Compensation of the channel region critical dimension, after polycide gate, lightly doped source and drain oxidation procedure
First Claim
1. A method for fabricating a MOSFET device, on a semiconductor substrate, comprising the steps of:
- forming a gate insulator layer on said semiconductor substrate;
depositing a polysilicon layer;
depositing a metal silicide layer;
depositing a composite insulator layer;
forming a photoresist shape;
anisotropic etching of said composite insulator layer, using said photoresist shape as an etch mask, creating a straight walled composite insulator shape, with the width of said straight walled composite insulator shape equal to the width of said photoresist shape;
forming a polycide gate structure comprised of a metal silicide shape, on a polysilicon shape, via isotropic etching of said metal silicide layer, creating said metal silicide shape, with the width of said metal silicide shape narrower than the width of said photoresist shape, and via an anisotropic etching of said polysilicon layer, using said photoresist shape as a mask, creating a straight walled polysilicon shape, with the width of said straight walled polysilicon shape equal to the width of said photoresist shape;
growing a first oxide layer on the exposed sides of said metal silicide shape;
growing a second oxide layer on the exposed sides of said straight walled polysilicon shape;
ion implanting a first conductivity imparting dopant into a region of said semiconductor substrate, defined by said second oxide layer, on the sides of said straight walled polysilicon shape, to form a lightly doped source and drain region;
forming insulator spacers on the sides of said composite insulator shape, and on the sides of said polycide gate structure; and
ion implanting a second conductivity imparting dopant into a region of said semiconductor substrate, defined by said insulator spacers, on the sides of said polycide gate structure, to form a heavily doped source and drain region.
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Abstract
A process for fabricating a MOSFET device has been developed featuring a polycide gate structure, comprised of a metal silicide component, overlying a polysilicon component, and with the metal silicide shape intentionally fabricated to be narrower than the underlying polysilicon shape. This polycide configuration is obtained using an isotropic RIE procedure for the metal silicide shape, while using an anisotropic RIE procedure for the definition of the polysilicon shape. The undercut metal silicide shape can now accommodate a thermally grown oxide layer, thicker than the thermally grown oxide formed on the underlying, straight walled polysilicon shape, and thus allowing a lightly doped source and drain region, and the subsequent MOSFET channel length, to be defined by the thin oxide, on the sides of the straight walled polysilicon shape.
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Citations
21 Claims
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1. A method for fabricating a MOSFET device, on a semiconductor substrate, comprising the steps of:
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forming a gate insulator layer on said semiconductor substrate; depositing a polysilicon layer; depositing a metal silicide layer; depositing a composite insulator layer; forming a photoresist shape; anisotropic etching of said composite insulator layer, using said photoresist shape as an etch mask, creating a straight walled composite insulator shape, with the width of said straight walled composite insulator shape equal to the width of said photoresist shape; forming a polycide gate structure comprised of a metal silicide shape, on a polysilicon shape, via isotropic etching of said metal silicide layer, creating said metal silicide shape, with the width of said metal silicide shape narrower than the width of said photoresist shape, and via an anisotropic etching of said polysilicon layer, using said photoresist shape as a mask, creating a straight walled polysilicon shape, with the width of said straight walled polysilicon shape equal to the width of said photoresist shape; growing a first oxide layer on the exposed sides of said metal silicide shape; growing a second oxide layer on the exposed sides of said straight walled polysilicon shape; ion implanting a first conductivity imparting dopant into a region of said semiconductor substrate, defined by said second oxide layer, on the sides of said straight walled polysilicon shape, to form a lightly doped source and drain region; forming insulator spacers on the sides of said composite insulator shape, and on the sides of said polycide gate structure; and ion implanting a second conductivity imparting dopant into a region of said semiconductor substrate, defined by said insulator spacers, on the sides of said polycide gate structure, to form a heavily doped source and drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a MOSFET device, on a semiconductor substrate, featuring a polycide gate structure comprised of a tungsten silicide shape overlying a polysilicon shape, and with the width of tungsten silicide shape, narrower than the width of said polysilicon shape, comprising the steps of:
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forming a silicon dioxide gate insulator layer on said semiconductor substrate; depositing a polysilicon layer on said silicon dioxide gate insulator layer; depositing a tungsten silicide layer on said polysilicon layer; depositing a thin silicon oxide layer on said tungsten silicide layer; depositing a first silicon nitride layer on said thin silicon oxide layer; forming a photoresist shape on said first silicon nitride layer; anisotropic reactive ion etching of said first silicon nitride layer, and of said thin silicon oxide layer, using said photoresist shape as a mask, to create a straight walled composite insulator shape, with said straight walled composite insulator shape having a width equal to the width of said photoresist shape; forming said polycide gate structure, via isotropic reactive ion etching of said tungsten silicide layer, using said photoresist shape as a mask, to create said tungsten silicide shape, with the width of said tungsten silicide shape narrower than the width of said photoresist shape, and via anisotropic reactive ion etching of said polysilicon layer, using said photoresist shape as a mask, to create a straight walled polysilicon shape, and with the width of said straight walled polysilicon shape equal to the width of said photoresist shape; thermally growing a first insulator layer on the sides of said tungsten silicide shape, and thermally growing a second insulator layer on the sides of said straight walled polysilicon shape; ion implanting a first conductivity imparting dopant into a region of said semiconductor substrate, defined by said second insulator layer, on the sides of said straight walled polysilicon shape, to create a lightly doped source and drain region; depositing a second silicon nitride layer; anisotropic reactive ion etching of said second silicon nitride layer, to form silicon nitride spacers on the sides of said composite insulator shape, and on the sides of said straight walled polysilicon shape; and ion implanting a second conductivity imparting an area of said semiconductor substrate, defined by said silicon nitride spacers on the sides of said polycide gate structure, to create a heavily doped source and drain region. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21)
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Specification