on the sides of said straight walled polysilicon shape; and

ion implanting a second conductivity imparting an area of said semiconductor substrate, defined by said silicon nitride spacers on the sides of said polycide gate structure, to create a heavily doped source and drain region.

14. The method of claim 13, wherein said polysilicon layer is deposited using LPCVD procedures, to a thickness between about 500 to 2000 Angstroms.

15. The method of claim 13, wherein said tungsten silicide layer is deposited using LPCVD procedures, to a thickness between about 500 to 2000 Angstroms, using silane and tungsten hexafluoride as reactants.

16. The method of claim 13, wherein said tungsten silicide shape, of said polycide gate structure, is formed via an isotropic RIE procedure, at a pressure between about 15 to 25 mTorr, using Cl₂ as an etchant for said tungsten silicide layer.

17. The method of claim 13, wherein said polysilicon shape, of said polycide gate structure, is formed via an anisotropic RIE procedure, at a pressure between about 2 to 4 mTorr, using Cl₂ as an etchant for said polysilicon layer.

18. The method of claim 13, wherein said first insulator layer, is thermally grown on the sides of said tungsten silicide shape, at a temperature between about 750 to 950°

C., to a thickness between about 150 to 250 Angstroms.

19. The method of claim 13, wherein said second insulator layer, on the sides of said polysilicon shape, is a silicon oxide layer, thermally grown at a temperature between about 750 to 950°

C., to a thickness between about 70 to 120 Angstroms.

20. The method of claim 13, wherein said first conductivity imparting dopant, used to create said lightly doped source and drain region, in said semiconductor substrate, is phosphorous or arsenic ions, implanted at an energy between about 15 to 30 KeV, at a dose between about 2E13 to 2E14 atoms/cm², at an implant angle between about 0 to 7 degrees.

21. The method of claim 13, wherein said second conductivity imparting dopant, used to create said heavily doped source and drain regions, in said semiconductor substrate, is phosphorous or arsenic ions, implanted at an energy between about 25 to 40 KeV, at a dose between about 2E15 to 2E16 atoms/cm², at an implant angle between about 0 to 7 degrees.