Conductive address structure for field emission displays

• US 5,994,834 A
• Filed: 08/22/1997
• Issued: 11/30/1999
• Est. Priority Date: 08/22/1997
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Alwan, James J., Tjaden, Kevin
• Primary Examiner(s): DAY, MICHAEL HENRY
• Application Number:
  US08/917,445
• Time in Patent Office: 830 Days
• Field of Search: 313/336, 313/309, 313/351, 313/495, 313/496, 313/497, 313/422, 315/169.1
• US Class Current: 313/497
• CPC Class Codes: H01J 31/127 using large area or array sources, i.e. essentially a source for each pixel group

Abstract

An emitter structure for a field emission display includes: a substrate (100) having a top surface; an address line (142) embedded in the substrate (100) and having an upper surface substantially coplanar with the top surface of the substrate (100); and an emitter site (152) having an emitter (154) superjacent to the top surface of the substrate (100) apart from the address line (142) and having a contact (153) having a first portion coupled to the emitter (142) and a second portion coupled to the address line (142). The substrate (100) may further include a base layer (110), and a dielectric layer (120), and the contact (153) may further act as a resistor to limit the current to the emitter (154).

Claims

1. An emitter structure for a baseplate of a field emission display, comprising:

a substrate having a top surface;

an address line embedded in the substrate, the address line having an upper surface being at least substantially coplanar with the top surface of the substrate; and

an emitter assembly having an emitter superjacent to the top surface of the substrate apart from the address line and a contact having a first portion coupled to the emitter and a second portion coupled to the address line.

2. The device of claim 1 wherein the substrate comprises a semiconductive base layer and the address line is embedded in the base layer.

3. The device of claim 1 wherein the substrate comprises a semiconductive base layer and a dielectric layer over the base layer, and wherein the address line is embedded at least in the dielectric layer.

4. The device of claim 3 wherein the address line is embedded in a trench across at least a portion of the dielectric layer.

5. The device of claim 4, further comprising a plurality of pads projecting upwardly from a bottom surface of the trench and being spaced apart along a longitudinal axis of the trench, and wherein an emitter site with at least one emitter is positioned over each pad and coupled to the address line in the trench.

6. The device of claim 4 wherein a plurality of emitter sites are positioned over the dielectric layer adjacent to a side of the address line, and each emitter site is electronically coupled to the address line.

7. The device of claim 4, further comprising a passivation layer over the address line.

8. The device of claim 7 wherein the passivation layer comprises titanium nitride.

9. The device of claim 7 wherein the passivation layer comprises a copper-titanium alloy.

10. The device of claim 1 wherein:

the substrate has a semiconductive base layer and a dielectric layer covering the base layer;

the dielectric layer has a trench extending across at least a portion of the substrate and a plurality of pads projecting upwardly from a bottom surface of the trench, the pads being spaced apart from one another along a longitudinal axis of the trench;

the address line is embedded in the trench;

a passivation layer is positioned over the address line; and

an emitter set is positioned on each pad, each emitter set having at least one emitter coupled to the address line.

11. An emitter structure for a baseplate of a field emission display, comprising:

a substrate region having a top surface;

a metal address line embedded in the substrate region, the address line having an upper surface at least substantially coplanar with the top surface of the substrate; and

an emitter assembly electrically coupled to the address line, the emitter assembly having an emitter superjacent to the top surface of the substrate apart from the address line and a contact having a first portion coupled to the emitter and a second portion coupled to the address line.

12. The device of claim 11 wherein the substrate comprises a semiconductive base layer and the address line is embedded in the base layer.

13. The device of claim 11 wherein the substrate comprises a semiconductive base layer and a dielectric layer over the base layer, and wherein the address line is embedded at least in the dielectric layer.

14. The device of claim 13 wherein the address line is embedded in a trench across at least a portion of the dielectric layer.

15. The device of claim 14, further comprising a plurality of pads projecting upwardly from a bottom surface of the trench and being spaced apart along a longitudinal axis of the trench, and wherein an emitter site with at least one emitter is positioned over each pad and coupled to the address line in the trench.

16. The device of claim 14, further comprising a passivation layer over the address line.

17. The device of claim 16 wherein the passivation layer comprises titanium nitride.

18. The device of claim 16 wherein the passivation layer comprises a copper-titanium alloy.

19. The device of claim 11 wherein:

the substrate has a semiconductive base layer and a dielectric layer covering the base layer;

the dielectric layer has a trench extending across at least a portion of the substrate and a plurality of pads projecting upwardly from a bottom surface of the trench, the pads being spaced apart from one another along a longitudinal axis of the trench;

the address line is embedded in the trench;

a passivation layer is positioned over the address line; and

an emitter set is positioned on each pad, each emitter set having at least one emitter coupled to the address line.

20. An emitter structure for baseplate of a field emission display, comprising:

a substrate region having a top surface and a trench across at least a portion of the top surface, the trench having a depth at an intermediate level within the substrate;

a conductive line in the trench, the conductive line having an upper surface at least substantially coplanar with the top surface of the substrate; and

an emitter assembly having an emitter superjacent to the top surface of the substrate apart from the address line and a contact having a first portion coupled to the emitter and a second portion coupled to the address line.

