Silicon oxide insulator (SOI) semiconductor having selectively linked body
First Claim
1. A semiconductor device, comprising:
- at least a first silicon oxide insulator (SOI) transistor and a second SOI transistor, at least the first SOI transistor having a semiconductive body region; and
a semiconductive transition region between the first and second SOI transistors, the transition region having a first conductivity type and communicating with a power supply voltage source, the first conductivity type and the voltage source being selected to selectively isolate the first SOI transistor from the second transistor such that the body region of the first SOI transistor exhibits a floating effect, or to link the body region such that the body region does not exhibit a floating effect.
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Accused Products
Abstract
A silicon oxide insulator (SOI) device includes an SOI layer supported on a silicon substrate. A body region is disposed on the SOI layer, and the body region is characterized by a first conductivity type. Source and drain regions are juxtaposed with the body region, with the source and drain regions being characterized by a second conductivity type. A transition region is disposed near the body region above the SOI layer, and the conductivity type of the transition region is established to be the first conductivity type for suppressing floating body effects in the body region and the second conductivity type for isolating the body region. An ohmic connector contacts the transition region and is connected to a drain power supply when the source and drain are doped with N-type dopants. On the other hand, the power supply is a source power supply when the source and drain are doped with P-type dopants. SOI bipolar transistors, pinch resistors, and diodes, all incorporating transition regions, are also disclosed.
48 Citations
19 Claims
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1. A semiconductor device, comprising:
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at least a first silicon oxide insulator (SOI) transistor and a second SOI transistor, at least the first SOI transistor having a semiconductive body region; and a semiconductive transition region between the first and second SOI transistors, the transition region having a first conductivity type and communicating with a power supply voltage source, the first conductivity type and the voltage source being selected to selectively isolate the first SOI transistor from the second transistor such that the body region of the first SOI transistor exhibits a floating effect, or to link the body region such that the body region does not exhibit a floating effect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 18)
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11. A silicon oxide insulator (SOI) device, comprising:
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at least one SOI layer; at least one silicon substrate supporting the SOI layer; at least one body region on the SOI layer, the body region being characterized by a first conductivity type; at least source and drain regions juxtaposed with the body region, the source and drain regions being characterized by a second conductivity type; and at least one transition region disposed near the body region above the SOI layer, the transition region being characterized by a transition conductivity type, wherein the transition conductivity type is established to be the first conductivity type for suppressing floating body effects in the body region, the transition conductivity type being established to be the second conductivity type for isolating the body region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 19)
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Specification