21. The device of claim 20 wherein the substrate comprises a semiconductive base layer and the conductive line is embedded in the base layer.

22. The device of claim 20 wherein the substrate comprises a semiconductive base layer and a dielectric layer over the base layer, and wherein the conductive line is embedded at least in the dielectric layer.

23. The device of claim 20, further comprising a plurality of pads projecting upwardly from a bottom surface of the trench and being spaced apart along a longitudinal axis of the trench, and wherein an emitter site with at least one emitter is positioned over each pad and coupled to the conductive line in the trench.

24. The device of claim 20, further comprising a passivation layer over the conductive line.

25. The device of claim 24 wherein the passivation layer comprises titanium nitride.

26. The device of claim 25 wherein the passivation layer comprises a copper-titanium alloy.

27. A conductive address structure in a field emission display, comprising:

a substrate having a top surface;

a conductive line embedded in the substrate along an address line, the conductive line having an upper surface at least substantially coplanar with the top surface of the substrate; and

an emitter assembly having an emitter superjacent to the top surface of the substrate apart from the address line and a contact having a first portion coupled to the emitter and a second portion coupled to the address line.

28. The device of claim 27 wherein the substrate comprises a semiconductive base layer and the conductive line is embedded in the base layer.

29. The device of claim 27 wherein the substrate comprises a semiconductive base layer and a dielectric layer over the base layer, and wherein the conductive line is embedded at least in the dielectric layer.

30. The device of claim 29 wherein the conductive line is embedded in a trench across at least a portion of the dielectric layer.

31. The device of claim 30, further comprising a plurality of pads projecting upwardly from a bottom surface of the trench and being spaced apart along a longitudinal axis of the trench, and wherein an emitter site with at least one emitter is positioned over each pad and coupled to the conductive line.

32. The device of claim 30, further comprising a passivation layer over the conductive line.

33. The device of claim 32 wherein the passivation layer comprises titanium nitride.

34. The device of claim 32 wherein the passivation layer comprises a copper-titanium alloy.

35. The device of claim 27 wherein:

the substrate has a semiconductive base layer and a dielectric layer covering the base layer;

the dielectric layer has a trench extending across at least a portion of the substrate and a plurality of pads projecting upwardly from a bottom surface of the trench, the pads being spaced apart from one another along a longitudinal axis of the trench;

the conductive line is embedded in the trench and extends around portions of the pads;

a passivation layer is positioned over the conductive line; and

an emitter set is positioned on each pad, each emitter set having at least one emitter coupled to the conductive line.

36. A field emission display, comprising:

a baseplate including a substrate having a top surface and an address line embedded in the substrate, the address line having an upper surface at least substantially coplanar with the top surface of the substrate, and the baseplate further including an emitter assembly coupled to the address line, the emitter assembly having an emitter superjacent to the top surface of the substrate apart from the address line and a contact having a first portion coupled to the emitter and a second portion coupled to the address line.

an extraction grid juxtaposed to the baseplate, the extraction grid having an aperture aligned with the emitter; and

a faceplate juxtaposed to the extraction grid, the face plate having an inner surface facing the emitter, a conductive film over the inner surface, and a cathodoluminescent film over the conductive film.

37. The device of claim 36 wherein the baseplate substrate comprises a semiconductive base layer and the address line is embedded in the base layer.

38. The device of claim 36 wherein the baseplate substrate comprises a semiconductive base layer and a dielectric layer over the base layer, and wherein the address line is embedded at least in the dielectric layer.

39. The device of claim 38 wherein the address line is embedded in a trench across at least a portion of the dielectric layer.

40. The device of claim 39, further comprising a plurality of pads projecting upwardly from a bottom surface of the trench and being spaced apart along a longitudinal axis of the trench, and wherein an emitter site with at least one emitter is positioned over each pad and coupled to the address line.

41. The device of claim 39, further comprising a passivation layer over the address line.

42. The device of claim 41 wherein the passivation layer comprises titanium nitride.

43. the device of claim 41 wherin the passivation layer comprises a copper-titanium alloy.

44. The device of claim 36 wherein:

the substrate has a semiconductive base layer and a dielectric layer covering the base layer;

the dielectric layer has a trench extending across at least a portion of the substrate and a plurality of pads projecting upwardly from a bottom surface of the trench, the pads being spaced apart from one another along a longitudinal axis of the trench;

the address line is embedded in the trench and extends around portions of the pads;

a passivation layer is positioned over the address line; and

an emitter set is positioned on each pad, each emitter set having at least one emitter coupled to the address line.

45. An emitter structure for a baseplate of a field emission display, comprising:

a substrate having a top surface;

an address line embedded in the substrate, the address line having an upper surface being at least substantially coplanar with the top surface of the substrate;

an emitter assembly coupled to the address line having an emitter superjacent to the top surface of the substrate apart from the address line and a contact having a first portion coupled to the emitter and a second portion coupled to the address line; and

a drive circuit electrically coupled to the address line, the drive circuit receiving an image signal from an external source to control a voltage at the emitter via the address line.